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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Key Features and Performance
•Frequency Range: 8.5 - 11 GHz
•5dB Nominal Insertion Loss
•2deg RMS Phase Error @ 9.5GHz
•0.2dB RMS Amp. Error @ 9.5GHz
•Negative Control Voltage
•0.5µm MESFET Technology
•Chip dimensions:
3.25 x 3.48 x 0.15 mm
(0.128 x 0.137 x 0.006 inches)
Measured Performance
Primary Applications
•Military Radar
•Transmit / Receive
Description
The TriQuint TGP2103 is a 6-bit digital
phase shifter MMIC design using
TriQuint’s proven 0.5μm MESFET
process. The TGP2103 will support a
variety of X-Band phased array
applications including military radar.
The 6-bit design utilizes a compact
topology that achieves a 11.31mm2die
area and high performance.
The TGP2103 provides a 6-bit digital
phase shift function with a nominal 5dB
insertion loss and 2°RMS phase shift
error over a bandwidth of 8.5-11GHz.
The TGP2103 requires a minimum of off-
chip components and operates with a
-5V control voltage. Each device is RF
tested on-wafer to ensure performance
compliance. The device is available in
chip form.
Lead-Free and RoHS compliant
8.5 - 11 GHz 6-bit Phase Shifter
Datasheet subject to change without notice
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE I
MAXIMUM RATINGS
Symbol Parameter Value Notes
V
C
Control Voltage Range -8V to 0V 1/ 2/
I
C
Control Supply Current 1 mA 1/ 2/
P
IN
Input Continuous Wave Power 20 dBm 1/ 2/
P
D
Power Dissipation 0.1 W 1/ 2/
T
CH
Operating Channel Temperature 200 °C 3/
Mounting Temperature
(30 Seconds)
320 °C
T
STG
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
3/ Junction operating temperature will directly affect the device median time to failure
(Tm). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25°C, Nominal)
(VC = -5V)
Parameter Test
Conditions
Typ Units Notes
Insertion Loss 8.5 – 11GHz 5 dB
Peak Amplitude Error 8.5 – 11GHz 0.5 dB
RMS Amplitude Error 8.5 – 11GHz 0.2 dB
Peak Phase Shift Error 8.5 – 11GHz 3 deg
RMS Phase Shift Error 8.5 – 11GHz 2 deg
Input Return Loss 8.5 – 11GHz 15 dB
Output Return Loss 8.5 – 11GHz 12 dB
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Preliminary Measured Data
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Preliminary Measured Data
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Preliminary Measured Data
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
State Table
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Mechanical Drawing
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Chip Assembly & Bonding Diagram
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TGP2103
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
Assembly Process Notes
TGP2103
