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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Ordering Information
BiFET HBT
LDMOS
Pin 1
Indicator
RF OUT Ground
RF IN
Ground
1
9
6 5
7
84
32
NBB-502
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
The NBB-502 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and micro-
wave amplification needs. This 50 gain block is based on a reliable HBT
proprietary MMIC design, providing unsurpassed performance for small-
signal applications. Designed with an external bias resistor, the NBB-502
provides flexibility and stability. The NBB-502 is packaged in a low-cost,
surface-mount ceramic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements. It is available in either 1,000 or 3,000
piece-per-reel quantities.
Features
Reliable, Low-Cost HBT
Design
19.0dB Gain, +13.0dBm
P1dBat2GHz
High P1dB of
+14.0dBmat6.0GHz
Single Power Supply
Operation
50 I/O Matched for High
Frequency Use
Applications
Narrow and Broadband
Commercial and Military
Radio Designs
Linear and Saturated
Amplifiers
Gain Stage or Driver
Amplifiers for
MWRadio/Optical Designs
(PTP/PMP/
LMDS/UNII/VSAT/WiFi/
Cellular/DWDM)
NBB-502 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
NBB-502-T1 Tape and Reel, 1000 Pieces
NBB-502-E Fully Assembled Evaluation Board
NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit
DS120130
NBB-502Cas-
cadable
Broadband
GaAs MMIC
Amplifier DC to
4GHz
Package Style: MPGA, Bowtie, 3x3, Ceramic
2 of 8
NBB-502
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter Rating Unit
RF Input Power +20 dBm
Power Dissipation 300 mW
Device Current 70 mA
Channel Temperature 150 °C
Operating Temperature -45 to +85 °C
Storage Temperature -65 to +150 °C
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter Specification Unit Condition
Min. Typ. Max.
Overall VD=+3.9V, ICC=35mA, Z0=50, TA=+25°C
Small Signal Power Gain, S21 19.0 20.5 dB f=0.1GHz to 1.0GHz
19.0 dB f=1.0GHz to 2.0GHz
16.0 17.0 dB f=2.0GHz to 4.0GHz
Gain Flatness, GF ±0.8 dB f=1.0GHz to 3.0GHz
Input and Output VSWR 1.55:1 f=0.1GHz to 4.0GHz
1.50:1 f=4.0GHz to 6.0GHz
1.55:1 f=6.0GHz to 10.0GHz
Bandwidth, BW 4.2 GHz BW3 (3dB)
Output Power at
-1dB Compression, P1dB 13.0 dBm f=2.0GHz
14.0 dBm f=6.0GHz
Noise Figure, NF 4.0 dB f=3.0GHz
Third Order Intercept, IP3 +23.0 dBm f=2.0GHz
Reverse Isolation, S12 -17.0 dB f=0.1GHz to 10.0GHz
Device Voltage, VD 3.6 3.9 4.2 V
Gain Temperature Coefficient,
GT/T
-0.0015 dB/°C
MTTF versus Temperature
at ICC=35mA
Case Temperature 85 °C
Junction Temperature 109.4 °C
MTTF >1,000,000 hours
Thermal Resistance
JC 179 °C/W
JTTCASE
–
VDICC
---------------------------JC CWatt=
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended applica-
tion circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
3 of 8
NBB-502
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Package Drawing
Pin Function Description Interface Schematic
1GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2GND
Same as pin 1.
3GND
Same as pin 1.
4RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
5GND
Same as pin 1.
6GND
Same as pin 1.
7GND
Same as pin 1.
8RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
Care should also be taken in the resistor selection to ensure that the cur-
rent into the part never exceeds maximum datasheet operating current
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply near
5.0V is available, to provide DC feedback to prevent thermal runaway.
Alternatively, a constant current supply circuit may be implemented.
Because DC is present on this pin, a DC blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed.
9GND
Same as pin 1.
RVCC VDEVICE
–
ICC
-------------------------------------------=
RF OUT
RF IN
4 of 8
NBB-502
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Recommended PCB Layout
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Recommended Bias Resistor Values
Supply Voltage, VCC (V)5 8 10121520
Bias Resistor, RCC () 31 117 174 231 317 460
C block
4 8
1,2,3
5,6,7,9
C block
In Out
L choke
(optional)
RCC
VCC
VD = 3.9 V
VDEVICE
5 of 8
NBB-502
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Application Notes
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to
the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.
Wire Bonding
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable prac-
tices for wire bonding.
Assembly Procedure
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive sil-
ver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the
chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-
1LMI from Ablestik.
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool
kit contains the following.
• 5 each NBB-300, NBB-31 0 and NBB-400 Ceramic Micro-X Amplifier s
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluatio n Boards and High Frequency SMA Connectors
• Broadband Bias Instructions and Specification Summary Index for ease of operation
6 of 8
NBB-502
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Tape and Reel Dimensions
All Dimensions in Millimeters
A
D
B
F
T
O
S
330 mm (13") REEL Micro-X, MPGA
SYMBOL SIZE (mm)ITEMS SIZE (inches)
FLANGE B
T
F
330 +0.25/-4.0
18.4 MAX
12.4 +2.0
Diameter
Thickness
Space Between Flange
13.0 +0.079/-0.158
0.724 MAX
0.488 +0.08
HUB
O
S
A
102.0 REF
13.0 +0.5/-0.2
1.5 MIN
Outer Diameter
Spindle Hole Diameter
Key Slit Width D20.2 MINKey Slit Diameter
4.0 REF
0.512 +0.020 /-0.008
0.059 MIN
0.795 MIN
PIN 1
User Direction of Feed
Ao = 3.6 MM
Bo = 3.6 MM
Ko = 1.7 MM
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao an d Bo measure d on a plane 0.3 mm abov e the botto m of the poc ket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Poc ket pos i tion relat i ve to sp rocket ho l e measured as true position of pocket , not poc ket hole.
All di m ensions in mm
SECTI ON A-A
R0.3 MAX.
Ko
0.30 ± 0.05
5.50 ± 0.05
See Note 6 12.00
± 0.30
1.75
A
AR0.5 TY P
1.5 MIN.
Bo
Ao 8.0
2.00 ± 0.05
See Note 6
4.0
See Note 1 +0.1
-0.0
1.5
7 of 8
NBB-502
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss
variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S11 versus Frequency at +25°C
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 5.0 10.0
Fr equency (GHz)
S11 (dB)
S12 versus Frequency at +25°C
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 5.0 10.0
Fre quency (GHz)
S12 (dB)
S21 versus Frequency at +25°C
0.0
5.0
10.0
15.0
20.0
25.0
0.0 5.0 10.0
Fr eq uency (GHz)
S21 (dB)
S22 versus Frequency at +25°C
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 5.0 10.0 15.0 20.0
Fre quency (GHz)
S22 (dB)
8 of 8
NBB-502
DS120130
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Device Voltage versus Amplifier Current
3.85
3.90
3.95
4.00
20.00 25.00 30.00 35.00 40.00 45.00 50.00
Amplifier Current, ICC (mA)
Device Voltage, VD (V)
P1dB versus Frequency at 25°C
0.0
5.0
10.0
15.0
20.0
1.0 2.0 3.0 4.0 5.0 6.0
Fr equency (GHz)
P1dB (dBm)
POUT/Gain versus PIN at 2 GHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
POUT/Gain versus PIN at 6 GHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
Third Order Intercept versus Frequency at 25°C
0.0
5.0
10.0
15.0
20.0
25.0
30.0
1.0 2.0 3.0 4.0 5.0 6.0
Fre quency (GHz)
Output IP3 (dBm)