2SK3516-01L,S,SJ FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 450 10 40 30 10 155.3 20 5 1.67 135 +150 Operating and storage -55 to +150 temperature range *1 L=2.85mH, Vcc=45V, See to Avalanche Energy Graph *2 Tch < =150C *3 IF< = BVDSS, Tch < = 150C *4 VDS < = -ID, -di/dt=50A/s, Vcc < = 450V Unit V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=30V VDS=0V ID=4A VGS=10V Typ. 450 3.0 5.0 25 250 100 0.65 Tch=25C Tch=125C ID=4A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V 4 RGS=10 VCC =225V ID=8A VGS=10V L=2.85mH Tch=25C IF=8A VGS=0V Tch=25C IF=8A VGS=0V -di/dt=100A/s Tch=25C Max. 10 0.50 8 800 1200 120 150 4.5 7 15 23 12 18 25 38 7 11 22 33 9.5 14.5 6.5 10 10 1.00 0.7 3.5 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.926 75.0 Units C/W C/W 1 2SK3516-01L,S,SJ FUJI POWER MOSFET Characteristics 150 Allowable Power Dissipation PD=f(Tc) 450 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V IAS=4A 400 125 350 100 300 EAS [mJ] PD [W] IAS=6A 75 50 250 200 IAS=10A 150 100 25 50 0 0 0 25 50 75 100 125 150 0 25 50 Tc [C] 75 100 125 150 starting Tch [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 30 28 26 24 10 20V 10V 22 20 ID [A] ID[A] 8V 18 16 14 1 7.5V 12 10 8 7.0V 6 4 VGS=6.5V 0.1 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 100 2.0 1.8 7.5V VGS=6.5V 7.0V 1.6 8V 1.4 gfs [S] RDS(on) [ ] 10 10V 1.2 20V 1.0 0.8 1 0.6 0.4 0.2 0.1 0.0 0.1 1 10 0 ID [A] 5 10 15 20 25 ID [A] http://store.iiic.cc/ 2 2SK3516-01L,S,SJ 2.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 max. 5.0 VGS(th) [V] RDS(on) [ ] 1.5 1.0 max. 4.5 4.0 3.5 min. 3.0 2.5 typ. 2.0 0.5 1.5 1.0 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 150 -50 Tch [ C] 0 25 50 75 100 125 150 Tch [C] Typical Gate Charge Characteristics 24 -25 VGS=f(Qg):ID=8A, Tch=25C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 22 20 Vcc= 90V 18 16 Ciss 1n 225V 360V C [F] VGS [V] 14 12 100p Coss 10 8 6 10p Crss 4 2 0 1p 0 10 20 30 40 50 60 10 -1 10 0 Qg [nC] 100 10 1 10 2 10 3 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C t=f(ID):Vcc=300V, VGS=10V, RG=10 10 2 tr 10 t [ns] IF [A] td(off) td(on) 10 tf 1 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 2.00 VSD [V] 10 0 10 1 ID [A] http://store.iiic.cc/ 3 Zth(ch-c) [C/W] 2SK3516-01L,S,SJ 10 1 10 0 10 -1 10 -2 10 -3 FUJI POWER MOSFET Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 2 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=45V Avalanche Current I AV [A] 10 Single Pulse 1 10 0 10 -1 10 -2 10 -8 10 -7 10 10 -6 10 -5 -4 10 -3 -2 10 10 tAV [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4