1 Fm1 Fm
1kW
1.5kW
1.5kW
2kW
Disconnect after Detection
+
Battery Pack
VBUS
GND
D+
D-
USB Port
DC+
GND
Adaptor
VDD
D-
D+
GND
TTDM
Host
System Load
OR
ISET/100/500mA
1
2
3
4
5
10
9
8
7
6
IN
ISET
VSS
PRETERM
PG NC
ISET2
CHG
TS
OUT
bq2409x
+
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
1A, Single-Input, Single Cell Li-Ion and Li-Pol Battery Charger
Check for Samples: bq24090,bq24091,bq24092,bq24093
1FEATURES APPLICATIONS
CHARGING Smart Phones
1% Charge Voltage Accuracy PDAs
10% Charge Current Accuracy MP3 Players
Pin Selectable USB 100mA and 500mA Low-Power Handheld Devices
Maximum Input Current Limit DESCRIPTION
Programmable Termination and Precharge The bq2409x series of devices are highly integrated
Threshold Li-ion and Li-Pol linear chargers devices targeted at
PROTECTION space-limited portable applications. The devices
6.6V Over-Voltage Protection operate from either a USB port or AC adapter. The
high input voltage range with input overvoltage
Input Voltage Dynamic Power Management protection supports low-cost unregulated adapters.
125°C Thermal Regulation; 150°C Thermal
Shutdown Protection The bq2409x has a single power output that charges
the battery. A system load can be placed in parallel
OUT Short-Circuit Protection and ISET with the battery as long as the average system load
Short Detection does not keep the battery from charging fully during
Operation Over JEITA Range via Battery the 10 hour safety timer.
NTC ½ Fast-Charge-Current at Cold, The battery is charged in three phases: conditioning,
4.06V at Hot, bq24092/3 constant current and constant voltage. In all charge
Fixed 10 Hour Safety Timer phases, an internal control loop monitors the IC
SYSTEM junction temperature and reduces the charge current
if an internal temperature threshold is exceeded.
Automatic Termination and Timer Disable
Mode (TTDM) for Absent Battery Pack With
Thermistor
Status Indication Charging/Done
Available in Small 10-Pin MSOP Package
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright © 2010–2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION CONTINUED
The charger power stage and charge current sense functions are fully integrated. The charger function has high
accuracy current and voltage regulation loops, charge status display, and charge termination. The pre-charge
current and termination current threshold are programmed via an external resistor. The fast charge current value
is also programmable via an external resistor.
ORDERING INFORMATION
PART # VO(REG) VOVP JEITA TS/CE PG PACKAGE Marking
bq24090 4.20 V 6.6 V No 10kNTC Yes 10 PIN 5x3mm2bq24090
bq24091 4.20 V 6.6 V No 100kNTC Yes 10 PIN 5x3mm2bq24091
bq24092 4.20 V 6.6 V Yes 10kNTC Yes 10 PIN 5x3mm2bq24092
bq24093 4.20 V 6.6 V Yes 100kNTC Yes 10 PIN 5x3mm2bq24093
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted) VALUE UNIT
IN (with respect to VSS) –0.3 to 7 V
OUT (with respect to VSS) –0.3 to 7 V
Input Voltage PRE-TERM, ISET, ISET2, TS, CHG, PG, ASI, ASO (with respect to –0.3 to 7 V
VSS)
Input Current IN 1.25 A
Output Current (Continuous) OUT 1.25 A
Output Sink Current CHG 15 mA
TJJunction temperature –40 to 150 °C
TSTG Storage temperature –65 to 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
PACKAGE DISSIPATION RATINGS(1) (2)
PACKAGE RθJA RθJC TA25°C DERATING FACTOR
POWER RATING TA> 25°C
5x3mm MSOP 52°C/W 48°C/W 1.92 W 19.2 mW/°C
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
(2) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a copper pad on the board. This is
connected to the ground plane by a 2×3 via matrix
2Copyright © 2010–2012, Texas Instruments Incorporated
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
RECOMMENDED OPERATING CONDITIONS(1)
MIN MAX UNIT
IN voltage range 3.5 7 V
VIN IN operating voltage range, Restricted by VDPM and VOVP 4.45 6.45 V
IIN Input current, IN pin 1.0 A
IOUT Current, OUT pin 1.0 A
TJJunction temperature 0 125 °C
RPRE-TERM Programs precharge and termination current thresholds 1 10 k
RISET Fast-charge current programming resistor 0.675 49.9 k
RTS 10k NTC thermistor range without entering BAT_EN or TTDM 1.66 258 k
(1) Operation with VIN less than 4.5V or in drop-out may result in reduced performance.
ELECTRICAL CHARACTERISTICS
Over junction temperature range 0°C TJ125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
UVLO Undervoltage lock-out Exit VIN: 0V 4V Update based on sim/char 3.15 3.3 3.45 V
VIN: 4V0V,
VHYS_UVLO Hysteresis on VUVLO_RISE falling 175 227 280 mV
VUVLO_FALL = VUVLO_RISE –VHYS-UVLO
(Input power good if VIN > VOUT + VIN-DT);
Input power good detection threshold
VIN-DT 30 80 145 mV
is VOUT + VIN-DT VOUT = 3.6V, VIN: 3.5V 4V
VHYS-INDT Hysteresis on VIN-DT falling VOUT = 3.6V, VIN: 4V 3.5V 31 mV
Time measured from VIN: 0V 5V 1μs rise-time to
tDGL(PG_PWR) Deglitch time on exiting sleep. 45 μs
PG = low, VOUT = 3.6V
tDGL(PG_NO- Deglitch time on VHYS-INDT power Time measured from VIN: 5V 3.2V 1μs fall-time to 29 ms
PWR) down. Same as entering sleep. PG = OC, VOUT = 3.6V
VOVP Input over-voltage protection threshold VIN: 5V 7V 6.5 6.65 6.8 V
tDGL(OVP-SET) Input over-voltage blanking time VIN: 5V 7V 113 μs
VHYS-OVP Hysteresis on OVP VIN: 7V 5V 95 mV
Time measured from VIN: 7V 5V 1μs fall-time to
tDGL(OVP-REC) Deglitch time exiting OVP 30 μs
PG = LO
Feature active in USB mode; Limit Input Source 4.34 4.4 4.46
Current to 50mA; VOUT = 3.5V; RISET = 825
USB/Adaptor low input voltage
VIN-DPM V
protection. Restricts lout at VIN-DPM Feature active in Adaptor mode; Limit Input Source 4.24 4.3 4.36
Current to 50mA; VOUT = 3.5V; RISET = 825
USB input I-Limit 100mA ISET2 = Float; RISET = 82585 92 100
IIN-USB-CL mA
USB input I-Limit 500mA ISET2 = High; RISET = 825430 462 500
ISET SHORT CIRCUIT TEST
Highest Resistor value considered a Riset: 600 250, IOUT latches off. Cycle power to
RISET_SHORT 280 500
fault (short). Monitored for Iout>90mA Reset.
Deglitch time transition from ISET
tDGL_SHORT Clear fault by cycling IN or TS/BAT_EN 1 ms
short to Iout disable
VIN = 5V, VOUT = 3.6V, VISET2 = Low, RISET:
Maximum OUT current limit Regulation
IOUT_CL 1.05 1.4 A
(Clamp) 600 250, Iout latches off after tDGL-SHORT
BATTERY SHORT PROTECTION
OUT pin short-circuit detection
VOUT(SC) VOUT:3V 0.5V, no deglitch 0.75 0.8 0.85 V
threshold/ precharge threshold
Recovery VOUT(SC) + VOUT(SC-HYS); Rising, no
VOUT(SC-HYS) OUT pin Short hysteresis 77 mV
Deglitch
Source current to OUT pin during
IOUT(SC) 10 15 20 mA
short-circuit detection
Copyright © 2010–2012, Texas Instruments Incorporated 3
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Over junction temperature range 0°C TJ125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
QUIESCENT CURRENT
IOUT(PDWN) Battery current into OUT pin VIN = 0V 1 μA
IOUT(DONE) OUT pin current, charging terminated VIN = 6V, VOUT > VOUT(REG) 6
IIN(STDBY) Standby current into IN pin TS = LO, VIN 6V 125 μA
TS = open, VIN = 6V, TTDM no load on OUT pin,
ICC Active supply current, IN pin 0.8 1.0 mA
VOUT > VOUT(REG), IC enabled
BATTERY CHARGER FAST-CHARGE
VOUT(REG) Battery regulation voltage VIN = 5.5V, IOUT = 25mA, (VTS-45°CVTS VTS-0°C) 4.16 4.2 4.23 V
Battery hot regulation Voltage,
VO_HT(REG) VIN = 5.5V, IOUT = 25mA, VTS-60°CVTS VTS-45°C 4.02 4.06 4.1 V
bq24092/3
VOUT(REG) > VOUT > VLOWV; VIN = 5V, ISET2=Lo,
Programmed Output “fast charge”
IOUT(RANGE) 10 1000 mA
current range RISET = 675 to 10.8k
Adjust VIN down until IOUT = 0.5A, VOUT = 4.15V,
VDO(IN-OUT) Drop-Out, VIN VOUT 325 520 mV
RISET = 675 , ISET2=Lo (adaptor mode); TJ100°C
IOUT Output “fast charge” formula VOUT(REG) > VOUT > VLOWV; VIN = 5V, ISET2 = Lo KISET/RISET A
RISET = KISET /IOUT; 50 < IOUT < 800 mA 510 540 565
KISET Fast charge current factor RISET = KISET /IOUT; 25 < IOUT < 50 mA 480 527 580 A
RISET = KISET /IOUT; 10 < IOUT < 25 mA 350 520 680
PRECHARGE SET BY PRETERM PIN
Pre-charge to fast-charge transition
VLOWV 2.4 2.5 2.6 V
threshold
Deglitch time on pre-charge to fast-
tDGL1(LOWV) 70 μs
charge transition
Deglitch time on fast-charge to pre-
tDGL2(LOWV) 32 ms
charge transition
IPRE-TERM Refer to the Termination Section
VOUT < VLOWV; RISET = 1080; %IOUT-
Pre-charge current, default setting 18 20 22
RPRE-TERM= High Z CC
%PRECHG Pre-charge current formula RPRE-TERM = KPRE-CHG (/%) × %PRE-CHG (%) RPRE-TERM/KPRE-CHG%
VOUT < VLOWV, VIN = 5V, RPRE-TERM = 2k to 10k;
RISET = 1080, RPRE-TERM = KPRE-CHG × %IFAST-CHG, 90 100 110 /%
where %IFAST-CHG is 20 to 100%
KPRE-CHG % Pre-charge Factor VOUT < VLOWV, VIN = 5V, RPRE-TERM = 1k to 2k; RISET
= 1080, RPRE-TERM = KPRE-CHG × %IFAST-CHG, where 84 100 117 /%
%IFAST-CHG is 10% to 20%
TERMINATION SET BY PRE-TERM PIN
Termination Threshold Current, default VOUT > VRCH; RISET = 1k; %IOUT-
9 10 11
setting RPRE-TERM= High Z CC
%TERM Termination Current Threshold RPRE-TERM = KTERM (/%) × %TERM (%) RPRE-TERM/ KTERM
Formula
VOUT > VRCH, VIN = 5V, RPRE-TERM = 2k to 10k;
RISET = 750KTERM × %IFAST-CHG, where %IFAST-CHG 182 200 216
is 10 to 50%
KTERM % Term Factor /%
VOUT > VRCH, VIN = 5V, RPRE-TERM = 1k to 2k; RISET 174 199 224
= 750KTERM × %Iset, where %Iset is 5 to 10%
Current for programming the term. and
IPRE-TERM pre-chg with resistor. ITerm-Start is the RPRE-TERM = 2k, VOUT = 4.15V 71 75 81 μA
initial PRE-TERM current.
%TERM Termination current formula RTERM/ KTERM %
tDGL(TERM) Deglitch time, termination detected 29 ms
Elevated PRE-TERM current for, tTerm-
ITerm-Start Start, during start of charge to prevent 80 85 92 μA
recharge of full battery,
Elevated termination threshold initially
tTerm-Start 1.25 min
active for tTerm-Start
4Copyright © 2010–2012, Texas Instruments Incorporated
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
ELECTRICAL CHARACTERISTICS (continued)
Over junction temperature range 0°C TJ125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RECHARGE OR REFRESH
Recharge detection threshold VO(REG) VO(REG)-
VIN = 5V, VTS = 0.5V, VOUT: 4.25V VRCH VO(REG)-0.095 V
Normal Temp -0.120 0.070
VRCH Recharge detection threshold Hot VO(REG) VO(REG)-
VIN = 5V, VTS = 0.2V, VOUT: 4.15V VRCH VO(REG)-0.105 V
Temp -0.130 0.080
Deglitch time, recharge threshold VIN = 5V, VTS = 0.5V, VOUT: 4.25V 3.5V in 1μs;
tDGL1(RCH) 29 ms
detected tDGL(RCH) is time to ISET ramp
Deglitch time, recharge threshold VIN = 5V, VTS = 0.5V, VOUT = 3.5V inserted; tDGL(RCH)
tDGL2(RCH) 3.6 ms
detected in OUT-Detect Mode is time to ISET ramp
BATTERY DETECT ROUTINE
VOUT Reduced regulation during VO(REG) VO(REG)-
VREG-BD VO(REG)-0.400 V
battery detect -0.450 350
IBD-SINK Sink current during VREG-BD VIN = 5V, VTS = 0.5V, Battery Absent 7 10 mA
tDGL(HI/LOW Regulation time at VREG or VREG-BD 25 ms
REG) VO(REG) VO(REG)-
VBD-HI High battery detection threshold VIN = 5V, VTS = 0.5V, Battery Absent VO(REG)-0.100 V
-0.150 0.050
VREG-BD VREG-BD
VBD-LO Low battery detection threshold VIN = 5V, VTS = 0.5V, Battery Absent VREG-BD +0.1 V
+0.50 +0.15
BATTERY CHARGING TIMERS AND FAULT TIMERS
Restarts when entering Pre-charge; Always enabled
tPRECHG Pre-charge safety timer value 1700 1940 2250 s
when in pre-charge.
Clears fault or resets at UVLO, TS/BAT_EN disable,
tMAXCH Charge safety timer value 34000 38800 45000 s
OUT Short, exiting LOWV and Refresh
BATTERY-PACK NTC MONITOR (Note 1); TS pin: 10k and 100k NTC
INTC-10k NTC bias current, bq24090/2 VTS = 0.3V 48 50 52 μA
INTC-100k NTC bias current, bq24091/3 VTS = 0.3V 4.8 5.0 5.2 μA
10k NTC bias current when Charging
INTC-DIS-10k VTS = 0V 27 30 34 μA
is disabled, bq24090/2
10k NTC bias current when Charging
INTC-DIS-100k VTS = 0V 4.4 5.0 5.8 μA
is disabled, bq24091/3
INTC is reduced prior to entering
INTC-FLDBK-10k TTDM to keep cold thermistor from VTS: Set to 1.525V 4 5 6.5 μA
entering TTDM, bq24090/2
INTC is reduced prior to entering
INTC-FLDBK-100k TTDM to keep cold thermistor from VTS: Set to 1.525V 1.1 1.5 1.9 μA
entering TTDM, bq24091/3
Termination and timer disable mode
VTTDM(TS) VTS: 0.5V 1.7V; Timer Held in Reset 1550 1600 1650 mV
Threshold Enter
VHYS-TTDM(TS) Hysteresis exiting TTDM VTS: 1.7V 0.5V; Timer Enabled 100 mV
VCLAMP(TS) TS maximum voltage clamp VTS = Open (Float) 1800 1950 2000 mV
Deglitch exit TTDM between states 57 ms
tDGL(TTDM) Deglitch enter TTDM between states 8 μs
INTC adjustment (90 to 10%; 45 to 6.6uS) takes
TS voltage where INTC is reduce to
VTS_I-FLDBK place near this spec threshold. VTS: 1.425V 1475 mV
keep thermistor from entering TTDM 1.525V
CTS Optional Capacitance ESD 0.22 μF
Low Temp Charging to Pending;
VTS-0°C Low temperature CHG Pending 1205 1230 1255 mV
VTS: 1.0V 1.5V
Charge pending to low temp charging;
VHYS-0°C Hysteresis at 0°C 86 mV
VTS: 1.5V 1V
Low temperature, half charge, Normal charging to low temp charging;
VTS-10°C 765 790 815 mV
bq24092/3 VTS: 0.5V 1V
Low temp charging to normal CHG;
VHYS-10°C Hysteresis at 10°C, bq24092/3 35 mV
VTS: 1.0V 0.5V
Normal charging to high temp CHG;
VTS-45°C High temperature at 4.1V 263 278 293 mV
VTS: 0.5V 0.2V
High temp charging to normal CHG;
VHYS-45°C Hysteresis at 45°C 10.7 mV
VTS: 0.2V 0.5V
Copyright © 2010–2012, Texas Instruments Incorporated 5
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Over junction temperature range 0°C TJ125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
High temp charge to pending;
VTS-60°C High temperature Disable, bq24092/3 170 178 186 mV
VTS: 0.2V 0.1V
Charge pending to high temp CHG;
VHYS-60°C Hysteresis at 60°C, bq24092/3 11.5 mV
VTS: 0.1V 0.2V
Normal to Cold Operation; VTS: 0.6V 1V 50
Deglitch for TS thresholds: 10C,
tDGL(TS_10C) ms
bq24092/3 Cold to Normal Operation; VTS: 1V 0.6V 12
tDGL(TS) Deglitch for TS thresholds: 0/45/60C. Battery charging 30 ms
VTS-EN-10k Charge Enable Threshold, (10k NTC) VTS: 0V 0.175V; 80 88 96 mV
HYS below VTS-EN-10k to Disable, (10k
VTS-DIS_HYS-10k VTS: 0.125V 0V; 12 mV
NTC)
VTS-EN-100k Charge Enable Threshold, bq24090/2 VTS: 0V 0.175V; 140 150 160 mV
VTS-DIS_HYS- HYS below VTS-EN-100k to Disable, VTS: 0.125V 0V; 50 mV
100k bq24091/3
THERMAL REGULATION
TJ(REG) Temperature regulation limit 125 °C
TJ(OFF) Thermal shutdown temperature 155 °C
TJ(OFF-HYS) Thermal shutdown hysteresis 20 °C
LOGIC LEVELS ON ISET2
VIL Logic LOW input voltage Sink 8 μA 0.4 V
VIH Logic HIGH input voltage Source 8 μA 1.4 V
IIL Sink current required for LO VISET2= 0.4V 2 9 μA
IIH Source current required for HI VISET2= 1.4V 1.1 8 μA
VFLT ISET2 Float Voltage 575 900 1225 mV
LOGIC LEVELS ON CHG AND PG
VOL Output LOW voltage ISINK = 5 mA 0.4 V
ILEAK Leakage current into IC V CHG = 5V, V PG = 5V 1 μA
6Copyright © 2010–2012, Texas Instruments Incorporated
1
2
3
4
5
10
9
8
7
6
IN
ISET
VSS
PRETERM
PG NC
ISET2
CHG
TS
OUT
bq2409x
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
PIN CONFIGURATION
PIN FUNCTIONS
NAME PIN I/O DESCRIPTION
Input power, connected to external DC supply (AC adapter or USB port). Expected range of bypass
IN 1 I capacitors 1μF to 10μF, connect from IN to VSS.
Battery Connection. System Load may be connected. Average load should not be excessive, allowing
OUT 10 O battery to charge within the 10 hour safety timer window. Expected range of bypass capacitors 1μF to
10μF.
Programs the Current Termination Threshold (5 to 50% of Iout which is set by ISET) and Sets the Pre-
PRE-TERM 4 I Charge Current to twice the Termination Current Level.
Expected range of programming resistor is 1k to 10k(2k: Ipgm/10 for term; Ipgm/5 for precharge)
Programs the Fast-charge current setting. External resistor from ISET to VSS defines fast charge current
ISET 2 I value. Range is 10.8k (50mA) to 675 (800mA).
Programming the Input/Output Current Limit for the USB or Adaptor source:
ISET2 7 I High = 500mAmax, Low = ISET, FLOAT = 100mA max.
Temperature sense pin connected to bq24090/2 -10k at 25°C NTC thermistor & bq24091/3 -100k at
25°C NTC thermistor, in the battery pack. Floating TS Pin or pulling High puts part in TTDM “Charger”
TS 9 I Mode and disable TS monitoring, Timers and Termination. Pulling pin Low disables the IC. If NTC
sensing is not needed, connect this pin to VSS through an external 10 k/100kresistor. A 250kfrom
TS to ground will prevent IC entering TTDM mode when battery with thermistor is removed.
VSS 3 Ground terminal
CHG 8 O Low (FET on) indicates charging and Open Drain (FET off) indicates no Charging or Charge complete.
PG 5 O Low (FET on) indicates the input voltage is above UVLO and the OUT (battery) voltage.
NC 6 NA Do not make a connection to this pin (for internal use) Do not route through this pin
There is an internal electrical connection between the exposed thermal pad and the VSS pin of the
Thermal PAD Pad device. The thermal pad must be connected to the same potential as the VSS pin on the printed circuit
and Package 5x3mm2board. Do not use the thermal pad as the primary ground input for the device. VSS pin must be
connected to ground at all times
Copyright © 2010–2012, Texas Instruments Incorporated 7
BatteryPack
VBUS
GND
D+
D-
USBPort
DC+
GND
Adaptor
VDD
D-
D+
GND
Host
SystemLoad
OR
ISET/100/500 mA
1
2
3
4
5
10
9
8
7
6
IN
ISET
VSS
PRETERM
PG NC
ISET2
CHG
TS
OUT
bq2409x
1 Fm1 Fm
1kW
1.5kW
1.5kW
2kW
DisconnectafterDetection
+
TTDM
+
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
Typical Application Circuit: bq2409x
IOUT_FAST_CHG = 540mA; IOUT_PRE_CHG = 108mA; IOUT_TERM = 54mA
8Copyright © 2010–2012, Texas Instruments Incorporated
OUT
Charge
Pump
IN OUT
OUTREGREF
TJ°C
125°CREF
IN
IN
ISET
Charge
Pump
PRE-TERM
75mA+
CHARGE
CONTROL
OUT
VTERM_EN
ISET2 (LO=ISET,HI=USB500,
FLOAT =USB100)
VCOLD-FLT
VHOT-45 C
o
VTTDM
VCE
TS
5 Am45 Am
VCLAMP = 1.4V
ColdTemperature
SinkCurrent
=45 Am
LO =TTDMMODE
HI=CHIP DISABLE
OUT
CHG
ON:
OnDuring
1stChargeOnly
OFF:
+Increasedfrom 75 A to85 A form m
1st minuteofcharge.
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
InternalCharge
CurrentSense
w/ MultipleOutputs
+
_
USBSense
Resistor
USB100/500REF
+
_
1.5V
FASTCHARGE
PRE-CHARGE
PG
HI =SuspendCHG
VCOLD-10 C
o
VHOT-FLT
+
_
+
_
HI =HalfCHG(JEITA)
HI =4.06Vreg(JEITA)
VDISABLE
+
_
+
-80 mV Input
Power
Detect
+
_
IN-DPMREF
0.9VFloat
TS - bq24090
+
_
Disable
SinkCurrent
=20 Am
Bq24090 isasshown
X2Gain(1:2)
Term:Pre-CHGX2
TermReference
Pre-CHGReference
I x1.5V
540 A
OUT
W
T C
J
o
+
_
150 C
ThermalShutdown
o
REF
IN
+
_
OVPREF
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
FUNCTIONAL BLOCK DIAGRAM
Copyright © 2010–2012, Texas Instruments Incorporated 9
Vin
Viset
Vchg
Vpg
t-time-20ms/div
2V/div
2V/div
5V/div
2V/div
Vin
Viset
Vchg
Vpg
t-time-100ms/div
2V/div
2V/div
2V/div
5V/div
Vts
Viset
Vchg
Vpg
t-time-50ms/div
2V/div
2V/div
2V/div
500mV/div
Vin
Vchg
Vpg
Vout
BatteryDetectMode
t-time-20ms/div
2V/div
5V/div
5V/div
2V/div
Vin
Viset
Vts
Vout
t-time-5ms/div
2V/div
2V/div
1V/div
500mV/div
Viset
Vchg
Vts
Vout 1BatteryDetectCycle
Entered TTDM
t-time-10ms/div
5V/div
1V/div
1V/div
1V/div
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
TYPICAL OPERATIONAL CHARACTERISTICS
SETUP: bq2409x typical applications schematic; VIN = 5V, VBAT = 3.6V (unless otherwise indicated)
POWER UP, DOWN, OVP, DISABLE AND ENABLE WAVEFORMS
Figure 1. OVP 8V Adaptor - Hot Plug Figure 2. OVP from Normal Power-up
Operation VIN 0V 5V 6.8V 5V
10kresistor from TS to GND. 10kis shorted to disable the IC.
Fixed 10kresistor, between TS and GND.
Figure 3. TS Enable and Disable Figure 4. Hot Plug Source w/No Battery Battery
Detection
Figure 5. Battery Removal GND Removed 1st, 42 Load Figure 6. Battery Removal with OUT and
TS Disconnect 1st, With 100 Load
Continuous battery detection when not in TTDM.
10 Copyright © 2010–2012, Texas Instruments Incorporated
Viset
Vchg
V_0.1 _OUTW
Vout
BatteryDeclared Absent
t-time-20ms/div
100mV/div
1V/div
1V/div
5V/div
Viset
Vchg
Vout
V_0.1 _OUTW
Battery
Threshold
Reached
t-time-500ms/div
1V/div
5V/div
1V/div
100mV/div
Viset
Vchg
Vout
V_0.1 _OUTW
I ClampedCurrent
OUT
I ShortDetected
andLatchedOff
SET
t-time-200 s/divm
1V/div
2V/div
500mV/div
100mV/div
Vin
Viset
Vchg
V_0.1 _OUTW
t-time-1ms/div
2V/div
2V/div
20mV/div
500mV/div
Vin
Viset
Vchg
V_0.1 _OUTW
ShortDetectedin100mA
modeandLatchedOff
t-time-5ms/div
2V/div
2V/div
500mV/div
20mV/div
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
TYPICAL OPERATIONAL CHARACTERISTICS (continued)
SETUP: bq2409x typical applications schematic; VIN = 5V, VBAT = 3.6V (unless otherwise indicated)
Figure 7. Battery Removal with fixed TS = 0.5V
PROTECTION CIRCUITS WAVEFORMS
CH4: Iout (1A/Div)
Battery voltage swept from 0V to 4.25V to 3.9V.
CH4: Iout (1A/Div)
Figure 8. Battery Charge Profile Figure 9. ISET Shorted During Normal Operation
CH4: Iout (0.2A/Div)
CH4: Iout (0.2A/Div)
Figure 10. ISET Shorted Prior to USB Power-up Figure 11. DPM Adaptor Current Limits Vin Regulated
The IC temperature rises to 125°C and enters thermal regulation. Charge current is reduced to regulate the IC at
125°C. VIN is reduced, the IC temperature drops, the charge current returns to the programmed value.
Copyright © 2010–2012, Texas Instruments Incorporated 11
Vin
Viset
Vchg
V_0.1 _OUTW
t-time-500 s/divm
2V/div
2V/div
500mV/div
20mV/div
Viset
Vout Vin
V_0.1 _OUTW
Exits
Thermal
Regulation
Enters
Thermal
Regulation
t-time-1s/div
2V/div
1V/div
1V/div
50mV/div
Vin
Viset
Vchg
Vpg
t-time-20ms/div
5V/div
5V/div
1V/div
1V/div
4.196
4.198
4.2
4.202
4.204
4.206
4.208
4.21
4.212
4.5 5 5.5 6 6.5
R 100
OUT = Ω
V @25°C
O
V @85°C
O
V -InputVoltageDC-V
I
V -OutputVoltageDC-V
OUT
V @0°C
O
4.192
4.193
4.194
4.195
4.196
4.197
4.198
4.199
4.2
0 0.2 0.4 0.6 0.8 1
I -Outputcurrent- A
O
V @0°C
reg
V -OutputVoltage-V
OUT
V @25°C
reg
V @85°C
reg
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
TYPICAL OPERATIONAL CHARACTERISTICS (continued)
SETUP: bq2409x typical applications schematic; VIN = 5V, VBAT = 3.6V (unless otherwise indicated)
Figure 12. DPM USB Current Limits Vin Regulated to Figure 13. Thermal Reg. Vin increases PWR/Iout
4.4V Reduced
VIN swept from 5V to 3.9V to 5V, VBAT = 4V
Figure 14. Entering and Exiting Sleep Mode Figure 15. KISET for Low and High Currents
Figure 16. Line Regulation Figure 17. Load Regulation Over Temperature
12 Copyright © 2010–2012, Texas Instruments Incorporated
361.8
362
362.2
362.4
362.6
362.8
363
363.2
363.4
2.5 3 3.5 4 4.5
V -OutputVoltage-V
O
I @0°C
O
I @85°C
O
I @25°C
O
I -OutputCurrent-mA
O
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
TYPICAL OPERATIONAL CHARACTERISTICS (continued)
SETUP: bq2409x typical applications schematic; VIN = 5V, VBAT = 3.6V (unless otherwise indicated)
Figure 18. Current Regulation Over Temperature
FUNCTIONAL GENERAL DESCRIPTION
The bq2409x is a highly integrated family of 5x3mm2single cell Li-Ion and Li-Pol chargers. The charger can be
used to charge a battery, power a system or both. The charger has three phases of charging: Pre-charge to
recover a fully discharged battery, fast-charge constant current to supply the buck charge safely and voltage
regulation to safely reach full capacity. The charger is very flexible, allowing programming of the fast-charge
current and Pre-charge/Termination Current. This charger is designed to work with a USB connection or Adaptor
(DC out). The charger also checks to see if a battery is present.
The charger also comes with a full set of safety features: JEITA Temperature Standard, Over-Voltage Protection,
DPM-IN, Safety Timers, and ISET short protection. All of these features and more are described in detail below.
The charger is designed for a single power path from the input to the output to charge a single cell Li-Ion or Li-
Pol battery pack. Upon application of a 5VDC power source the ISET and OUT short checks are performed to
assure a proper charge cycle.
If the battery voltage is below the LOWV threshold, the battery is considered discharged and a preconditioning
cycle begins. The amount of precharge current can be programmed using the PRE-TERM pin which programs a
percent of fast charge current (10 to 100%) as the precharge current. This feature is useful when the system load
is connected across the battery “stealing” the battery current. The precharge current can be set higher to account
for the system loading while allowing the battery to be properly conditioned. The PRE-TERM pin is a dual
function pin which sets the precharge current level and the termination threshold level. The termination "current
threshold" is always half of the precharge programmed current level.
Once the battery voltage has charged to the VLOWV threshold, fast charge is initiated and the fast charge current
is applied. The fast charge constant current is programmed using the ISET pin. The constant current provides the
bulk of the charge. Power dissipation in the IC is greatest in fast charge with a lower battery voltage. If the IC
reaches 125°C the IC enters thermal regulation, slows the timer clock by half and reduce the charge current as
needed to keep the temperature from rising any further. Figure 19 shows the charging profile with thermal
regulation. Typically under normal operating conditions, the IC’s junction temperature is less than 125°C and
thermal regulation is not entered.
Once the cell has charged to the regulation voltage the voltage loop takes control and holds the battery at the
regulation voltage until the current tapers to the termination threshold. The termination can be disabled if desired.
The CHG pin is low (LED on) during the first charge cycle only and turns off once the termination threshold is
reached, regardless if termination, for charge current, is enabled or disabled.
Further details are mentioned in the Operating Modes section.
Copyright © 2010–2012, Texas Instruments Incorporated 13
PRE-CHARGE
CURRENT AND
TERMINATION
THRESHOLD
FAST-CHARGE
CURRENT
T(PRECHG)
Charge
Complete
Status,
Charger
Off
Pre-
Conditioning
Phase
Current
Regulation
Phase
VoltageRegulationand
ChargeTermination
Phase
Battery
Voltage,
V(OUT)
BatteryCurrent,
I(OUT)
DONE
0A
Thermal
Regulation
Phase
Temperature, Tj
IO(OUT)
T(THREG)
I(TERM)
IO(PRECHG)
VO(REG)
VO(LOWV)
DONE
T(CHG)
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
FUNCTIONAL GENERAL DESCRIPTION (continued)
Figure 19. Charging Profile With Thermal Regulation
14 Copyright © 2010–2012, Texas Instruments Incorporated
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
DETAILED FUNCTIONAL DESCRIPTION
Power-Down or Undervoltage Lockout (UVLO)
The bq2409x family is in power down mode if the IN pin voltage is less than UVLO. The part is considered
“dead” and all the pins are high impedance. Once the IN voltage rises above the UVLO threshold the IC will
enter Sleep Mode or Active mode depending on the OUT pin (battery) voltage.
Under Voltage Lockout (UVLO):
The bq2409x family is in power down mode if the IN pin voltage is less than VUVLO. The part is considered “dead”
and all the pins are high impedance.
Power-up
The IC is alive after the IN voltage ramps above UVLO (see sleep mode), resets all logic and timers, and starts
to perform many of the continuous monitoring routines. Typically the input voltage quickly rises through the
UVLO and sleep states where the IC declares power good, starts the qualification charge at 100mA, sets the
input current limit threshold base on the ISET2 pin, starts the safety timer and enables the CHG pin. See
Figure 20.
Sleep Mode
If the IN pin voltage is between than VOUT+VDT and UVLO, the charge current is disabled, the safety timer
counting stops (not reset) and the PG and CHG pins are high impedance. As the input voltage rises and the
charger exits sleep mode, the PG pin goes low, the safety timer continues to count, charge is enabled and the
CHG pin returns to its previous state. See Figure 21
New Charge Cycle
A new charge cycle is started when a good power source is applied, performing a chip disable/enable (TS pin),
exiting Termination and Timer Disable Mode (TTDM), detecting a battery insertion or the OUT voltage dropping
below the VRCH threshold. The CHG pin is active low only during the first charge cycle, therefore exiting TTDM or
a dropping below VRCH will not turn on the CHG pin FET, if the CHG pin is already high impedance.
Copyright © 2010–2012, Texas Instruments Incorporated 15
LDO
VSS
1.8V
0V
LDOHYS
0°C
0°CHYS
10°C
10°CHYS
45°C
45°CHYS
60°C
60°CHYS
EN
DISHYS
tDGL(TS)
tDGL(TS)
tDGL(TS)
tDGL(TS)
tDGL(TS_IOC)
Rising
tDGL(TS_IOC)
Falling
tDGL(TS)
tDGL(TS)
tDGL(TTDM)
Exit
tDGL(TTDM)
Enter
t<tDGL(TTDM)
Exit
t<tDGL(IS)
Normal
Operation
LDO
Mode
Normal
Operation
Cold
Operation Cold
Fault
LDO
Mode
Cold
Fault
Normal
Operation
tDGL(TS)
tDGL(TTDM)
Enter
Disabled Cold
Operation
HOT
Fault
4.06V
HOT
Operation
Normal
Operation
4.06V
HOT
Operation
Disabled
tDGL(TS1_IOC)
ColdtoNormal
DrawingNottoScale
DotsShow Threshold TripPoints
fllowedbyadeglitchtimebefore
transitioningintoanewmode.
t
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
Figure 20. TS Battery Temperature Bias Threshold and Deglitch Timers
16 Copyright © 2010–2012, Texas Instruments Incorporated
ApplyInput
Power
SetInputCurrentLimitto 100 mA
andStartCharge
PerformISET & OUT shorttests
RememberISET2 State
Setchargecurrent
basedonISET2 truth
table.
Returnto
Charge
Ispowergood?
VBAT+VDT < VIN < VOVP
& VUVLO < VIN
No
Yes
Ischipenabled?
VTS > VEN
No
Yes
TurnonPGFET
PGpinLOW
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
Figure 21. bq2409x Power-Up Flow Diagram
Overvoltage-Protection (OVP) Continuously Monitored
If the input source applies an overvoltage, the pass FET, if previously on, turns off after a deglitch, tBLK(OVP). The
timer ends and the CHG and PG pin goes to a high impedance state. Once the overvoltage returns to a normal
voltage, the PG pin goes low, timer continues, charge continues and the CHG pin goes low after a 25ms
deglitch. PG pin is optional on some packages
Copyright © 2010–2012, Texas Instruments Incorporated 17
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
Power Good Indication (PG)
After application of a 5V source, the input voltage rises above the UVLO and sleep thresholds (VIN>VBAT+VDT),
but is less than OVP (VIN<VOVP,), then the PG FET turns on and provides a low impedance path to ground. See
Figure 1,Figure 2, and Figure 14.
CHG Pin Indication
The charge pin has an internal open drain FET which is on (pulls down to VSS) during the first charge only
(independent of TTDM) and is turned off once the battery reaches voltage regulation and the charge current
tapers to the termination threshold set by the PRE-TERM resistor.
The charge pin is high impedance in sleep mode and OVP (if PG is high impedance) and return to its previous
state once the condition is removed.
Cycling input power, pulling the TS pin low and releasing or entering pre-charge mode causes the CHG pin to go
reset (go low if power is good and a discharged battery is attached) and is considered the start of a first charge.
CHG and PG LED Pull-up Source
For host monitoring, a pull-up resistor is used between the "STATUS" pin and the VCC of the host and for a visual
indication a resistor in series with an LED is connected between the "STATUS" pin and a power source. If the
CHG or PG source is capable of exceeding 7V, a 6.2V Zener should be used to clamp the voltage. If the source
is the OUT pin, note that as the battery changes voltage, the brightness of the LEDs vary.
Charging State CHG FET/LED
1st Charge ON
Refresh Charge
OVP OFF
SLEEP
TEMP FAULT ON for 1st Charge
VIN Power Good State PG FET/LED
UVLO
SLEEP Mode OFF
OVP Mode
Normal Input (VOUT + VDT < VIN <ON
VOUP)
PG is independent of chip disable
IN-DPM (VIN-DPM or IN–DPM)
The IN-DPM feature is used to detect an input source voltage that is folding back (voltage dropping), reaching its
current limit due to excessive load. When the input voltage drops to the VIN-DPM threshold the internal pass FET
starts to reduce the current until there is no further drop in voltage at the input. This would prevent a source with
voltage less than VIN-DPM to power the out pin. This works well with current limited adaptors and USB ports as
long as the nominal voltage is above 4.3V and 4.4V respectively. This is an added safety feature that helps
protect the source from excessive loads.
OUT
The Charger’s OUT pin provides current to the battery and to the system, if present. This IC can be used to
charge the battery plus power the system, charge just the battery or just power the system (TTDM) assuming the
loads do not exceed the available current. The OUT pin is a current limited source and is inherently protected
against shorts. If the system load ever exceeds the output programmed current threshold, the output will be
discharged unless there is sufficient capacitance or a charged battery present to supplement the excessive load.
18 Copyright © 2010–2012, Texas Instruments Incorporated
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.6 1.8
V -Voltage-V
TS
NormalizedOUTCurrentandV -V
REG
60 Cto45 C
HOT TEMP
4.06V
Regulation
o o
IOUT
VOUT
00.2 0.4 0.8 11.2 1.4 1.6
For<45 C,4.2VRegulation
o
}HotFault
NoOperation
DuringCold
Fault
Cold
Fault
ICDisable}
0 C
o
< 48 C
o
60 C
o10 C
o
100%ofProgrammed
Current
50%
Termination
Disable
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
ISET
An external resistor is used to Program the Output Current (50 to 800mA) and can be used as a current monitor.
RISET = KISET ÷ IOUT (1) (1)
Where:
IOUT is the desired fast charge current;
KISET is a gain factor found in the electrical specification
For greater accuracy at lower currents, part of the sense FET is disabled to give better resolution. Figure 15
shows the transition from low current to higher current. Going from higher currents to low currents, there is
hysteresis and the transition occurs around 0.15A.
The ISET resistor is short protected and will detect a resistance lower than 340. The detection requires at
least 80mA of output current. If a “short” is detected, then the IC will latch off and can only be reset by cycling the
power. The OUT current is internally clamped to a maximum current between 1.1A and 1.35A and is independent
of the ISET short detection circuitry, as shown in Figure 23. Also, see Figure 9 and Figure 10.
Figure 22. Operation Over TS Bias Voltage
Copyright © 2010–2012, Texas Instruments Incorporated 19
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
100 1000 10000
I -
SET W
I -OutputCurrent- A
O
I InternalClampRange
OUT
I Short
Fault
Range
SET
NonRestricted
Operating Area
I Programmed
OUT
min
max
I Clampmin-max
OUT
I Faultmin-max
OUT
Drive
Logic
VCC
To
ISET2
R1
R2
ToISET2
VCC
Q1
Q2
Drive
Logic
R1Divider
setto0.9V
Whichisthe
FloatVoltage
OR
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
Figure 23. Programmed/Clamped Out Current
PRE_TERM Pre-Charge and Termination Programmable Threshold
Pre-Term is used to program both the pre-charge current and the termination current threshold. The pre-charge
current level is a factor of two higher than the termination current level. The termination can be set between 5%
and 50% of the programmed output current level set by ISET. If left floating the termination and pre-charge are
set internally at 10/20% respectively. The pre-charge-to-fast-charge, Vlowv threshold is set to 2.5V.
RPRE-TERM = %Term × KTERM = %Pre-CHG × KPRE-CHG (2) (2)
Where:
%Term is the percent of fast charge current where termination occurs;
%Pre-CHG is the percent of fast charge current that is desired during precharge;
KTERM and KPRE-CHG are gain factors found in the electrical specifications.
ISET2
Is a 3-state input and programs the Input Current Limit/Regulation Threshold. A low will program a regulated fast
charge current via the ISET resistor and is the maximum allowed input/output current for any ISET2 setting, Float
will program a 100mA Current limit and High will program a 500mA Current limit.
Below are two configurations for driving the 3-state ISET2 pin:
20 Copyright © 2010–2012, Texas Instruments Incorporated
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
TS
The TS pin is designed to follow the new JEITA temperature standard for Li-Ion and Li-Pol batteries. There are
now four thresholds, 60°C, 45°C, 10°C, and 0°C. Normal operation occurs between 10°C and 45°C. If between
0°C and 10°C the charge current level is cut in half and if between 45°C and 60°C the regulation voltage is
reduced to 4.1Vmax, see Figure 22. The TS feature is implemented using an internal 50μA current source to bias
the thermistor (designed for use with a 10k NTC β= 3370 (SEMITEC 103AT-2 or Mitsubishi TH05-3H103F)
connected from the TS pin to VSS. If this feature is not needed, a fixed 10k can be placed between TS and VSS to
allow normal operation. This may be done if the host is monitoring the thermistor and then the host would
determine when to pull the TS pin low to disable charge.
The TS pin has two additional features, when the TS pin is pulled low or floated/driven high. A low disables
charge (similar to a high on the BAT_EN feature) and a high puts the charger in TTDM.
Above 60°C or below 0°C the charge is disabled. Once the thermistor reaches –10°C the TS current folds back
to keep a cold thermistor (between –10°C and –50°C) from placing the IC in the TTDM mode. If the TS pin is
pulled low into disable mode, the current is reduced to 30μA, see Figure 20. Since the ITS current is fixed along
with the temperature thresholds, it is not possible to use thermistor values other than the 10k NTC (at 25°C).
For non-JEITA spins, the operating range is between 0°C and 45°C.
Termination and Timer Disable Mode (TTDM) -TS pin high
The battery charger is in TTDM when the TS pin goes high from removing the thermistor (removing battery
pack/floating the TS pin) or by pulling the TS pin up to the TTDM threshold.
When entering TTDM, the 10 hour safety timer is held in reset and termination is disabled. A battery detect
routine is run to see if the battery was removed or not. If the battery was removed then the CHG pin will go to its
high impedance state if not already there. If a battery is detected the CHG pin does not change states until the
current tapers to the termination threshold, where the CHG pin goes to its high impedance state if not already
there (the regulated output will remain on).
The charging profile does not change (still has pre-charge, fast-charge constant current and constant voltage
modes). This implies the battery is still charged safely and the current is allowed to taper to zero.
When coming out of TTDM, the battery detect routine is run and if a battery is detected, then a new charge cycle
begins and the CHG LED turns on.
If TTDM is not desired upon removing the battery with the thermistor, one can add a 237k resistor between TS
and VSS to disable TTDM. This keeps the current source from driving the TS pin into TTDM. This creates 0.1°C
error at hot and a 3°C error at cold.
Timers
The pre-charge timer is set to 30 minutes. The pre-charge current, can be programmed to off-set any system
load, making sure that the 30 minutes is adequate.
The fast charge timer is fixed at 10 hours and can be increased real time by going into thermal regulation, IN-
DPM or if in USB current limit. The timer clock slows by a factor of 2, resulting in a clock than counts half as fast
when in these modes. If either the 30 minute or ten hour timer times out, the charging is terminated and the CHG
pin goes high impedance if not already in that state. The timer is reset by disabling the IC, cycling power or going
into and out of TTDM.
Termination
Once the OUT pin goes above VRCH, (reaches voltage regulation) and the current tapers down to the
termination threshold, the CHG pin goes high impedance and a battery detect route is run to determine if the
battery was removed or the battery is full. If the battery is present, the charge current will terminate. If the battery
was removed along with the thermistor, then the TS pin is driven high and the charge enters TTDM. If the battery
was removed and the TS pin is held in the active region, then the battery detect routine will continue until a
battery is inserted.
Copyright © 2010–2012, Texas Instruments Incorporated 21
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
Battery Detect Routine
The battery detect routine should check for a missing battery while keeping the OUT pin at a useable voltage.
Whenever the battery is missing the CHG pin should be high impedance.
The battery detect routine is run when entering and exiting TTDM to verify if battery is present, or run all the time
if battery is missing and not in TTDM. On power-up, if battery voltage is greater than VRCH threshold, a battery
detect routine is run to determine if a battery is present.
The battery detect routine is disabled while the IC is in TTDM, or has a TS fault. See Figure 24 for the Battery
Detect Flow Diagram.
Refresh Threshold
After termination, if the OUT pin voltage drops to VRCH (100mV below regulation) then a new charge is initiated,
but the CHG pin remains at a high impedance (off).
Starting a Charge on a Full Battery
The termination threshold is raised by 14%, for the first minute of a charge cycle so if a full battery is removed
and reinserted or a new charge cycle is initiated, that the new charge terminates (less than 1 minute). Batteries
that have relaxed many hours may take several minutes to taper to the termination threshold and terminate
charge.
22 Copyright © 2010–2012, Texas Instruments Incorporated
Start
BATT_DETECT
Start 25mstimer
TimerExpired?
IsVOUT<VREG-100mV?
BatteryPresent
TurnoffSinkCurrent
Returntoflow
SetOUT REG
toVREG-400mV
Enablesinkcurrent
Reset & Start 25mstimer
No
Yes
TimerExpired? No
Yes
IsVOUT>VREG-300mV?
BatteryPresent
TurnoffSinkCurrent
Returntoflow
Yes
No
Yes
No
Battery Absent
Don’tSignalCharge
TurnoffSinkCurrent
ReturntoFlow
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
Figure 24. Battery Detect Routine
Copyright © 2010–2012, Texas Instruments Incorporated 23
BatteryPack
VBUS
GND
D+
D-
USBPort
DC+
GND
Adaptor
VDD
D-
D+
GND
TTDM
Host
SystemLoad
OR
ISET/100/500 mA
1
2
3
4
5
10
9
8
7
6
IN
ISET
VSS
PRETERM
PG NC
ISET2
CHG
TS
OUT
bq24090
+
+
1 Fm1 Fm
1kW
1.5kW
1.5kW
2kW
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
bq24090 CHARGER APPLICATION DESIGN EXAMPLE
Requirements
Supply voltage = 5 V
Fast charge current: IOUT-FC = 540 mA; ISET-pin 2
Termination Current Threshold: %IOUT-FC = 10% of Fast Charge or ~54mA
Pre-Charge Current by default is twice the termination Current or ~108mA
TS Battery Temperature Sense = 10k NTC (103AT)
Calculations
Program the Fast Charge Current, ISET:
RISET = [K(ISET) / I(OUT)]
from electrical characteristics table. . . K(SET) = 540A
RISET = [540A/0.54A] = 1.0 k
Selecting the closest standard value, use a 1 kresistor between ISET (pin 16) and VSS.
Program the Termination Current Threshold, ITERM:
RPRE-TERM = K(TERM) × %IOUT-FC
RPRE-TERM = 200/% × 10% = 2k
Selecting the closest standard value, use a 2 kresistor between ITERM (pin 15) and Vss.
One can arrive at the same value by using 20% for a pre-charge value (factor of 2 difference).
RPRE-TERM = K(PRE-CHG) × %IOUT-FC
RPRE-TERM = 100/% × 20%= 2k
TS Function
Use a 10k NTC thermistor in the battery pack (103AT).
To Disable the temp sense function, use a fixed 10k resistor between the TS (Pin 1) and Vss.
24 Copyright © 2010–2012, Texas Instruments Incorporated
bq24090, bq24091
bq24092, bq24093
www.ti.com
SLUS968C JANUARY 2010REVISED MAY 2012
CHG and PG
LED Status: connect a 1.5k resistor in series with a LED between the OUT pin and the CHG pin.
Connect a 1.5k resistor in series with a LED between the OUT pin and the and PG pin.
Processor Monitoring: Connect a pull-up resistor between the processor’s power rail and the CHG pin.
Connect a pull-up resistor between the processor’s power rail and the PG pin.
SELECTING IN AND OUT PIN CAPACITORS
In most applications, all that is needed is a high-frequency decoupling capacitor (ceramic) on the power pin, input
and output pins. Using the values shown on the application diagram, is recommended. After evaluation of these
voltage signals with real system operational conditions, one can determine if capacitance values can be adjusted
toward the minimum recommended values (DC load application) or higher values for fast high amplitude pulsed
load applications. Note if designed for high input voltage sources (bad adaptors or wrong adaptors), the capacitor
needs to be rated appropriately. Ceramic capacitors are tested to 2x their rated values so a 16V capacitor may
be adequate for a 30V transient (verify tested rating with capacitor manufacturer).
THERMAL PACKAGE
The bq2409x family is packaged in a thermally enhanced MSOP package. The package includes a thermal pad
to provide an effective thermal contact between the IC and the printed circuit board (PCB). The power pad
should be directly connected to the VSS pin. Full PCB design guidelines for this package are provided in the
application note entitled: Power Pad Thermally Enhanced Package Note (SLMA002). The most common
measure of package thermal performance is thermal impedance (θJA ) measured (or modeled) from the chip
junction to the air surrounding the package surface (ambient). The mathematical expression for θJA is:
θJA = (TJ T) / P (3) (3)
Where:
TJ= chip junction temperature
T = ambient temperature
P = device power dissipation
Factors that can influence the measurement and calculation of θJA include:
1. Whether or not the device is board mounted
2. Trace size, composition, thickness, and geometry
3. Orientation of the device (horizontal or vertical)
4. Volume of the ambient air surrounding the device under test and airflow
5. Whether other surfaces are in close proximity to the device being tested
Due to the charge profile of Li-Ion and Li-Pol batteries the maximum power dissipation is typically seen at the
beginning of the charge cycle when the battery voltage is at its lowest. Typically after fast charge begins the pack
voltage increases to 3.4V within the first 2 minutes. The thermal time constant of the assembly typically takes a
few minutes to heat up so when doing maximum power dissipation calculations, 3.4V is a good minimum voltage
to use. This is verified, with the system and a fully discharged battery, by plotting temperature on the bottom of
the PCB under the IC (pad should have multiple vias), the charge current and the battery voltage as a function of
time. The fast charge current will start to taper off if the part goes into thermal regulation.
The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal
PowerFET. It can be calculated from the following equation when a battery pack is being charged :
P = [V(IN) V(OUT)] × I(OUT) + [V(OUT) V(BAT)] × I(BAT) (3)
The thermal loop feature reduces the charge current to limit excessive IC junction temperature. It is
recommended that the design not run in thermal regulation for typical operating conditions (nominal input voltage
and nominal ambient temperatures) and use the feature for non typical situations such as hot environments or
higher than normal input source voltage. With that said, the IC will still perform as described, if the thermal loop
is always active.
Copyright © 2010–2012, Texas Instruments Incorporated 25
bq24090, bq24091
bq24092, bq24093
SLUS968C JANUARY 2010REVISED MAY 2012
www.ti.com
Leakage Current Effects on Battery Capacity
To determine how fast a leakage current on the battery will discharge the battery is an easy calculation. The time
from full to discharge can be calculated by dividing the Amp-Hour Capacity of the battery by the leakage current.
For a 0.75AHr battery and a 10μA leakage current (750mAHr/0.010mA = 75000 Hours), it would take 75k hours
or 8.8 years to discharge. In reality the self discharge of the cell would be much faster so the 10μA leakage
would be considered negligible.
Layout Tips
To obtain optimal performance, the decoupling capacitor from IN to GND (thermal pad) and the output filter
capacitors from OUT to GND (thermal pad) should be placed as close as possible to the bq2409x, with short
trace runs to both IN, OUT and GND (thermal pad).
All low-current GND connections should be kept separate from the high-current charge or discharge paths
from the battery. Use a single-point ground technique incorporating both the small signal ground path and the
power ground path.
The high current charge paths into IN pin and from the OUT pin must be sized appropriately for the maximum
charge current in order to avoid voltage drops in these traces
The bq2409x family is packaged in a thermally enhanced MLP package. The package includes a thermal pad
to provide an effective thermal contact between the IC and the printed circuit board (PCB); this thermal pad is
also the main ground connection for the device. Connect the thermal pad to the PCB ground connection. It is
best to use multiple 10mil vias in the power pad of the IC and in close proximity to conduct the heat to the
bottom ground plane. The bottom ground place should avoid traces that “cut off” the thermal path. The thinner
the PCB the less temperature rise. The EVM PCB has a thickness of 0.031 inches and uses 2 oz. (2.8mil
thick) copper on top and bottom, and is a good example of optimal thermal performance.
SPACER
REVISION HISTORY
Changes from Original (January 2010) to Revision A Page
Changed VDO(IN-OUT), MAX value From: 500 mV To: 520 mV in the Elect Characteristics table ........................................... 4
Changed IPRE-TERM MAX value From: 79 µA to 81µA in the Elect Characteristics table ....................................................... 4
Changed VCLAMP(TS) MIN value From: 1900 mV to 1800 mV in the Elect Characteristics table ........................................... 5
Changes from Revision A (February 2010) to Revision B Page
Changed the device number on the front page circuit From: bq24090 To: bq2409x ........................................................... 1
Changed the ORDERING INFORMATION table Marking column From: Product Preview To: bq24092 and bq24093 ...... 2
Changes from Revision B (June 2010) to Revision C Page
Changed all instances of Li-ion To: Li-ion and Li-Pol ........................................................................................................... 1
26 Copyright © 2010–2012, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com 11-May-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
BQ24090DGQR ACTIVE MSOP-
PowerPAD DGQ 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
BQ24090DGQT ACTIVE MSOP-
PowerPAD DGQ 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
BQ24091DGQR ACTIVE MSOP-
PowerPAD DGQ 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
BQ24091DGQT ACTIVE MSOP-
PowerPAD DGQ 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
BQ24092DGQR ACTIVE MSOP-
PowerPAD DGQ 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
BQ24092DGQT ACTIVE MSOP-
PowerPAD DGQ 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
BQ24093DGQR ACTIVE MSOP-
PowerPAD DGQ 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
BQ24093DGQT ACTIVE MSOP-
PowerPAD DGQ 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PACKAGE OPTION ADDENDUM
www.ti.com 11-May-2012
Addendum-Page 2
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
BQ24090DGQR MSOP-
Power
PAD
DGQ 10 2500 330.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
BQ24090DGQT MSOP-
Power
PAD
DGQ 10 250 180.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
BQ24091DGQR MSOP-
Power
PAD
DGQ 10 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
BQ24091DGQT MSOP-
Power
PAD
DGQ 10 250 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
BQ24091DGQT MSOP-
Power
PAD
DGQ 10 250 180.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
BQ24092DGQR MSOP-
Power
PAD
DGQ 10 2500 330.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
BQ24092DGQT MSOP-
Power
PAD
DGQ 10 250 180.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
BQ24093DGQR MSOP- DGQ 10 2500 330.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Jun-2012
Pack Materials-Page 1
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
Power
PAD
BQ24093DGQT MSOP-
Power
PAD
DGQ 10 250 180.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
BQ24090DGQR MSOP-PowerPAD DGQ 10 2500 346.0 346.0 35.0
BQ24090DGQT MSOP-PowerPAD DGQ 10 250 203.0 203.0 35.0
BQ24091DGQR MSOP-PowerPAD DGQ 10 2500 364.0 364.0 27.0
BQ24091DGQT MSOP-PowerPAD DGQ 10 250 364.0 364.0 27.0
BQ24091DGQT MSOP-PowerPAD DGQ 10 250 203.0 203.0 35.0
BQ24092DGQR MSOP-PowerPAD DGQ 10 2500 346.0 346.0 35.0
BQ24092DGQT MSOP-PowerPAD DGQ 10 250 203.0 203.0 35.0
BQ24093DGQR MSOP-PowerPAD DGQ 10 2500 346.0 346.0 35.0
BQ24093DGQT MSOP-PowerPAD DGQ 10 250 203.0 203.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Jun-2012
Pack Materials-Page 2
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