BSS 80, BSS 82
1 Nov-02-1999
PNP Silicon Switching Transistors
• High DC current gain: 0.1mA to 500 mA
• Low collector-emitter saturation voltage
• Complementary types: BSS 79, BSS 81 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BSS 80B
BSS 80C
BSS 82B
BSS 82C
CHs
CJs
CLs
CMs
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
SOT-23
SOT-23
SOT-23
SOT-23
Maximum Ratings
Parameter Symbol BSS 80 BSS 82 Unit
Collector-emitter voltage VCEO 40 60 V
Collector-base voltage VCBO 60 V
Emitter-base voltage VEBO 5
DC collector current IC800 mA
Peak collector current ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS = 77 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
K/W
RthJA ≤290
Junction ambient 1)
Junction - soldering point RthJS ≤220
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BSS 80, BSS 82
2 Nov-02-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
typ. max.min.
DC Characteristics
V(BR)CEO
40
60
BSS 80
BSS 82
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
-
-
V
-
-
V(BR)CBO
Collector-base breakdown voltage
IC = 10 µA, IB = 0
-60 -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO - -5
10Collector cutoff current
VCB = 50 V, IE = 0
nA- -ICBO
- 10 µACollector cutoff current
VCB = 50 V, IE = 0 , TA = 150 °C
ICBO -
- - nA10IEBO
Emitter cutoff current
VEB = 3 V, IC = 0
hFE
40
75
40
100
40
100
40
100
40
50
-
-
-
-
-
-
-
-
-
-
-DC current gain 1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
-
-
-
-
-
-
120
300
-
-
BSS 80/82B
BSS 80/82C
BSS 80/82B
BSS 80/82C
BSS 80/82B
BSS 80/82C
BSS 80/82B
BSS 80/82C
BSS 80/82B
BSS 80/82C
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat V
-
-
-
-
0.4
1.6
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
-
-
1.3
2.6
1) Pulse test: t ≤ 300µs, D = 2%
BSS 80, BSS 82
3 Nov-02-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 6 - pF
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
td- - 10 ns
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
tr- - 40
Storage time
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
tstg - - 80
Fall time
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
tf- - 30
Test circuits
Delay and rise time Storage and fall time
EHN00047
Input
Z
0
200
Osc.
r
t
50
1
-30
= 50
< 2 ns < 5 ns
t
r
200
-16
0
Ω
Ω
Ω
Ω
V
ns
V
k
EHN00048
37
-6
-30
0
+15 V
1
Ω
Ω
k
V
V
< 2ns
= 50
Input
t
Z
r
0
Ω
200 ns
1
Ω
k
50
Ω
Osc.
< 5 ns
t
r
BSS 80, BSS 82
4 Nov-02-1999
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0
0
EHP00679BSS 80/82
15050 100 ˚C
T
A
S
T
100
200
300
mW
400
Ptot
T T;
AS
Collector-base capacitance CCB = f (VCB)
f = 1MHz
EHP00680BSS 80/82
10
pF
10 10 V
C
CB
10
5
10
cb
555
-1 0 1 2
10
2
1
100
5
V
Transition frequency fT = f (IC)
VCE = 20V
EHP00682BSS 80/82
10
MHz
10 10 mA
f
C
10
5
10
T
555
Ι
0123
10
3
2
10
1
5
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00681BSS 80/82
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot max
tot
P
DC
P
p
t
tp
=
DT
tp
T
BSS 80, BSS 82
5 Nov-02-1999
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
EHP00683BSS 80/82
10
0V
10
3
1
10
-1
5
10
0
5
mA
0.2 0.4 0.6 0.8 1.0 1.2 1.6
5
10
2
V
BE
V
CE
CE satBE sat
VV,
Ι
C
Delay time td = f (IC)
Rise time tr = f (IC)
EHP00684BSS 80/82
10
10 mA
5
10
3
2
101
5
10 10
01 2
5 5
ns
3
10
5
td
tr
r
t t,d
C
Ι
CC
CC
V
V
= 0 V
= 20 V
BE
BE ,
V,
V
= 30 V
= 10 V,
Fall time tf = f (IC)
EHP00686BSS 80/82
10
10 mA
5
10
3
2
10
1
5
10 10
012
5 5
ns
FE
h= 10
3
10
5
FE
= 20h
V
CC
= 30 V
t
f
C
Ι
Storage time tstg = f(IC)
EHP00685BSS 80/82
10
10 mA
t
C
5
stg
10
3
2
10
1
5
10 10
01 2
Ι
5 5
ns
FE
h= 10
3
10
5
FE
= 20h
BSS 80, BSS 82
6 Nov-02-1999
DC current gain hFE = f (IC)
VCE = 10V
EHP00687BSS 80/82
10
10 mA
h
C
10
5
FE
10
3
2
101
5
10 10 10
-1 0 1 2 3
Ι
-50 ˚C
25 ˚C
150 ˚C
