VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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Revision: 24-Mar-14 1Document Number: 94632
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ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 95 A
MECHANICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
PRODUCT SUMMARY
IT(AV) or IF(AV) 95 A
Type Modules - Thyristor, Standard
ADD-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) or IF(AV) 85 °C 95
A
IO(RMS) As AC switch 210
ITSM,
IFSM
50 Hz 2000
60 Hz 2094
I2t50 Hz 20 kA2s
60 Hz 18.26
I2t200 kA2s
VRRM Range 400 to 1600 V
TStg -40 to 125 °C
TJ-40 to 125 °C
VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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Revision: 24-Mar-14 2Document Number: 94632
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ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2t x tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x x IAV < I < x IAV
(4) I > x IAV
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM, IDRM
AT 125 °C
mA
VS-VSK.91
04 400 500 400
15
06 600 700 600
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current (thyristors) IT(AV) 180° conduction, half sine wave,
TC = 85 °C 95
A
Maximum average forward current (diodes) IF(AV)
Maximum continuous RMS on-state current,
as AC switch IO(RMS) 210
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
t = 10 ms No voltage
reapplied Sinusoidal
half wave,
initial TJ = TJ maximum
2000
t = 8.3 ms 2094
t = 10 ms 100 % VRRM
reapplied
1682
t = 8.3 ms 1760
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
Initial TJ = TJ maximum
20
kA2s
t = 8.3 ms 18.26
t = 10 ms 100 % VRRM
reapplied
14.14
t = 8.3 ms 12.91
Maximum I2t for fusing I2t (1) t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum 200 kA2s
Maximum value or threshold voltage VT(TO) (2) Low level (3)
TJ = TJ maximum 0.97 V
High level (4) 1.1
Maximum value of on-state
slope resistance rt (2) Low level (3)
TJ = TJ maximum 2.76 m
High level (4) 2.38
Maximum peak on-state or forward voltage VTM ITM = x IT(AV) TJ = 25 °C 1.73 V
VFM IFM = x IF(AV)
Maximum non-repetitive rate of rise of
turned on current dI/dt TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs
Maximum holding current IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit 250 mA
Maximum latching current ILTJ = 25 °C, anode supply = 6 V, resistive load 400
or
I(RMS) I(RMS)
VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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Revision: 24-Mar-14 3Document Number: 94632
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Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 12 W
Maximum average gate power PG(AV) 3.0
Maximum peak gate current IGM 3.0 A
Maximum peak negative gate voltage - VGM 10
V
Maximum gate voltage required to trigger VGT
TJ = -40 °C
Anode supply = 6 V
resistive load
4.0
TJ = 25 °C 2.5
TJ = 125 °C 1.7
Maximum gate current required to trigger IGT
TJ = -40 °C
Anode supply = 6 V
resistive load
270
mATJ = 25 °C 150
TJ = 125 °C 80
Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.25 V
Maximum gate current that will not trigger IGD TJ = 125 °C, rated VDRM applied 6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit 15 mA
Maximum RMS insulation voltage VINS 50 Hz 3000 (1 min)
3600 (1 s) V
Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, linear to 0.67 VDRM 1000 V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating and storage
temperature range TJ, TStg -40 to 125 °C
Maximum internal thermal resistance,
junction to case per leg RthJC DC operation 0.22
°C/W
Typical thermal resistance,
case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.1
Mounting torque ± 10 %
to heatsink A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
4
Nm
busbar 3
Approximate weight 75 g
2.7 oz.
Case style JEDEC®AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.91.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W
VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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Revision: 24-Mar-14 4Document Number: 94632
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Average on-state current (A)
Maximum allowable case temperature (°C)
0 20406080100
70
80
90
100
110
120
130
180°
120°
90°
60°
30°
RthJC (DC) = 0.22°C/W
0 20406080100120140160
70
80
90
100
110
120
130
180°
120°
90°
60°
30°
DC
RthJC (DC) = 0.22°C/W
Average on-state current (A)
Maximum allowable case temperature (°C)
Average on-state current (A)
Maximum average on-state power loss (W)
0 20406080100
0
20
40
60
80
100
120
140
160
180°
120°
90°
60°
30°
RMS limit
Per leg, Tj = 125°C
Average on-state current (A)
Maximum average on-state power loss (W)
0 20406080100120140160
0
20
40
60
80
100
120
140
160
180
200
220
180°
120°
90°
60°
30°
RMS limit
DC
Per leg, Tj = 125°C
Peak half sine wave on-state current (A)
Number of equal amplitude half cycle current pulses (N)
110100
800
1000
1200
1400
1600
1800
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
Per leg
Peak half sine wave on-state current (A)
Pulse train duration (s)
0.01 0.1 1
800
1000
1200
1400
1600
1800
2000
Per leg
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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Revision: 24-Mar-14 5Document Number: 94632
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Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
Total RMS output current (A)
Maximum total on-state power loss (W)
Maximum allowable ambient temperature (°C)
020 40 60 80 100 120 140
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
0 40 80 120 160 200 240
0
50
100
150
200
250
300
350
400
180°
120°
90°
60°
30°
VSK.91 Series
Per module
Tj = 125°C
Total output current (A)
Maximum total power loss (W)
020 40 60 80 100 120 140
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
2 °C/W
Maximum allowable ambient temperature (°C)
050100150200
0
100
200
300
400
500
600
700
180°
(sine)
180°
(rect)
2 x VSK.91 Series
single phase bridge connected
Tj = 125°C
∼
Total output current (A) Maximum allowable ambient temperature (°C)
Maximum total power loss (W)
020 40 60 80 100 120 140
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
0 40 80 120 160 200 240
0
100
200
300
400
500
600
700
800
900
120°
(rect)
3 x VSK.91 Series
three phase bridge connected
Tj = 125°C
VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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Revision: 24-Mar-14 6Document Number: 94632
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Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
Fig. 12 - Gate Characteristics
Instantaneous on-state voltage (V)
Instantaneous on-state current (A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Per leg
Square wave pulse duration (s)
Transient thermal impedance Z
thJC
(°C/W)
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
Per leg
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
TJ = - 4 0 ° C
TJ = 2 5 ° C
TJ = 1 2 5 ° C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Fr e q u e n c y Li m i t e d b y PG ( A V )
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% ra ted d i/ d t: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
IRK.71../ .91.. Series
Instantaneous gate voltage (V)
Instantaneous gate current (A)
VSK.
VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two SCRs doubler circuit T
SCR/diode doubler circuit, positive control H
SCR/diode doubler circuit, negative control L
SCR/diode common anodes N
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95368
2- Module type
3- Circuit configuration (see Circuit Configuration table)
4- Current code (95 A)
5- Voltage code (see Voltage Ratings table)
Device code
KT91/16
21 43 5
1- Vishay Semiconductors product
VS-VS
+
-
K1
(5)
K2
(7)
G2
(6)
G1
(4)
~
(1)
(2)
(3)
VSKT 1
2
3
4 5 7 6
+
-
K1
(5)
G1
(4)
~
(1)
(2)
(3)
VSKH 1
2
3
4 5
+
-
K2
(7)
G2
(6)
~
(1)
(2)
(3)
VSKL 1
2
3
7 6
+
+
K1
(5)
G1
(4)
-
(1)
(2)
(3)
VSKN 1
2
3
4 5
Document Number: 95368 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 11-Nov-08 1
ADD-A-PAK Generation VII - Thyristor
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
35 REF.
30 ± 0.5
(1.18 ± 0.020)
29 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
18 (0.7) REF.
15.5 ± 0.5
(0.6 ± 0.020)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
6.7 ± 0.3 (0.26 ± 0.012)
30 ± 1 (1.18 ± 0.039)
24 ± 0.5
(1 ± 0.020)
1
2
3
4 5 7 6
80 ± 0.3 (3.15 ± 0.012)
92 ± 0.75 (3.6 ± 0.030)
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
15 ± 0.5 (0.59 ± 0.020)
22.6 ± 0.2
(0.89 ± 0.008)
6.3 ± 0.2 (0.248 ± 0.008)
5.8 ± 0.25 (0.228 ± 0.010)
4 ± 0.2 (0.157 ± 0.008)
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