Unit
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Dimensions in inches and (millimeter)
CDBM220-HF Thru CDBM2100-HF
Page 1
QW-JB003
SMD Schottky Barrier Rectifiers
REV:A
Comchip Technology CO., LTD.
Mini SMA/SOD-123
0.154(3.9)
0.138(3.5) 0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.067(1.7)
0.051(1.3)
0.035(0.9) Typ.0.035(0.9) Typ.
CDBM CDBM
260-HF
CDBM
280-HF
14
20
30
21
30
60
42
60
50
0.5
10
85
160
80
56
80
230-HF
Features
Mechanical data
Molded plastic, JEDEC MiniSMA/SOD-123.
-Weight:0.027 gram(approx.).
-Batch process design, excellent powe
dissipation offers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-Tiny plastic SMD package.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
-Case:
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
Parameter Symbol
CDBM
220-HF
20
CDBM
2100-HF
100
70
100
CDBM
28
40
50
35
50
250-HF
CDBM
240-HF
40
Repetitive peak reverse voltage
Maximum RMS voltage
Continuous reverse voltage
Maximum forward voltage @IF=2.0A
Forward rectified current
VRRM
VRMS
VR
VF
IO
0.700.50 0.85
2.0
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Typ. thermal resistance, junction to ambient air
Typ. diode junction capacitance (Note 1)
Operating junction temperature
Storage temperature
IFSM
IR
RθJA
CJ
TJ
TSTG
Reverse current on VR=VRRM @TA=25OC
@TA=125OC
Note 1: f=1MHz and applied 4V DC reverse voltage.
-55 to +125 -55 to +150
-65 to +175
V
V
V
V
A
A
mA
pF
OC
OC
OC/W
Maximum Ratings (at TA=25°C unless otherwise noted)
Halogen free
Page 2
QW-JB003
REV:A
Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
Rating and Characteristic Curves ( )CDBM220-HF Thru CDBM2100-HF
Fig.2 Typical Forward Characteristics -
0.01
IF, Instantaneous Forward Current (A)
VF, Forward Voltage (V)
0.1
Fig.1 - Typical Forward Current
Derating Curve
IO, Averaged Forward Current (A)
O
TA, Ambient Temperature ( C)
0 100
Fig.3 Maximum Non-repetitive Peak -
Forward Surge Current
Number of Cycles at 60Hz
0
2.0
1.5
100
2.3
15050 200
1.0
0
IFSM, Peak Forward Surge Current (A)
50
1100
30
10
10
0.3 0.5 0.7 1.30.9 1.1
0.1
1
10
O
TJ=25 C
Pulse width 300μs
1% duty cycle
-
20
40
O
TJ=25 C
8.3ms single half
sine wave, JEDEC
method
Fig.4 Typical Junction Capacitance -
VR, Reverse Voltage (V)
0
CJ, Junction Capacitance (pF)
700
.01 100
400
1
100
300
600
0.1 10
200
500
Fig.5 Typical Reverse Characteristics -
Percent of Rated Peak Reverse Voltage (%)
.01
IR, Reverse Current (mA)
100
0140
60
.1
1
10
20 40 12080 100
O
TJ=25 C
O
TJ=75 C
CDBM250-HF~CDBM260-HF
CDBM220-HF~CDBM240-HF
CDBM250-HF~CDBM2100-HF
CDBM220-HF~CDBM240-HF
CDBM280-HF~CDBM2100-HF
