1/18March, 21 2003
PD55008
PD55008S
RF POWER TRANSISTORS
The Ldm oST
Plastic FAM ILY
N-CHANNEL ENHA NCEMENT-MODE LATERA L
MOSFETs
•EXCELLENT THERMAL STABILITY
•COMMON SOURCE CONFIGURATION
•POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V
•NEW RF PLASTIC PAC KAGE
DESCRIPTION
The PD55008 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designe d for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies up
to 1 G H z .
PD55008 boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology mount-
ed in the first true SM D plastic RF power package,
PowerSO-10RF. PD55008’s superior linearity per-
formance m akes it an ideal solution for car mobile
radio.
The PowerSO-10 plastic package, designed t o of-
fer high reliability, i s t he first ST JE DEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assem bly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55008 BRANDING
PD55008
PowerSO-10RF
(straight lead)
ORDER CODE
PD55008S BRANDING
PD55008S
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ± 20 V
IDDrain Current 4 A
PDISS Power Dissipation (@ Tc = 70°C) 52.8 W
Tj Max. Operating Junction Temperature 165 °C
TSTG Storage Temperature -65 to +150 °C
THE RMAL DA TA
Rth(j-c) Junction -Case Thermal Resistance 1.8 °C/W
Mounting reco mmendation s are available in
www.st.com/rf/ (loo k for application note AN 12 94)