Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6508
1N6508
DESCRIPTION APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctio ns fabricated
by a planar process and moun ted in a 14-PIN ceramic DIP package for use as steering
diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the
positive side of the power supply line and to ground (see Figure 1). An external TVS
diode may be added b etween the positive supp ly line and ground to prevent over-
voltage on the supply rail. They may also be used in fast switching core-dr iver
applications. This includes co mputers and peripheral equipment such as magnetic
cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arra ys offer many advantages of integrated circuits such as high-
density packaging and improved reliability. This is a result of fewer pick and place
operations, smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting.
14-PIN Ceramic DIP
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFI TS
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage VBR > 60 V at 10 μA
• Low Leakage I R< 100nA at 40 V
• Low Capacitance C < 8.0 pF
• Switching Speeds less than 20 ns
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6508 for a JANTX screen.
• High Frequency Data Lines
• RS-232 & RS-422 Interface Net works
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figur e 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Reverse Breakdo wn Voltage of 60 Vdc (Note 1 & 2)
• Continuous For ward Current of 300 mA dc (Note 1 & 3)
• Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
• 400 mW Power Dissipation per Junction @ 25oC
• 600 mW Power Dissipation per Package @ 25oC (Note 4)
• Operating Junction Temperature range –65 to +150oC
• Storage Temperature range of –65 to +200oC
• 14-PIN Ceramic DIP
• Weight 2.05 grams (approximate)
• Marking: Logo, part number, date code
• Pin #1 to the left of the indent on top of package
• Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.8 mW/oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
FORWARD
VOLTAGE
VF2
IF = 500 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY TIME
tfr
IF = 500 mA
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 200 mA
irr = 20 mA
RL = 100 ohms
PART
NUMBER V V μA pF ns ns
1N6508 1 1.7 0.1 8.0 40 20
NOTE 1: Pulsed: PW = 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Microsemi
Scottsdale Division Page 1
Copyright © 2005
6-9-2005 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6508
1N6508
SYMBOLS & DEFINITI ONS
Symbol DEFINITION
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VFMaximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IRMaximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Ct Capacitance: The capacitance of the T VS as defined @ 0 vo lts at a frequency of 1 MHz and stated in
picofarads.
SCHEMATIC PACKAGE DIMEN SIONS
CIRCUIT
Supply rail (+VCC)
GND (or -VCC)
Steering Diode Application
FIGURE 1
I/O Port
Microsemi
Scottsdale Division Page 2
Copyright © 2005
6-9-2005 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
