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08/22/06
DIGITAL AUDIO MOSFET
IRFI4020H-117P
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 300W per channel into
8Ω load in half-bridge configuration
amplifier
Lead-free package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
V
DS
200
V
R
DS(ON)
typ. @ 10V
80
m
:
Q
g
typ.
19
Q
sw
typ.
6.8
R
G(int)
typ.
3.0
Ω
T
J
max
150
°C
Key Parameters
g
Absolute Maximum Ratings
g
Parameter Units
VDS Drain-to- Source Voltage V
V
GS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
IDM
Pulsed Drai n Current
c
P
D
@T
C
= 25°C
Power Dissipation
f
W
PD @TC = 100°C
Power Dissipation
f
Linear Derating Factor W/°C
EAS
Single Pulse Avalanche Energy
d
mJ
T
J Operating Juncti on and °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
( 1 .6 m m fro m case)
Mounting torque, 6-32 or M3 screw
Therm al Resistance
g
Parameter Typ. Max. Units
RθJC
Junction-to-Case
f
––– 5.9 °C/W
R
θJA Junction-to-Ambient (f ree air) ––– 65
Max.
5.7
36
±20
200
9.1
21
8.5
0.17
10lb
x
in (1.1N
x
m)
-55 to + 150
300
130
TO-220 Full-Pak 5 PIN
G1, G2 D1, D2 S1 , S2
Gate Drain Source
S2
G2
S1/D2
G1
D1
PD - 97252
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IRFI4020H-117P
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 8.6mH, RG = 25Ω, IAS = 5.5A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
Specifications refer to single MosFET.
Electrical Ch aracteristics @ TJ = 25°C (u nless otherwise speci f ied)
g
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V
∆Β
V
DSS
/
∆
T
J Breakdown Voltage Temp. Coefficient ––– 24 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 80 100
m
Ω
V
GS(th) Gate Threshold Vol tage 3.0 ––– 4.9 V
∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -12 ––– mV/°C
I
DSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS Gate-to-Source Forwar d Leakage ––– ––– 100 nA
Gate-to-Source Revers e Leakage ––– ––– -100
g
fs Forward Transconductance 11 ––– ––– S
QgTotal Gate Charge ––– 19 29
Q
gs1 Pre-Vth Gate- to-Source Charge ––– 4.9 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.95 ––– nC
Q
gd Gate-t o-Dr ain Charge ––– 5.8 –––
Qgodr Gate Charge Overdrive ––– 7.4 ––– See Fig. 6 and 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 6.8 –––
RG(int) Internal Gate Resistance ––– 3.0 ––– Ω
t
d(on) Turn-On Delay Time ––– 8.4 –––
trRise Time ––– 8.0 –––
t
d(off) Turn-Off Delay Time ––– 18 ––– ns
tfFall Time ––– 4.0 –––
C
iss Input Capacitance ––– 1240 –––
Coss Output Capacitance ––– 130 ––– pF
C
rss Reverse Transfer Capacitance ––– 28 –––
Coss eff. Effective Output Capacitance ––– 110 –––
L
DInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0. 25in.)
L
SInternal Source Inductance ––– 7.5 ––– from package
Diode Characteristic s
g
P a r a m e ter Min. Ty p. Ma x . Unit s
I
S
@ T
C
= 25°C
Continuous Source Current ––– ––– 9.1
(Body Diode) A
I
SM Pulsed Source Current ––– ––– 36
(Body Diode)
c
V
SD Diode Forwar d Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 76 110 ns
Q
rr Reverse Recovery Charge ––– 230 350 nC
MOSFET symbol
RG = 2.4Ω
TJ = 25°C, IF = 5.5A, VDD = 160V
di/dt = 100A/µs
e
TJ = 25°C, IS = 5.5A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 5.5A
e
VDS = VGS, ID = 100µA
VDS = 200V, VGS = 0V
VGS = 0V, V DS = 0V to 160V
VDS = 200V, VGS = 0V , TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
ID = 5.5A
VGS = 0V
VDS = 50V, ID = 5.5A
Conditions
and center of die contact
VDD = 100V, VGS = 10V
e
VDS = 100V
VDS = 25V
ID = 5.5A
ƒ = 1.0MHz, See Fig.5
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IRFI4020H-117P
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
VDS, D rain-to-Source Volt age (V)
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
≤60µs PULSE WIDTH
Tj = 25° C
6.0V
0.1 110 100
VDS, D rain-to-Source Volt age (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
6.0V
≤60µs PULSE WIDTH
Tj = 150° C
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
3 4 5 6 7
VGS, Gat e-to-S ource Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25° C
TJ = 150° C
VDS = 50V
≤60µs PULSE WIDTH
110 100 1000
VDS, Dr ain-to-Source V oltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
-60 -40 -20 020 40 60 80 100120140160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 5. 5A
VGS = 10V
0 5 10 15 20 25
QG, Tot al Gate C harge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 160V
VDS= 100V
VDS= 40V
ID= 5.5A
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IRFI4020H-117P
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Junction Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
Fig 10. Threshold Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-D rain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25° C
TJ = 150° C
VGS = 0V
25 50 75 100 125 150
TJ , Junction Temperature (°C )
0
2
4
6
8
10
ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
1.108 0.001041
2.172 0.148518
2.621 2.010100
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( ° C )
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th), Gate Threshold Voltage (V)
ID = 100µA
1 10 100 1000
VDS, Dr ain-to-Source V oltage (V)
0.0001
0.001
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 150° C
Single Pulse
100µsec
1msec
10msec
DC
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IRFI4020H-117P
Fig 13a. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 13c. Unclamped Inductive Waveforms
Fig 13b. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms
VGS
VDS
9
0%
10%
td(on) td(off)
trtf
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
VDD
VDS
LD
D.U.T
+
-
Fig 15a. Gate Charge Test Circuit Fig 15b Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
1K
VC
C
DUT
0
L
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C )
0
100
200
300
400
500
600
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 0.91A
1.1A
BOTTOM5.5A
5678910
VGS, Gate - to -Source Voltage (V)
50
75
100
125
150
175
200
225
250
275
300
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 5. 5A
TJ = 25° C
TJ = 125° C
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IRFI4020H-117P
TO-220 Full-Pak 5-Pin Part Marking Information
Data and specifications subject to change without notice.
This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2006
TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))
14
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/