1
2MBI225U4N-170-50 IGBT Modules
IGBT MODULE (U series)
1700V / 225A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1700 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=25°C 300
A
Tc=80°C 225
Icp 1ms Tc=25°C 600
Tc=80°C 450
-Ic 225
-Ic pulse 1ms 450
Collector power dissipation Pc 1 device 1040 W
Junction temperature Tj 150 °C
Storage temperature Tstg -40 to +125
Isolation voltage
between terminal and copper base (*1)
Viso AC : 1min. 3400 VAC
between thermistor and others (*2)
Screw torque Mounting (*3) -3.5 N m
Terminals (*4) 4.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2:
Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.
Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 3.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 600 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 225mA 4.5 6.5 8.5 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal) VGE = 15V
IC = 225A
Tj=25°C - 2.60 2.85
V
Tj=125°C - 3.00 -
VCE (sat)
(chip)
Tj=25°C - 2.30 2.45
Tj=125°C - 2.65 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 21 - nF
Turn-on time
ton VCC = 900V
IC = 225A
VGE = ±15V
RG = 2.2Ω
- 0.62 1.20
µs
tr - 0.39 0.60
tr (i) - 0.05 -
Turn-off time toff - 0.55 1.50
tf - 0.09 0.30
Forward on voltage
VF
(terminal) VGE = 0V
IF = 225A
Tj=25°C - 2.05 2.35
V
Tj=125°C - 2.25 -
VF
(chip)
Tj=25°C - 1.80 1.95
Tj=125°C - 2.00 -
Reverse recovery time trr IF = 225A - 0.18 0.6 µs
Lead resistance, terminal-chip (*5) R lead - 1.30 - mΩ
Thermistor
Resistance RT=25°C - 5000 - Ω
T=100°C 465 495 520
B value B T=25/50°C 3305 3375 3450 K
Note *5: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c) IGBT - - 0.12
°C/W
FWD - - 0.20
Contact thermal resistance (1device) (*6) Rth(c-f) with Thermal Compound - 0.0167 -
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
2MBI225U4N-170-50
2
IGBT Modules
Characteristics (Representative)
VGE=0V, f= 1MHz, Tj= 25°C Vcc=900V, Ic=225A, Tj= 25°C
Dynamic Gate charge (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
VGE=15V / chip Tj=25°C / chip
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 125°C/ chip
0
100
200
300
400
500
600
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
VGE=20V 15V 12V
10V
8V
0
100
200
300
400
500
600
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
VGE=20V
15V
12V
10V
8V
0
100
200
300
400
500
600
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5 10 15 20 25
Gate-Emitter voltage : VGE [V]
Collector - Emitter voltage : VCE [ V ]
Ic=450A
Ic=225A
Ic=112.5A
0.1
1.0
10.0
100.0
1000.0
0 10 20 30
Collector-Emitter voltage : VCE [V]
Capacitance : Cies, Coes, Cres [ nF ]
Cies
Coes
Cres
0 200 400 600 800
Gate charge : Qg [nC]
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE [ 5V/div ]
VGE
VCE
3
3
IGBT Modules
2MBI225U4N-170-50
Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C
Stray inductance <= 100nH
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°CVcc=900V, Ic=225A, VGE=±15V, Tj= 125°C
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
Reverse bias safe operating area (max.)Switching loss vs. Gate resistance (typ.)
10
100
1000
10000
0 100 200 300 400
Collector current : Ic [A]
Switching time : ton, tr, toff, tf [ nsec ]
ton
toff
tr
tf
10
100
1000
10000
0 100 200 300 400
Collector current : Ic [A]
Switching time : ton, tr, toff, tf [ nsec ]
ton
tr
tf
toff
10
100
1000
10000
0.1 1.0 10.0 100.0
Gate resistance : RG [Ω]
Switching time : ton, tr, toff, tf [ nsec ]
tr
tf
ton
toff
0
25
50
75
100
125
0 50 100 150 200 250 300 350 400 450
Collector current : Ic [A]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
50
100
150
200
250
0.1 1.0 10.0 100.0
Gate resistance : RG [Ω]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eoff
Err
Eon
0
100
200
300
400
500
600
0 500 1000 1500
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
4
2MBI225U4N-170-50
4
IGBT Modules
Transient thermal resistance　(max.)
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
Forward current vs. Forward on voltage (typ.)
chip
Temperature characteristic (typ.)
[ Thermistor ]
0
100
200
300
400
500
600
0 1 2 3 4
Forward on voltage : VF [V]
Forward current : IF [A]
Tj=25°C
10
100
1000
0 100 200 300 400
Forward current : IF [A]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001
0.010
0.100
1.000
0.001 0.010 0.100 1.000
Pulse width : Pw [sec]
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD
IGBT
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
0.1
1.0
10.0
100.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [ oC ]
Resistance : R [ kΩ]
5
5
IGBT Modules
2MBI225U4N-170-50
Equivalent Circuit Schematic
OUT
N P
Outline Drawings, mm
N (1)
G1
C P (2)
E1
G2
E2
OUT (3,4)
T1
T2
[ Thermistor ]
6
2MBI225U4N-170-50 IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
http://store.iiic.cc/