34 4AK/Diodes RB705D R B 7 Oo 5 D (B83 A /Under Development) YUAIYLIESAY PIBY ay h-NU PAT AR-k Silicon Epitaxial Schottky Barrier Diode eGR @ 5432341 / Dimensions (Unit : mm) 1) AY-FAELYIL ATT. 2) SrE-MWE, 1.4'95 29+0.2 wis 5 g+0.2 3) STPMECHS,. er @ Features i LT [Hs : aby | VA 2/A Oo~ 0.1 a n 1) Cathode-common twin type S 2) Minimold 03~06 al 4] 3) High reliability 1 37K Li 0.152366 @ Ae HARE AD BRAT YF LIOR Applications For general rectification and high-speed switching @ XR ATHY Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Limits Unit @yRLE-7HEE VRM 25 v ceeE Va 20 vo Tee lo 30 mA LYSE ay 200 mA SES BEE fp Tj - 40 ~+ 125 C - RBene Tstg_ 40 ~+ 125 cc! * 6OHZ* 1% @ SARAH / Electrical Characteristics (Ta = 25C) Parameter Symbol | Min Typ. Max. Unit Conditions PAS HR IR 1 uA | VR=10V SABE 7 ve | | | 037 | Vv. ip=tma eee ; Ct _ 20 ~ pF Vr = 1V, f= 1MHz 1292