SDP10S30 SDT10S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode * Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM * Switching behavior benchmark * No reverse recovery Qc 23 nC * No temperature influence on IF 10 A the switching behavior PG-TO220-2-2. P-TO220 * No forward recovery Type Package Ordering Code Marking Pin 1 Pin 2 Pin 3 SDP10S30 P-TO220-3 Q67040-S4372 D10S30 n.c. C A SDT10S30 PG-TO220-2-2. Q67040-S4447 D10S30 C A Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Value Continuous forward current, TC=100C IF 10 RMS forward current, f=50Hz IFRMS 14 Surge non repetitive forward current, sine halfwave IFSM Unit A 36 TC=25C, tp=10ms IFRM 45 IFMAX 100 i 2t value, TC=25C, tp=10ms i2dt 6.5 As Repetitive peak reverse voltage VRRM 300 V Surge peak reverse voltage VRSM 300 Power dissipation, TC=25C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 C Repetitive peak forward current Tj=150C, TC=100C, D=0.1 Non repetitive peak forward current tp=10s, TC=25C Rev. 1.5 Page 1 2008-06-02 SDP10S30 SDT10S30 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 2.3 Characteristics Thermal resistance, junction - case RthJC K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=10A, Tj=25C - 1.5 1.7 IF=10A, Tj=150C - 1.5 1.9 Reverse current A IR V R=300V, T j=25C - 15 200 V R=300V, T j=150C - 20 1000 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.5 Page 2 2008-06-02 SDP10S30 SDT10S30 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qc - 23 - nC t rr - n.a. - ns AC Characteristics Total capacitive charge 1) V R=200V, IF=10A, diF /dt=-200A/s, Tj =150C Switching time2) V R=200V, IF=10A, diF /dt=-200A/s, Tj =150C Total capacitance pF C V R=0V, T C=25C, f=1MHz - 600 - V R=150V, T C=25C, f=1MHz - 55 - V R=300V, T C=25C, f=1MHz - 40 - Rev. 1.5 Page 3 2008-06-02 SDP10S30 SDT10S30 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF= f (TC) parameter: Tj175 C 11 70 W A 60 9 50 8 45 7 IF Ptot 55 40 6 35 5 30 25 4 20 3 15 2 10 1 5 0 0 20 40 60 80 100 120 140 0 0 C 180 TC 20 40 60 80 100 120 140 C 180 TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF) average forward current parameter: Tj , tp = 350 s PF(AV)=f(IF) TC=100C, d = tp/T 20 32 A W 16 PF(AV) 24 IF 14 12 10 20 d=1 d=0.5 d=0.2 d=0.1 16 -40C 25C 100C 125C 150C 8 6 12 8 4 4 2 0 0.6 Rev. 1.5 0.8 1 1.2 1.4 1.6 1.8 2.2 V VF Page 4 0 0 2 4 6 8 10 12 14 18 A IF(AV) 2008-06-02 SDP10S30 SDT10S30 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance I R=f(VR) ZthJC = f (t p) parameter : D = t p/T 10 1 2 10 A SDP10S30 K/W 10 1 ZthJC 10 0 IR 10 0 10 -1 10 -1 10 D = 0.50 10 150C 125C 100C 25C -2 0.20 0.10 0.05 10 10 -3 10 -4 50 -2 -3 single pulse 0.02 0.01 100 150 V 200 10 -4 -7 10 300 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VR 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(V R) EC=f(V R) parameter: TC = 25 C, f = 1 MHz 2.5 450 pF J 350 C EC 300 1.5 250 200 1 150 100 0.5 50 0 0 10 Rev. 1.5 10 1 10 2 3 10 V VR Page 5 0 0 50 100 150 200 V 300 VR 2008-06-02 SDP10S30 SDT10S30 9 Typ. capacitive charge vs. current slope Q c=f(diF/dt) parameter: Tj = 150 C 22 nC 18 IF*2 IF IF *0.5 Qc 16 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/s 1000 diF /dt Rev. 1.5 Page 6 2008-06-02 SDP10S30 SDT10S30 P-TO220-3-1, P-TO220-3-21 Rev. 1.5 Page 7 2008-06-02 SDP10S30 SDT10S30 PG-TO-220-2-2 Rev. 1.5 Page 8 2008-06-02 SDP10S30 SDT10S30 Rev. 1.5 Page 9 2008-06-02