AUIRF4905S AUIRF4905L AUTOMOTIVE GRADE Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET -55V VDSS RDS(on) max. 20m ID (Silicon Limited) -70A ID (Package Limited) -42A D D S S D G TO-262 AUIRF4905L G Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF4905L TO-262 AUIRF4905S D2-Pak D2Pak AUIRF4905S G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRF4905L AUIRF4905S AUIRF4905STRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) -70 ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) -44 -42 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation -280 170 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount, steady state) Units A W 1.3 20 140 790 See Fig.15,16, 12a, 12b W/C V mJ A mJ -55 to + 150 C 300 Typ. Max. Units --- 0.75 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-13 AUIRF4905S/L Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -55 --- --- V VGS = 0V, ID = -250A --- -0.054 --- V/C Reference to 25C, ID = -1mA --- --- 20 m VGS = -10V, ID = -42A -2.0 --- -4.0 V VDS = VGS, ID = -250A 19 --- --- S VDS = -25V, ID = -42A --- --- -25 VDS = -55V, VGS = 0V A --- --- -250 VDS = -44V,VGS = 0V,TJ =125C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 120 32 53 20 99 51 64 180 --- --- --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Input Capacitance Output Capacitance --- --- 3500 1250 --- --- Crss Coss Coss Coss eff. Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- 450 4620 940 1530 --- --- --- --- Min. Typ. Max. Units --- --- -42 --- --- -280 --- --- --- --- 61 150 -1.3 92 220 Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = -42A nC VDS = -44V VGS = -10V VDD = -28V ID = -42A ns RG= 2.6 VGS = -10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = -25V = 1.0MHz pF VGS = 0V,VDS = -1.0V = 1.0MHz VGS = 0V,VDS = -44V = 1.0MHz VGS = 0V, VDS = 0V to -44V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -42A,VGS = 0V ns TJ = 25C ,IF = -42A , VDD = -28V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25C, L = 0.16mH, RG = 25, IAS = -42A, VGS =-10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.08mH, RG = 25, IAS = 66A, VGS =10V. This is applied to D2 Pak, When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ of approximately 90C 2 2015-11-13 AUIRF4905S/L 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -4.5V 60s PULSE WIDTH Tj = 25C 1 10 100 BOTTOM 10 -4.5V 60s PULSE WIDTH Tj = 150C 1 1 0.1 100 0.1 1000 10 100 1000 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 40 1000.0 Gfs, Forward Transconductance (S) TJ = 25C -ID , Drain-to-Source Current) 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) TJ = 150C 100.0 10.0 1.0 VDS = -25V TJ = 25C 30 TJ = 150C 20 10 VDS = -10V 380s PULSE WIDTH 60s PULSE WIDTH 0.1 0 3 4 5 6 7 8 9 10 11 12 13 -VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 14 0 20 40 60 80 -ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance vs. Drain Current 2015-11-13 AUIRF4905S/L 7000 -VGS, Gate-to-Source Voltage (V) 6000 Coss = Cds + Cgd 5000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Ciss 4000 3000 Coss 2000 1000 Crss ID= -42A VDS= -28V VDS= -11V 12 8 4 0 0 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 -ID, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 80 120 160 200 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 100.0 TJ = 150C 10.0 TJ = 25C 1.0 40 QG Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS (on) 100 1msec 100sec 10msec LIMITED BY PACKAGE 10 DC Tc = 25C Tj = 150C Single Pulse VGS = 0V 1 0.1 0.0 4 VDS = -44V 16 0.4 0.8 1.2 1.6 2.0 0 1 10 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 100 2015-11-13 AUIRF4905S/L 80 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain Current (A) LIMITED BY PACKAGE 60 40 20 0 ID = -42A VGS = -10V 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 C 3 Ci= iRi Ci= iRi Ri (C/W) i (sec) 0.1165 0.000068 0.3734 0.002347 0.2608 0.014811 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-11-13 AUIRF4905S/L Fig 12a. Unclamped Inductive Test Circuit EAS, Single Pulse Avalanche Energy (mJ) 600 ID -17A -30A BOTTOM -42A TOP 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 13a. Gate Charge Test Circuit -VGS(th) Gate threshold Voltage (V) 3.6 3.2 ID = -250A 2.8 2.4 2.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Waveform 6 2015-11-13 AUIRF4905S/L 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) EAR , Avalanche Energy (mJ) 160 TOP Single Pulse BOTTOM 1% Duty Cycle ID = -42A 120 80 40 PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] 0 25 50 75 100 125 150 EAS (AR) = PD (ave)*tav Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 7 2015-11-13 AUIRF4905S/L Fig 17. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2015-11-13 AUIRF4905S/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF4905S YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-13 AUIRF4905S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF4905L YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-11-13 AUIRF4905S/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2015-11-13 AUIRF4905S/L Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-262 Pak Machine Model Human Body Model ESD MSL1 D2-Pak Charged Device Model RoHS Compliant Class M4 (+/- 425V) AEC-Q101-002 Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 11/13/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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