MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCU15CA-130
OUTLINE DRAWING Dimensions in mm
APPLICATION
Current source inverters, DC choppers, Induction heaters, DC to DC converter
Symmetrical GCT unit
GCT and gate driver are connected
ITQRM
Repetitive controllable on-state current
...... 1500A
IT(AV): Average on-state current ..................... 500A
VDRM: Repetitive peak off-state voltage ....... 6500V
VRRM: Repetitive peak reverse voltage ........ 6500V
Tj: Operation junction temperature ......... 125°C
37
1.6
13.7
20
120
LED4 : POWER SUPPLY OK (GREEN)
LED3 : G-K OK (GREEN)
LED2 : GATE ON (YELLOW)
LED1 : GATE OFF (RED)
A PART MAGNIFICATION
φ
3.5±
0.2
2.2±
0.2
DEPTH
FAULT SIGNAL OUTPUT
(HFBR-1521)
FIBER OPTIC
INPUT (HFBR-2521)
GATE TEST POINT
20V POWER SUPPLY INPUT
(MSTB2.5/2-G-5.08AU)
CATHODE TEST POINT
A
80
160
20MAX
120
170
2-3×M3
165
290
32.532.5
85
166.5
K
G
K
G
K
G
K
G
160160
208
140
104
54.5
54.5
80
5
37
20
9
10MIN
6
±0.5
6
±0.5
φ
3.5
±0.2
2.2
±0.2
DEPTH
6
±0.5
6
±0.5
6
±0.5
6
±0.5
φ
63
±0.2
26.2
±0.3
80
±0.5
14.5
±1.3
10.1
±0.9
LED3
LED4
LED1
LED2
TPG
TPK
OE1
OE2
K
G
K
G
φ
63
±0.2
ADDITIONAL SUPPORT
SHOULD BE ATTACHED
CAPTIV SCREW
(DEPTH OF THE SCREW INTO
THE HEATSINK : 6 ~ 8mm)
Mar. 2009
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Mar. 2009
2
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state
voltage
Turn-on time
Turn-on delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
3000
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
QRR
Erec
IGT
VGT
Unit
Symbol
VRRM
VRSM
VDRM
VDSM
V(LTDS)
Parameter
V
V
V
V
V
Voltage class
6500
6500
6500
6500
3600
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
GCT PART
MAXIMUM RATINGS
Conditions
Gate driver energized
Gate driver energized
Gate driver energized, λ = 100 Fit
8
2.7 × 105
1000
9
32
180
230
10
21
900
1500
Applied for all condition angles
f = 60Hz, sinewave θ = 180°, Tf = 66°C
VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH
Tj = 25/125°C(See Fig. 1, 3)
VD = 3000V, IT = 1500A, CS = 0.2µF, RS = 5
Tj = 25/125°C, f = 60Hz (See Fig. 1, 2)
IT = 1500A, VR = 3000V, Tj = 25/125°C
CS = 0.2µF, R S = 5(See Fig. 4, 5)
One half cycle at 60Hz, Tj = 125°C start
Ratings
780
500
A
A
kA
A2s
A/µs
kW
kW
W
W
V
V
A
A
Surge on-state current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
IT(RMS)
IT(AV)
ITSM
I2t
diR/dt
PFGM
PRGM
PFG(AV)
PRG(AV)
VFGM
VRGM
IFGM
IRGM
Symbol Parameter
RMS on-state current
Average on-state current
Conditions
ITQRM Repetitive controllable
on-state current 1500
Unit
A
diT/dtCritical rate of rise of on-state
current 1000 A/µs
V
mA
mA
mA
V/µs
µs
µs
J/P
µs
J/P
µ
C
J/P
A
V
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Limits
Min Typ Max Unit
6
300
150
100
5
1
1.3
3
5.2
2000
7.4
0.75
1.5
IT = 800A, Tj = 125°C
VRM = 6500V, Tj = 125°C
VDM = 6500V, Tj = 125°C, Gata driver energized
VRG = 21V, Tj = 125°C
VD = 3000V, Tj = 125°C
Gate driver energized (Expo. wave)
IT = 1500A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C
CS = 0.2µF, R S = 5(See Fig. 1, 2)
IT = 800A, VD = 3000V, di/dt = 1000A/µs
CS = 0.2µF, RS = 5Ω, Tj = 125°C(See Fig. 1, 2)
IT = 1500A, VDM = 3/4 VDRM, VD = 3000V
CS = 0.2µF, RS = 5, Tj = 125°C(See Fig. 1, 5)
IT = 800A, VDM = 4000V, VD = 3000V
CS = 0.2µF, RS = 5, Tj = 125°C(See Fig. 1, 5)
VR = 3000V, IT = 800A, di/dt = 1000A/µs
CS = 0.2µF, RS = 5, Tj = 125°C (See Fig. 4, 5)
VD = 24V, RL = 0.1, Tj = 25°C
DC method
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Mar. 2009
3
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Power supply voltage
Gate power consumption
Delay time of on gate current
Delay time of off gate current
Control signal
Power supply connector
Status signal
DC power supply
IT = 830Arms, f = 780Hz, duty = 0.33
Ta = 25°C
Ta = 25°C
Optical fiber data link
Transmitter : HFBR-1521 : Agilent
Receiver : HFBR-2521 : Agilent
Phoenix contact
Type name : MSTB2.5/2-G-5.08AU
VGIN
PGIN
tfd
trd
19
V
W
µs
µs
GATE DRIVER PART
Symbol Parameter Conditions Limits
Min Typ Max Unit
20
21
50
3.0
3.0
(Note 1)
Mounting force
Weight
Pole piece diameter (GTC device)
Housing thickness (GTC device)
±0.2mm
±0.5mm
FM
kN
g
mm
mm
Symbol Parameter Conditions Limits
Min
18
Typ
20
1560
63
26
Max
24
Unit
MECHANICAL DATA
Junction operating temperature
Storage temperature
Ambient operation temperature
Thermal resistance
Recommend : 40°C
Junction to Fin
Tj
Tstg
Ta
Rt(j-f)
°C
°C
°C
K/W
Symbol Parameter Conditions Limits
Min
–10
–10
–10
Typ
Max
125
60
60
0.014
Unit
THERMAL DATA
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Mar. 2009
4
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Fig. 1 Turn-on and Turn-off waveform
Fig. 2 Turn-on test circuit Fig. 3 Turn-off test circuit
(With clamp circuit)
Fig. 5 Turn-off and Reverse recovery test circuit
Fig. 4 Reverse recovery waveform
td ; 0VRG ~ 0.9VD
tgt ; 0VRG ~ 0.1VD
ts ; 0VRG ~ 0.9IT
diG/dt ; 0.1IGM ~ 0.9IGM
tw ; 0VRG ~ 0.9IGM
diGQ/dt ; 0.1IRG ~ 0.9IRG
tfd ; 50% on signal ~ 0VRG
trd ; 50% off signal ~ 0VRG
Integration area for Eoff ; 5%VD ~ until 100µs
VD
VRG
IGM
ts
VRG
ITVD
diGQ/dt
diG/dt
IGQ
IG
tgt
td
tfd trd
Control signal
tw
t(Eoff) = 100µs
DUT
L
V
D
Rs
Cs
Rc
L (load) FWDi
DUT CDi
Cc
V
D
Lc
ANL
0
90%I
RM
V
RM
t
rr
I
T
50%I
RM
V
R
Q
RR
= (t
rr
×I
RM
)/2
Integration area for E
rec
; 0I
T
~ until 100µs
[]
d
i
/d
t
(0 ~ 50%I
RM
)
t(E
rec
) = 100µs
50%I
T
Cs
Cs
L (Ioad)
DUT
DUT
VD
Rs
Rs
ANL
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Mar. 2009
5
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Note 1. Status signal
1. Status signal from LED
(1) Status signal
Status of GCT
On state
Off state
LED 1
(Red)
LED 2
(Yellow)
OFF
ON
ON
OFF
20±1V
Voltage down
20±1V
Voltage down
Normal
Normal
G-K short
G-K short
Normal
Fault
Fault
Fault
PS LED (LED 4)
(Green)
G-K LED (LED 3)
(Green)
(2) Fault signal
Status G-K Power Supply
On
Off
Off
Off
2. Status signal from Transmitter (L : Light NL : No light)
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
NL
L
L
L
NL
NL
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
L
Normal
Fault
L
NL
L
L
NL
NL
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
L
NL
Normal Fault
L
NL
L
NL
(Always No light)
(Always light)
L
L
NL
NL
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
(1) Normal operation
(3) Fault signal (G-K short)
(2) Fault signal (O/V or U/V)
(4) Fault signal (fiber optic)
On
Off
On
Off
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Mar. 2009
6
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Note 2. Additional support for vibration test
Additional support is necessary for vibration test of GCU15CA-130.
Fig. 6 shows detailed figure about connection method between gate driver and heat sink by additional support.
120
151.5
3.5
71.5
75
60
M4×0.7 SCREW 8 DEPTH
Heat sink
Gate driver
DE1
LED1
LED2
LED3
LED4
TPK
TPG
DE2
Additional support
HEAT SINK
Fig. 6 Connection method between gate driver and heat sink by additional support
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Mar. 2009
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MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
ON-STATE CURRENT IT (A)
ON-STATE VOLTAGE VTM (V)
TURN ON SWITCHING ENERGY Eon (J/P)
TURN ON CURRENT IT (A)
Eon VS IT (Max)
TURN OFF SWITCHING ENERGY Eoff (J/P)
TURN OFF CURRENT IT (A)
Eoff VS IT (Max)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
Zth (K/W)
TIME (S)
REVERSE RECOVERY ENERGY Erec (J/P)
ON-STATE CURRENT IT (A)
Erec VS IT (Max)
0.000
0.016
0.018
0.020
0.012
0.014
0.006
0.008
0.010
0.002
0.004
5
3
100123456 89710
2
7
5
3
2
7
5
3
2
7
0
0
12
10
14
8
6
4
2
200 400 600 800 1000 1200 1400 1600 1800
2.5
18000
2.0
1.5
1.0
0.5
0.0
1600140012001000800600400200
10
4
10
2
10
3
CONDITION
VD=3000V, Tj=125°C
di/dt=1000A/µs
Cs=0.2µF, Rs=5
16
14
0
0
12
10
8
6
4
2
200 400 600 800 1000 1200 1400 1600 1800
Tj=125°C
Tj=25°C
CONDITION
VD=3000V, VDM=VD+1.25× IT
Tj=125°C, Cs=0.2µF
Rs=5
CONDITION
VR=3000V, Tj=125°C
di/dt=1000A/µs
Cs=0.2µF, Rs=5
0
10–2 10–1
2357
100
2357
101
2357
10–3
2357
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