FSS145
No. A0341-1/4
Features
•Load switching applications.
•Low ON-resistance.
•4V dri ve.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --45 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID-- 8 A
Drain Current (PW≤10s) IDDuty cycle≤1% --8.5 A
Drain Current (PW≤10µs) IDP Duty cycle≤1% --32 A
Allowable Power Dissipation PD
Mounted on a ceramic board (1200mm
2
✕0.8mm), PW≤10s
2.9 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --45 V
Zero-Gate Voltage Drain Current IDSS VDS=--45V, VGS=0V --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--8A 10 17 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=--8A, VGS=--10V 18 24 mΩ
RDS(on)2 ID=--4A, VGS=--4V 28 40 mΩ
Input Capacitance Ciss VDS=--20V, f=1MHz 3490 pF
Output Capacitance Coss VDS=--20V, f=1MHz 370 pF
Reverse T ransfer Capacitance Crss VDS=--20V, f=1MHz 290 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 35 ns
Rise Time trSee specified Test Circuit. 65 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 270 ns
Fall T ime tfSee specified Test Circuit. 125 ns
Marking : S145 Continued on next page.
Ordering number : ENA0341
80906 / 22006PA MS IM TB-00002039
FSS145 P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
FSS145
No. A0341-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=--24V, VGS=--10V, ID=--8A 63 nC
Gate-to-Source Charge Qgs VDS=--24V, VGS=--10V, ID=--8A 9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--24V, VGS=--10V, I D=--8A 12 nC
Diode Forward Voltage VSD IS=--8A, VGS=0V --0.81 --1.5 V
Package Dimensions Switching Time Test Circuit
unit : mm
7005-002
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --8A
RL=3Ω
VDD= --24V
VOUT
FSS145
VIN
0V
--10V
VIN
14
58
5.0
4.4
6.0 0.3
1.5
1.8 MAX
0.1
0.595 1.27
0.2
0.43
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Ta
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, VGS -- V
IT10745 IT10746
0
0
--3
--4
--5
--8
--6
--7
--2
--1
--1.0--0.2 --0.4 --0.6 --0.8
--10.0V
--
6.0V
--8.0V
0
0
--6
--8
--10
--12
--4
--2
--3.6--0.8 --1.2--0.4 --1.6 --2.0 --2.4 --2.8 --3.2
--3.0V
--3.3V
--2.8V
VGS= --2.5V
--25°C
25°
C
Ta=75
°C
VDS= --10V
--4.0
V
--
5.0V
IT10747 IT10748
--1
0--10--9--2 --3 --4 --5 --6 --7 --60 --40 --20 0 20 40 60 80 100 120 140 160
--8
80
70
40
20
60
50
30
10
0
50
20
60
40
30
10
ID=
--4
A, VGS=
--4.0
V
Ta=25°C
ID= --4A
--8A
ID=
--8
A, VGS=
--10.0
V
FSS145
No. A0341-3/4
0
100
1000
7
5
7
3
2
10000
7
5
3
2
--45--40--5 --20--15 --25--10 --30 --35
IT10752
IT10751
IT10750
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
--0.001
--0.01
--10
--1.0
7
5
3
2
--0.1
7
5
3
2
7
5
3
2
7
5
3
2
3
2
IT10749
25
°
C
--25°
C
f=1MHz
Ciss
Coss
Crss
Tc=75
°
C
--0.001 --0.01
23 57 23 57 23 57 23 2357
--0.1 --10--1.0
1.0
2
3
5
7
2
3
5
7
10
2
3
5
2
3
5
7
0.01
0.1
VDS=
--
10V
25
°
C
Tc= --25
°
C
75°
C
VGS=0V
100
10
3
2
5
7
3
2
5
7
--0.1 23 57 23 2357
--1.0 --10
VDD=
--
24V
VGS=
--
10V
td(off)
tf
td(on)
--10
2
3
5
7
2
3
5
7
2
3
5
7
--100
2
3
5
7
--1.0
--0.01
--0.1
223 5 5723 572357
--0.01 --0.1 --1.0 --10 7--100
3
IT10754IT10753
0
0
--1
--2
--3
--4
--5
--6
--7
--8
706030 504020
--10
--9
10
VDS= --24V
ID= --8A ≤10µs
Operation in this area
is limited by RDS(on).
1ms
10ms
10s
100ms
ID= --8A
IDP= --32A
DC operation
tr
0
IT10755
0
020 40
0.5
60
1.5
1.0
2.0
80 100 120
2.5
2.9
3.0
3.5
140 160
Ciss, Coss, Crss -- VDS
SW Time -- ID
IS -- VSD
y
fs-- ID
VGS -- Qg
PD -- Ta
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm
2
✕0.8mm)
Mounted on a ceramic board (1200mm
2
✕0.8mm), PW≤10s
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
A S O
FSS145
No. A0341-4/4
PS
Note on usage : Since the FSS145 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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