© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 12
1Publication Order Number:
MJE200/D
MJE200 - NPN,
MJE210 - PNP
Preferred Device
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low-power, high-gain
audio amplifier applications.
Features
•Collector-Emitter Sustaining Voltage -
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
•High DC Current Gain -
hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 5.0 Adc
•Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
•High Current-Gain - Bandwidth Product -
fT= 65 MHz (Min) @ IC
= 100 mAdc
•Annular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB
•Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCB 25 Vdc
Emitter-Base Voltage VEB 8.0 Vdc
Collector Current - Continuous
- Peak
IC5.0
10
Adc
Base Current IB1.0 Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD15
0.12
W
mW/_C
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD1.5
0.012
W
mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Case qJC 8.34 _C/W
Thermal Resistance,
Junction-to-Ambient
qJC 83.4 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJE200 TO-225 500 Units/Box
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
http://onsemi.com
MJE200G TO-225
(Pb-Free)
500 Units/Box
TO-225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JE2x0G
Y = Year
WW = Work Week
JE2x0 = Device Code
x = 0 or 1
G = Pb-Free Package
Preferred devices are recommended choices for future use
and best overall value.
MJE210 TO-225 500 Units/Box
MJE210G TO-225
(Pb-Free)
500 Units/Box
MJE210T TO-225 50 Units/Rail
MJE210TG TO-225
(Pb-Free)
50 Units/Rail
MJE200 - NPN, MJE210 - PNP
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
25
ÎÎÎ
Î
Î
Î
ÎÎÎ
-
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125_C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
-
-
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
nAdc
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 8.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
-
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
nAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 1)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 5.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
70
45
10
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
-
180
-
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector-Emitter Saturation Voltage (Note 1)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
-
-
-
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
0.3
0.75
1.8
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base-Emitter Saturation Voltage (Note 1)
(IC = 5.0 Adc, IB = 1.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
-
ÎÎÎ
Î
Î
Î
ÎÎÎ
2.5
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base-Emitter On Voltage (Note 1)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
-
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.6
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current-Gain - Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
65
ÎÎÎ
ÎÎÎ
-
ÎÎÎÎ
ÎÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE200
MJE210
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Cob
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
-
-
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
80
120
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2.0%.
2. fT = ⎪hfe⎪• ftest.
16
20
Figure 1. Power Derating
T, TEMPERATURE (°C)
040 60 100 120 160
12
PD, POWER DISSIPATION (WATTS)
1.6
0
1.2
8.0 0.8
4.0 0.4
80 140
TC
PD, POWER DISSIPATION (WATTS)
TA
MJE200 - NPN, MJE210 - PNP
http://onsemi.com
3
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
1K
IC, COLLECTOR CURRENT (AMPS)
VCC = 30 V
IC/IB = 10
TJ = 25°C
t, TIME (ns)
500
300
200
100
50
td
30
20
10
5
1
0.01 0.03 0.05 0.50.20.1 0.3 10
Figure 3. Turn-On Time
3
2
5213
tr
MJE200
MJE210
0.02
t, TIME (ms)
0.01
0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL RESISTANCE
qJC(t) = r(t) qJC
qJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
(NORMALIZED)
Figure 4. Thermal Response
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
MJE200 - NPN, MJE210 - PNP
http://onsemi.com
4
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 30
7.0
0.7 BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
Figure 5. Active Region Safe Operating Area
500ms
dc
5.0
20107.05.03.02.01.0
100ms
TJ = 150°C
IC, COLLECTOR CURRENT (AMP)
0.2
0.5
1.0
2.0
3.0
0.3
1.0ms
5.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 6. Turn-Off Time
t, TIME (ns)
30
20
0.01 0.03 0.05 0.50.2
0.02 0.1 0.3 105213
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
VR, REVERSE VOLTAGE (VOLTS)
20 40
100
200
50
Figure 7. Capacitance
70
20106.04.02.01.00.4
C, CAPACITANCE (pF)
0.6
TJ = 25°C
Cib
Cob
MJE200 (NPN)
MJE210 (PNP)
30
MJE200
MJE210
MJE200 - NPN, MJE210 - PNP
http://onsemi.com
5
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain
Figure 9. “On” Voltage
IC, COLLECTOR CURRENT (AMP)
200
400
0.07 0.1 0.3 5.00.05
100
80
60
40
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
20
0.7 1.0 3.02.00.5
25°C
TJ = 150°C
-55°C
2.0
0.05
IC, COLLECTOR CURRENT (AMP)
5.0
1.6
1.2
0.8
0.4
03.02.00.07 0.20.1 0.50.3 1.00.7
TJ = 25°C
V, VOLTAGE (VOLTS)
NPN
MJE200
PNP
MJE210
0.07 0.1 0.3 5.00.05 0.2 0.7 1.0 3.02.00.5
200
400
100
80
60
40
20
hFE, DC CURRENT GAIN
25°C
TJ = 150°C
-55°C
VCE = 1.0 V
VCE = 2.0 V
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
qVC for VCE(sat)
qVB for VBE
2.0
0.05
1.6
1.2
0.8
0.4
03.02.00.07 0.20.1 0.50.3 1.00.7
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
0.07 0.1 0.3 5.00.05 0.2 0.7 1.0 3.02.00.5
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
0.07 0.1 0.3 5.00.05 0.2 0.7 1.0 3.02.00.5
*qVC for VCE(sat)
qVB for VBE
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
VCE = 1.0 V
VCE = 2.0 V
5.0
MJE200 - NPN, MJE210 - PNP
http://onsemi.com
6
PACKAGE DIMENSIONS
TO-225
CASE 77-09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
-B-
-A- M
K
FC
Q
H
V
G
S
D
J
R
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---
__
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MJE200/D
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