MITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE FK10VS-12 OUTLINE DRAWING Dimensions in mm 4 ___10.5MAX. ; 45 \ fo 7 3 lis \ 2 oe \ ae 4 on 218 a9 2\ Se g & gi 4: GATE @ DRAIN 6 Voss Cee ee eked ete eee eee eee cette eeaees 600V 3: SOURCE @ DS (ON) (MAX) coer eer et terete etna neenne srt eees 1,180 4 DRAIN WD vcr t cere e cece nent cere tee e nee et nee ee etna 10A @ Integrated Fast Recovery Diode (MAX.) ---- 150ns TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS (Tc = 25C) Conditions Voss Drain-source 600 Vass Gate-source +30 Drain 10 Drain current 30 Source current 10 Source current 30 Maximum 150 5 ~ +150 55 ~ +150 1.2 MITSUBISHI 3-227 ELECTRICMITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (tech = 25C) Symbol Parameter Test conditions - Limits Unit Min. Typ. Max V (BR) DSS | Drain-source breakdown voltage | ID = 1mA, VGS = OV 600 _ Vv V (BR) GSS | Gate-source breakdown voltage | IG = +100uA, VDS = OV +30 _ _ v lass Gate leakage current VGS = +25V, Vos = OV ~ _ +10 HA loss Drain current Vos = 6O0V, Vas = OV _ _ 1 mA VQs (th) Gate-source threshold voitage ID = 1mA, Vos = 10V 2 3 4 Vv rDS (ON) Drain-source on-state resistance | ID = 5A, Vas = 10V _ 6.90 1.18 Q VbS (ON) | Drain-source on-state voltage | ID = 5A, Vas = 10V _ 4.50 5.90 Vv ' yfs | Forward transfer admittance ID = 5A, Vos = 10V 45 7.0 _ S$ Ciss Input capacitance _ 1500 _ pF Coss Output capacitance Vos = 25V, Vas = OV, f = 1MHz _ 170 _ pF Crss Reverse transfer capacitance _ 25 _ pF te (on) Turn-on delay time _ 25 ns us Rise time _ Vo00 = 200V, ID = 5A, VGs = 10V, AGEN = Ras = 502 = 38 = ns td (off) Turn-off delay time _ 130 _ ns tf Fall time _ 45 _ ns VsD Source-drain vaitage is = 5A, VGS = OV 1.5 2.0 Vv Rthich-c) | Thermal resistance Channel to case _ _ 0.83 CiW tr Reverse recevery time Is = 10A, dis/dt = -100A/1s _ 150 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 = 3 10us 2 160 < 10) Zz 5 SD 129 5 3 < wo 2 a a B80 3 s : 2: = 40 e 3b-tcr aed o ; Single Pulse a 10-7 7 % 50 100 150 200 Qn 23 5710: 23 57102 23 57109 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) 3 ~ 228 MITSUBISHI ELECTRICDRAIN CURRENT lo (A) DRAIN-SOURCE ON-STATE VOLTAGE Vbs (ON) (V) DRAIN CURRENT Ip (A) 0 QUTPUT CHARACTERISTICS (TYPICAL) VGs = 20V 10 20 30 10V 6V To = 26C Pulse Test 40 50 DRAIN-SOQURCE VOLTAGE Vos () ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 4 8 12 To = 26C Pulse Test 10A 5A 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) 0 4 is} 12 C= 26C Vos=50V Pulse Test 16 20 GATE-SOURCE VOLTAGE Vas (V) MITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VG6s = 20V 10 10V Te = 25C 6V Pulse Test z= 8 2 5 6 wi x a a 4 = a 2 AV 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 Te = 25C we Pulse Test VGS = 10V Ea 16 eS 20 as 32 64 12 o EO 2 08 92 20 <= oe we04 0 107 23 6710923 67101 23 57102 DRAIN CURRENT 10 (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 Vos = 10V Te = 25C Pulse Test Nw os FORWARD TRANSFER ADMITTANCE | yis/(S) 10 23 571700 23 65710 DRAIN CURRENT Ip (A) MITSUBISHI 3 - 229 ELECTRICMITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 108 Toh = 25C Vob = 200V Vas = 10V EN = RGS = 50Q NM on 192 on 102 CAPACITANCE Ciss, Coss, Crss (pF ho SWITCHING TIME (ns) 7 ; 3 ch = 25C 2Tf = TMHz Crss 2 tr 101 101 23 5710923 5710'23 5710223 101. 23 6710 23 5 710 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ip (A) GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS.GATE CHARGE FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) 20 Gs = OV Toh = 25 hs 26C Pulse Test Ip = 10A 16 32 Vos = 100V TC = 125C 12 24 GATE-SOURCE VOLTAGE Vas (V) SOURCE CURRENT Is (A) 0 20 40 60 80 100 9 0.8 1.6 2.4 32 40 GATE GHARGE Qg (nC} SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE CHANNEL TEMPERATURE (TYPICAL) (TYPICAL) 10! 5.0 7} VGS = 10V 5b iD = 1/2ID Pulse Test Vos = 10V {p= ImA 4.0 3 2 3.0 19 7 5 2.0 GATE-SOQURCE THRESHOLD VOLTAGE Vas {thy (V) ho 0 50 100 150 200 250 -50 0 50 100 150 DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (C) DRAIN-SOURCE ON-STATE RESISTANCE 10s (ON) (25C) CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tech (C) . MITSUBISHI 9 = 280 ELECTRICMITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) tre (4S) REVERSE RECOVERY TIME BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = OV lp = 1mA 0.4 -50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 < Is = 104 i 3 <p Vss=0V 43 7 2 =, VD0 = 2 102 +01 NW oT oS Ra & ol Do REVERSE RECOVERY CURRENT TRANSIENT THERMAL IMPEDANCE 2th (ch-c) (C/W) 10! wm Toh = 25C w== Toh = 150C Z 5 7102 2 3 5 7 108 oo 23 SOURCE CURRENT dis/dt (A/us) DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 108 102 7 5 dsidt = -100A/us VGS = OV VoD = 250V cis nN mw 102 5 3 2 Tot = 25 === Tot = 150C 5 710' 2 3 nN Ww REVERSE RECOVERY TIME tr (ws) 10 5 7 102 REVERSE RECOVERY CURRENT rr (A) 101 10 2 3 SOURCE CURRENT Is (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS = moa ane ~ = nw aS o-llo o Pom / LLL i p= oy 0.05 0.02 0.01 row owt Pulse 10-423 5710-323 5710-223 571023 5710923 5710'23 5710" oary BD 0 PULSE WIDTH tw (3) ate MITSUBISHI ELECTRIC 3 .- 23)