Thyristor Modules Thyristor/Diode Modules PSKT 220 PSKH 220 Preliminary Data Sheet ITRMS ITAVM VRRM = 2x 400 A = 2x 250 A = 800-1600 V 3 VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 2 Type 1 Version 1 Version 1 PSKT PSKT PSKT PSKT PSKH 220/08io1 PSKH 220/12io1 PSKH 220/14io1 PSKH 220/16io1 220/08io1 220/12io1 220/14io1 220/16io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85C; 180 sine ITSM, IFSM TVJ = 45C; VR = 0 i2dt (di/dt)cr Maximum Ratings 400 250 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8500 9000 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7000 7600 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 000 336 000 A 2s A 2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 245 000 240 000 A 2s A 2s 100 A/s TVJ = TVJM repetitive, IT = 750 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 1 A non repetitive, IT = 250 A diG/dt = 1 A/s (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM 1000 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 C C C 3000 3600 V~ V~ Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws 1 5 42 International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins Applications VRGM Md 3 V/s PGAV t = 1 min t=1s 5 4 2 Features W W W 50/60 Hz, RMS IISOL 1 mA tP = 30 s tP = 500 s A/s 6 7 1 PSKH 800 3 5 4 PSKT 120 60 20 VISOL 7 6 Advantages 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Symbol Test Conditions Characteristic Values IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 140C) VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; 70 40 mA mA 1.53 V 0.9 1.0 V m 2 3 150 200 V V mA mA VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s 200 mA IH TVJ = 25C; VD = 6 V; RGK = 150 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/s 2 s tq TVJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 50 V/s; VD = 2/3 VDRM 200 s QS IRM TVJ = 125C; IT, IF = 400 A, -di/dt = 50 A/s 760 275 C A RthJC per per per per 0.139 0.0695 0.179 0.0895 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s 2 RthJK TVJ TVJ TVJ TVJ = = = = 25C -40C 25C -40C thyristor/diode; DC current module thyristor/diode; DC current module Creepage distance on surface Strike distance through air Maximum allowable acceleration dS dA a other values see Fig. 8/9 typ. Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass PSKH 20 12 14 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3xPSKT 220 or 3xPSKH 220 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3xPSKT 220 or 3xPSKH 220 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 0.15 30 DC K/W RthJC for various conduction angles d: ZthJC 0.10 d RthJC (K/W) 0.05 DC 180C 120C 60C 30C 0.139 0.141 0.142 0.142 0.143 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 K/W 1 2 3 ti (s) 0.0099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 30 DC ZthJK RthJK for various conduction angles d: 0.15 0.10 0.05 d RthJK (K/W) DC 180C 120C 60C 30C 0.179 0.181 0.182 0.183 0.183 Constants for ZthJK calculation: i 0 0.00 10-3 Rthi (K/W) 0.0037 0.0177 0.1175 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.0037 0.0177 0.1175 0.04 0.0099 0.168 0.456 1.36 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/