BSO203P H
OptiMOS® P-Power-Transistor
Features
• dual P-Channel in SO8
• Qualified according JEDEC for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
• Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current1) IDVGS=4.5 V, TA=25 °C -8.2 -7.0 A
VGS=4.5 V, TA=70 °C -6.6 -5.8
VGS=2.5 V, TA=25 °C -6.5 -5.7
VGS=2.5 V, TA=70 °C -5.2 -4.6
Pulsed drain current2) ID,pulse TA=25 °C
Avalanche energy, single pulse EAS ID=-8.2 A, RGS=25 ΩmJ
Gate source voltage VGS V
Power dissipation1) Ptot TA=25 °C 2.0 1.6 W
Operating and storage temperature Tj, Tstg °C
ESD class JESD22-A114 HBM
Soldering temperature °C
IEC climatic category; DIN IEC 68-1
±12
-55 ... 150
Value
-32.8
97
260
1B (500V - 1 kV)
55/150/56
Type Package Marking
BSO203P H PG-DSO-8 203P
PG-DSO-8
VDS -20 V
RDS(on),max VGS=4.5 V 21 mΩ
VGS=2.5 V 34
ID-8.2 A
Product Summary
Lead free Packing
Yes dry
Halogen free
Yes
Rev.1.31 page 1 2010-02-15
BSO203P H
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point RthJS - - 50 K/W
Thermal resistance,
junction - ambient RthJA
minimal footprint,
tp≤10 s - - 110
minimal footprint,
steady state - - 150
6 cm2 cooling area1),
tp≤10 s - - 62.5
6 cm2 cooling area1),
steady state --80
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
VGS=0 V, ID= -
0.25 mA -20 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID= -100 µA -0.6 -0.9 -1.2
Zero gate voltage drain current IDSS
VDS= -20 V, VGS=0 V,
Tj=25 °C - - -1 µA
VDS= -20 V, VGS=0 V,
Tj=150 °C - - -100
Gate-source leakage current IGSS VGS= -12 V, VDS=0 V - - -100 nA
Drain-source on-state resistance RDS(on) VGS=2.5 V, ID=-6.5 A -2234
mΩ
VGS=4.5 V, ID=-8.2 A -1521
Gate resistance RG- 3.3 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-6.5 A 18 33 - S
3) See figure 13 for more detailed information
Values
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
Rev.1.31 page 2 2010-02-15
BSO203P H
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 2500 3750 pF
Output capacitance Coss - 820 1230
Reverse transfer capacitance Crss - 680 1020
Turn-on delay time td(on) -1624ns
Rise time tr-5583
Turn-off delay time td(off) -4568
Fall time tf- 74 111
Gate Char
g
e Characteristics4)
Gate to source charge Qgs --4-6nC
Gate charge at threshold Qg(th) --4-6
Gate to drain charge Qgd - -10 -16
Switching charge Qsw - -10 -16
Gate charge total Qg- -26 -39
Gate plateau voltage Vplateau - -1.6 - V
Output charge Qoss VDD=10 V, VGS=0 V -1520nC
Reverse Diode
Diode continuous forward current IS- - 2.5 A
Diode pulse current IS,pulse - - 32.8
Diode forward voltage VSD
VGS=0 V, IF=-8.2 A,
Tj=25 °C - - 1.1 V
Reverse recovery time trr -2639ns
Reverse recovery charge Qrr -1421nC
4) See figure 16 for gate charge parameter definition
VR=10 V, IF=ID,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD= -10 V,
VGS=4.5 V, ID=8.2 A,
RG= 6 Ω
VDD=10 V, ID=-8.2 A,
VGS=0 to 4.5 V
Rev.1.31 page 3 2010-02-15
BSO203P H
1 Power dissipation 2 Drain current
Ptot=f(TA); tp≤10 s ID=f(TA); tp≤10 s
parameter: VGS
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C1); D=0 ZthJA=f(tp)1)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
100 ms
DC
102
101
100
10-1
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
10-5
10-6
102
101
100
10-1
10-2
tp [s]
ZthJA [K/W]
0
0.5
1
1.5
2
2.5
0 40 80 120 160
TA [°C]
Ptot [W]
4.5 V
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160
TA [°C]
-I D [A]
Rev.1.31 page 4 2010-02-15
BSO203P H
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5
-V GS [V]
-I D [A]
2.5 V
3.0 V
4.5 V
10 V
3.5V
10 V
0
5
10
15
20
25
30
35
40
45
50
0 102030405060
-I D [A]
RDS(on) [mΩ]
1.5V
2V
2.5V
3 V
4.5V
10 V
0
10
20
30
40
50
60
012345678910
-V DS [V]
-I D [A]
0
20
40
60
0 5 10 15 20 25 30 35 40
ID [A]
gfs [S]
25°C
150 °C
Rev.1.31 page 5 2010-02-15
BSO203P H
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-8.2 A; VGS= -4.5 V VGS(th)=f(Tj); VGS=VDS; ID= -100 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
5
10
15
20
25
30
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [mΩ]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-60 -20 20 60 100 140
Tj [°C]
-V GS(th) [V]
Ciss
Coss
Crss
104
103
102
0102030
-V DS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev.1.31 page 6 2010-02-15
BSO203P H
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=8.2 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
-60 -20 20 60 100 140 180
Tj [°C]
-V BR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
4 V 10V
16 V
0
1
2
3
4
5
6
7
8
9
10
0204060
-Q gate [nC]
VGS [V]
Rev.1.31 page 7 2010-02-15
BSO203P H
Package Outline
PG-DSO-8: Outline
Footprint
Dimensions in mm
Rev.1.31 page 8 2010-02-15
BSO203P H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev.1.31 page 9 2010-02-15
