1MBI400NP-120
1MBI400NN-120 IGBT Module
1200V / 400A 1 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector Continuous IC
current 1ms IC pulse
Continuous -IC
1ms -IC pulse
Max. power dissipation PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage Vis
Screw torque Mounting *1
Terminals *2
Terminals *3
Rating
1200
±20
400
800
400
800
3100
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
1.7
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
– – 4.0
––60
4.5 – 7.5
– – 3.3
– 64000 –
– 23200 –
– 20640 –
– 0.75 1.2
– 0.25 0.6
– 1.05 1.5
– 0.35 0.5
– – 3.0
– – 0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=400mA
VGE=15V, IC=400A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=400A
VGE=±15V
RG=1.8 ohm
IF=400A, VGE=0V
IF=400A
mA
µA
V
V
pF
µs
V
µs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance – – 0.04
– – 0.12
– 0.0125 –
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*1 : Recommendable value : 2.5 to 3.5 N·m(M5) or (M6)
*2 : Recommendable value : 3.5 to 4.5 N·m(M6)
*3 : Recommendable value : 1.3 to 1.7 N·m(M4)
Symbol Characteristics Conditions Unit
Min. Typ. Max.
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
CE
¤
¤ Current control circuit
廃型機種
Discontinued product.
http://store.iiic.cc/
1MBI400NP-120 / 1MBI400NN-120 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=600V, RG=1.8 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current
Vcc=600V, RG=1.8 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
1000
800
600
400
200
0 0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
Collector current : Ic [A] Collector current : Ic [A]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
10
10
8
6
4
2
0
0 200 400 600 800
10
1000
800
600
400
200
0
0 200 400 600 800
廃型機種
Discontinued product.
http://store.iiic.cc/
IGBT Module
Switching time vs. RG
Vcc=600V, Ic=300A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
1 3 5 10 Gate charge : Qg [nC]
100
1000
0
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Collector current : -Ic [A]
(Forward current : IF [A] )
1000
800
600
400
200
0 0 1 2 3 4 5
Gate-Emitter voltage : VGE [V]
Emitter-Collector voltage VECD [V]
(Forward voltage : VF [V])
Reverse recovery current : Irr [A]
Reverse recovery time : trr [n sec.]
Forward current vs. Forward voltage
VGE=0V
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current : IF [A]
100
0 200 400 600 800
4000
3000
2000
1000
00 200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
Switching loss : Eon, Eoff, Err [mJ/cycle]
Switching loss vs. Collector current
Vcc=600V, RG=1.8 ohm, VGE=±15V Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 1.8 ohm
<< >
0 1000 2000 3000 4000 5000
175
150
125
100
75
50
25
0 0 100 200 300 400 500 600 700 800
25
20
15
10
5
0
1MBI400NP-120 / 1MBI400NN-120
1000
800
600
400
200
0
廃型機種
Discontinued product.
http://store.iiic.cc/
IGBT Module
Outline Drawings, mm
0.001
0.001 0.01 0.1 1 Collector-Emitter voltage : VCE [V]
1
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
mass : 370g
0.1
Pulse width : PW [sec.]
Thermal resistance : Rth (j-c) [°C/W]
Transient thermal resistance
0 5 10 15 20 25 30 35
0.01
100
1MBI400NP-120 / 1MBI400NN-120
廃型機種
Discontinued product.
http://store.iiic.cc/
