2MBI1200U4G-170 IGBT Modules IGBT MODULE (U series) 1700V / 1200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Icp 1ms -Ic -Ic pulse 1ms Collector power dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min. Mounting Screw torque (*2) Main Terminals Sense Terminals Tc=25C Tc=80C Tc=25C Tc=80C Maximum ratings 1700 20 1600 1200 3200 2400 1200 2400 6250 150 -40 to +125 3400 5.75 10 2.5 Units V V A W C VAC Nm Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4) Electrical characteristics (at Tj= 25C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage I CES I GES VGE (th) VCE (sat) (main terminal) VCE (sat) (chip) Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead VGE = 0V, VCE = 1700V VCE = 0V, VGE = 20V VCE = 20V, I C = 1200mA Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) Rth(c-f) Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Tj=25C Tj=125C Tj=25C Tj=125C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V I C = 1200A VCC = 900V, I C = 1200A, VGE = 15V, Tj = 125C, Rgon = 4.7, Rgoff = 1.2 VGE = 0V I F = 1200A I F = 1200A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics min. typ. max. 1.0 1600 5.5 6.5 7.5 2.57 2.76 2.97 2.25 2.40 2.65 112 3.10 1.25 1.45 0.25 2.12 2.51 2.32 1.80 2.15 2.00 0.45 0.27 - Units mA nA V V nF s V s m Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics IGBT FWD with Thermal Compound (*4) Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.020 0.033 0.006 - Units C/W 2MBI1200U4G-170 IGBT Modules Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=125C, chip Collector current vs. Collector-Emitter voltage (typ.) Tj=25C, chip 2800 2800 2000 1600 10V 1200 800 400 1.0 2.0 3.0 4.0 2000 1600 10V 1200 800 8V 0 0.0 5.0 1.0 2.0 4.0 5.0 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C, chip VGE=+15V, chip 2800 10 Tj=125C Collector-Emitter voltage : VCE [V] Tj=25C 2400 Collector current : Ic [A] 3.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 2000 1600 1200 800 400 0 0.0 8 6 4 Ic=2400A Ic=1200A Ic=600A 2 0 1.0 2.0 3.0 4.0 5.0 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate-Emitter voltage : VGE [V] Dynamic Gate charge (typ.) Tj=25C Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25C 1000 Collector-Emitter voltage : VCE [V] 1000 Capacitance : Cies, Coes, Cres [nF] 12V 400 8V 0 0.0 VGE=20V 15V 2400 Cies 100 10 Cres Coes 25 VCE 800 VGE 600 15 400 10 200 5 0 1 0 10 20 0 30 1000 2000 3000 Gate charge : Qg [nC] Collector-Emitter voltage : VCE[V] 2 20 4000 0 5000 Gate-Emitter voltage : VGE [V] Collector current : Ic [A] 12V Collector current : Ic [A] VGE=20V 15V 2400 2MBI1200U4G-170 IGBT Modules Switching time vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1200A, VGE=15V, Tj=125C 6.0 ton 3.5 Switching time : ton, tr, toff, tf [us] Switching time : ton, tr, toff, tf [us] Vcc=900V, VGE=15V, Rgon=4.7, Rgoff=1.2, Tj=125C 4.0 3.0 2.5 2.0 tr 1.5 toff 1.0 0.5 tf ton 5.0 4.0 toff 3.0 tr 2.0 1.0 tf 0.0 0.0 0 400 800 1200 1600 2000 0 2 Collector current : Ic [A] Switching loss vs. Collector current (typ.) 8 10 12 14 Vcc=900V, Ic=1200A, VGE=15V, Tj=125C 1100 900 Switching loss : Eon, Eoff, Err [mJ/pulse] 1000 Switching loss : Eon, Eoff, Err [mJ/pulse] 6 Switching loss vs. Gate resistance (typ.) Vcc=900V, VGE=15V, Rgon=4.7, Rgoff=1.2, Tj=125C Eon 800 Eoff 700 600 500 Err 400 300 200 100 0 0 400 800 1200 1600 VGE=15V, Tj=125C/chip 2400 2000 1600 1200 800 400 0 800 1200 1600 800 700 Eoff 600 500 400 300 Err 200 100 2 4 6 8 10 Gate resistance : Rg [] 2800 400 Eon 900 0 Reverse bias safe operating area (max.) 0 1000 0 2000 Collector current : Ic [A], Forward current : IF [A] Collector current : Ic [A] 4 Gate resistance : Rg [] 2000 Collector-Emitter voltage : VCE [V] 3 12 14 2MBI1200U4G-170 IGBT Modules Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=900V, VGE=15V, Rgon=4.7, Tj=125C 1200 Tj=25C Tj=125C Reverse recovery current : Irr [A] Forward current : IF [A] 2400 2000 1600 1200 800 400 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1000 FWD IGBT 0.0100 0.0010 0.010 0.100 1.000 Pulse width : Pw [sec] 4 1.0 0.9 800 0.8 700 0.7 0.6 600 trr 500 0.5 400 0.4 300 0.3 200 0.2 100 0.1 400 800 1200 Forward current : IF [A] Transient thermal resistance (max.) 1.1 900 0 4.0 0.1000 Thermal resistanse : Rth (j-c) [C/W] Irr 0 Forward on voltage : VF [V] 0.0001 0.001 1.2 1100 1600 0.0 2000 Reverse recovery time : trr [us] 2800 2MBI1200U4G-170 IGBT Modules Outline Drawings, mm Equivalent Circuit Schematic main emitter main collector E1 C2 sense emitter E1 C2 sense collector gate G1 G2 gate sense collector C1 E2 sense emitter C1 main collector E2 main emitter 5 2MBI1200U4G-170 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6 http://store.iiic.cc/