SD5000 / SD5001 / SD5002
SD5400 / SD5401 / SD5402
DC ELECTRICAL CHARACTERISTICS TA = 25 oC
SYMBOL PARAMETERS SD5000/SD5400 SD5001/SD5401 SD5002/SD5402 UNITS CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Vanalog Analog Signal Range -10 +10 -5 +5 -7.5 +7.5 V
Breakdown Voltage
BVDS
BVSD
BVDB
BVSB
Drain-Source
Source-Drain
Drain-Body
Source-Body
20
20
25
25
25 10
10
15
15
25 15
15
22.5
22.5
25
V
VGS = VBS = -5V, ID = 10nA
VGD = VBD = -5V, IS = 10nA
VGB = 0 V, ID = 10nA Source Open
VGB = 0 V, IS = 10µA, Drain Open
Leakag e Curre nt - SD50 00/SD5 40 0
IDS(OFF)
ISD(OFF)
IGBS
Drain-Source
Source-Drain
Gate
1.0
1.0 10.0
10.0
1.0
nA
nA
µA
VGS = VBS = -5V, VDS = 20V
VGD = VBD = -5V, VSD = 20V
VDB = VSB = 0V, VGB = 30V
Leakag e Curre nt - SD50 01/SD5 40 1
IDS(OFF)
ISD(OFF)
IGBS
Drain-Source
Source-Drain
Gate
1.0
1.0 10.0
10.0
1.0
nA
nA
µA
VGS = VBS = -5V, VDS = 10V
VGD = VBD = -5V, VSD = 10V
VDB = VSB = 0V, VGB = 25V
Leakag e Curre nt - SD50 02/SD5 40 2
IDS(OFF)
ISD(OFF)
IGBS
Drain-Source
Source-Drain
Gate
1.0
1.0 10.0
10.0
1.0
nA
nA
µA
VGS = VBS = -5V, VDS = 15V
VGD = VBD = -5V, VSD = 15V
VDB = VSB = 0V, VGB = 30V
VTThreshold Voltage 0.1 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V VDS = VGS = VT, VSB = 0V, ID = 1µA
RDS(ON) Drain-Source O N
Resistance
50
30
23
19
70 50
30
23
19
70 50
30
23
19
70
Ω
VGS = 5 V, VSB = 0V, ID = 1 mA
VGS = 10V, VSB = 0V, ID = 1mA
VGS = 15V, VSB = 0V, ID = 1mA
VGS = 20V, VSB = 0V, ID = 1mA
RDS(ON) Match ON Resiatance 1 5 1 5 1 5 ΩVGS = 5 V
AC ELECTRICAL CHARACTERISTICS TA = 25oC
SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS
gfs Forward Transconductance 10 12 mS VDS = 10V, ID = 20 mA, VSB = 0V, f = 1kHz
Capacitances
CG
CD
CS
CDG
Gate Node
Drain Node
Source Node
Reverse Transfer
2.4
1.3
3.5
0.3
3.5
1.5
4.0
0.5
pF VDS = 10V, f = 1 MHz, VGS = VBS = -15V
CTCross talk 107.0 dB f = 3kHz, RG = 600Ω
CALOG IC CO RP OR ATION, 237 Whitney Place, Fr emont , California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
CORPORATION
SWIT CHING CHARACTERI STICS TA = 25oC
SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS
td(ON) Turn-On Time 0.7 1.0
nsec RL = 680Ω, R G = 5 1
VDD = 5V
VG(ON) = 10V
trRise Time 0.8 1.0
tOFF* Turn-Off Time 10.0
*tOFF is d ep ende nt on RL and C and doe s not depen d on the d evice characteri stics.