Sep.2000
OUT
TEMP
Si
GND
VN1
WN
VNC
FO
NC
NWVUP
RfO
VCC
FO
IN
TH
GND
OUT
Si
GND
VN
VCC
FO
IN
GND
OUT
Si
GND
UN
VCC
FO
IN
GND
OUT
Si
GND
VWP1
WP
WFO
VFO
UFO
VWPC
VCC
FO
IN
GND
OUT
Si
GND
VVP1
VP
VVPC
VCC
FO
IN
GND
OUT
Si
GND
VUP1
UP
VUPC
VCC
FO
IN
GND
RfO = 1.5k OHM
TERMINAL CODE
1. W
FO
2. V
WPC
3. W
P
4. V
WP1
5. V
FO
6. V
VPC
7. V
P
8. V
VP1
9. U
FO
10. V
UPC
11. U
P
12. V
UP1
13. NC
14. F
O
15. VNC
16. VN1
17. UN
18. VN
19. WN
S NUTS (5 TYP.)
T (4 TYP.)
DP A
B K E
1234
5678
9101112
13 14 1516
17 18 19
NP
UVW
J
TYP.
N
V
U
RP
U
M
L - TYP.
M
Q
CG
F
H
Y
XW
Z - TYP.
AA - TYP.
BB SQ PIN - TYP.
(19 PLACES)
CCφ
(4 PLACES)
DETAIL A
SEE
DETAIL A
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Short Circuit
– Over Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM75CVA120 is a 1200V,
75 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 75 120
Dimensions Inches Millimeters
A 4.72 120.0
B 4.02 102.0
C 0.95+0.04/-0.02 24.1 +1.0/-0.5
D 4.13±0.010 105.0±0.25
E 3.43±0.010 87.0±0.25
F 0.16 4.0
G 0.95 24.1
H 0.42 10.6
J 0.87 22.0
K 3.51±0.02 89.2±0.5
L 0.47 12.0
M 0.48 12.3
N 0.77 19.5
P 0.30 7.5
Dimensions Inches Millimeters
Q 0.59 15.1
R 0.72 18.25
S M5 Metric M5
T 0.22 Dia. Dia. 5.5
U 0.56±0.010 14.1±0.25
V 1.72±0.012 43.57±0.3
W 0.57±0.012 14.6±0.3
X 3.35 85.2
Y 0.85 21.6
Z 0.10±0.010 2.54±0.25
AA 1.37±0.010 3.49±0.25
BB 0.02 SQ 0.64 SQ
CC
0.12+0.04/-0.02 3.0+1.0/-0.5
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM75CVA120
FLAT-B ASE TYPE
INSULATED PACKAGE
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CVA120
FLAT-B ASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol Ratings Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M5 Mounting Screws — 2.5 ~ 3.5 N · m
Mounting Torque, M5 Main Terminal Screws — 2.5 ~ 3.5 N · m
Module Weight (Typical) — 730 Grams
Supply Voltage (Applied between P - N) VCC(surge) 1000 Volts
Supply Voltage Protected by SC (VD = 13.5 ~16.5V, Inverter Part, Tj = 125°C Start) VCC(prot.) 800 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied betw een VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC)V
CIN 20 Volts
Fault Output Supply Voltage (
Applied between U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
, F
O
-V
NC
)V
FO 20 Volts
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 1200 Volts
Collector Current, (TC = 25°C) IC75 Amperes
Peak Collector Current, (TC = 25°C) ICP 150 Amperes
Collector Dissipation (TC = 25°C) PC500 Watts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CVA120
FLAT-B ASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Shor t Circuit Trip Level SC -20°C ≤ Tj ≤ 125°C, VD = 15V 105 — — Amperes
Short Circuit Current Delay Time toff(SC) VD = 15V — 10 — µs
Over Temperature Protection OT Trip Level 100 110 120 °C
(VD = 15V, Lower Arm) OTrReset Level 85 95 105 °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
(-20°C ≤ Tj ≤ 125°C) UVrReset Level — 12.5 — Volts
Circuit Current IDVD = 15V, VCIN = 15V, VN1-VNC —4055mA
VD = 15V, VCIN = 15V, VXP1-VXPC —1318mA
Input ON Threshold Voltage Vth(on) Applied between UP-VUPC, VP-VVPC, 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) WP-VWPC, UN · VN · WN-VNC 1.7 2.0 2.3 Volts
Fault Output Current IFO(H) VD = 15V, VFO = 15V* — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V* — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V* 1.0 1.8 — ms
*Fault output is given only when the internal SC, OT, and UV protections circuits of either an upper-arm or a lower-ar m device operate to protect it.
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CVA120
FLAT-B ASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector-Emitter Cutoff Current ICES VCE = V CES, VD = 15V, Tj = 25°C — — 1.0 mA
VCE = VCES, VD = 15V, Tj = 125°C — — 10.0 mA
FWDi Forward Voltage VEC -IC = 75A, VD = 15V, VCIN = 15V — 2.50 3.50 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 75A, — 2.65 3.30 Volts
Pulsed, Tj = 25°C
VD = 15V, VCIN = 0V, IC = 75A, — 2.60 3.25 Volts
Pulsed, Tj = 125°C
Inductive Load Switching Times ton 0.4 0.9 2.3 µs
trr VD = 15V, VCIN = 0V ↔ 15V — 0.2 0.3 µs
tC(on) VCC = 600V, IC = 75A, — 0.4 1.0 µs
toff Tj = 125°C — 2.4 3.4 µs
tC(off) — 0.7 1.2 µs
Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance R th(j-c)Q Each Inverter IGBT — — 0.25 °C/Watt
Rth(j-c)F Each Inverter FWDi — — 0.51 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.025 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across P-N Terminals ≤ 800 Volts
VCE(surge) Applied across P-N Terminals ≤ 1000 Volts
VDApplied between VUP1-VUPC,15 ± 1.5 Volts
VVP1-VVPC, VWP1-VWPC *, VN1-VNC
Input ON Voltage VCIN(on) Applied between ≤ 0.8 Volts
Input OFF Voltage VCIN(off)
U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
, U
N
· V
N
· W
N
-V
NC
≥ 4.0 Volts
Arm Shoot-Through Blocking Time tdead For IPM's each Input Signal ≥ 3.0 µs
*With ripple satisfying the following conditions, dv/dt swing ≤ 5V/µs, Variation ≤ 2V peak to peak.
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CVA120
FLAT-B ASE TYPE
INSULATED PACKAGE
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE(SAT)
, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0 50 100 150
1.0
0
V
D
= 15V
V
CIN
= 0V
2.0
3.0
CONTROL SUPPLY VOLTAGE, V
D
, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE,
V
CE(SAT)
, (VOLTS)
COLLECTOR-EMITTER
SATURATON VOLTAGE CHARACTERISTICS
(TYPICAL)
0 131517
1.0
0
2.0
3.0
I
C
= 75A
V
CIN
= 0V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 1.0 2.0 3.0
30
0
V
D
= 17V 13
60
90
15
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
on
, t
off
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10
1
10
1
10
2
10
3
10
0
10
-1
t
on
V
CC
= 600V
V
D
= 15V
Inductive Load
t
off
T
j
= 25°C
T
j
= 125°C
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES,
t
c(on)
, t
c(off)
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10
1
10
1
10
2
10
3
10
0
10
-1
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25°C
T
j
= 125°C
t
c(on)
t
c(off)
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING ENERGY, P
SW(on)
, P
SW(off)
, (mJ/PULSE)
SWITCHING LOSS
CHARACTERISTICS (TYPICAL)
10
2
10
1
10
2
10
3
10
0
10
1
10
-1
P
SW(off)
P
SW(on)
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25°C
T
j
= 125°C
P
SW(off)
COLLECTOR CURRENT, I
C
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10
1
10
1
10
2
10
3
10
-1
10
-2
I
rr
t
rr
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25°C
T
j
= 125°C
10
3
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
10
0
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
EMITTER CURRENT, I
E
, (AMPERES)
DIODE FORWARD CHARACTERISTICS
10
2
10
1
10
0
T
j
= 25°C
T
j
= 125°C
V
D
= 15V
V
CIN
= 15V
0 1.0 2.0 3.0
CARRIER FREQUENCY, f
C
, (kHz)
CIRCUIT CURRENT, I
D
, (mA)
CIRCUIT CURRENT VS.
CARRIER FREQUENCY
0 102030
50
0
V
D
= 15V
100
150
T
j
=
25°C
P-SIDE
N-SIDE
T
j
= 25°C
T
j
= 125°C
T
j
= 25
o
C
V
CIN
= 0V
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CVA120
FLAT-B ASE TYPE
INSULATED PACKAGE
CONTROL SUPPLY VOLTAGE, V
D,
(VOLTS)
SHORT CIRCUIT CURRENT TRIP LEVEL, (V
D
= 15V) = 1.0
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
0 131517
0.8
0
1.0
1.2
T
j
= 25°C
JUNCTION TEMPERATURE, T
j
, (°C)
SHORT CIRCUIT CURRENT TRIP LEVEL, (T
j
= 25°C) = 1.0
OVER CURRENT TRIP LEVEL
TEMPERATURE DEPENDENCY (TYPICAL)
20-60 100 180
0.8
0
1.0
1.2
V
D
= 15V
JUNCTION TEMPERATURE, T
j
, (°C)
FAULT OUTPUT PULSE WIDTH TRIP LEVEL,
t
FO
(T
j
= 25°C) = 1.0
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
20-60 100 180
0.8
0
1.0
1.2
V
D
= 15V
JUNCTION TEMPERATURE, T
j
, (°C)
SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION
TRIP RESET LEVEL, UV
t
, UV
r
, (VOLTS)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
20 100 180
11
0
13
15
V
D
= 15V
UV
t
UV
r
-60
TIME, (s)
TRANSIENT IMPEDANCE, Z
th(j-c)
,
(NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)Q
= 0.25°C/W
TIME, (s)
TRANSIENT IMPEDANCE, Z
th(j-c)
,
(NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)F
= 0.51°C/W
