IGBT IPM R-series 1200V class 1200V / 25A 7 in one-package
7MBP25RJ120
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs.
· Low power loss and soft switching.
· High performance and high reliability IGBT with overheating protection.
· Both P-side and N-side alarm output available.
· Higher reliability because of a big decrease in number of parts in
built-in control circuit.
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol Rating Unit
Min. Max.
Bus voltage DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current DC
1ms
DC
Collector power dissipation One transistor *3
Collector current DC
1ms
Forward Current of Diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque Terminal (M5)
Mounting (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Viso
Item
0
0
200
0
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
900
1000
800
1200
25
50
25
198
15
30
15
120
20
Vcc+0.5
3
Vcc
20
150
100
125
AC2500
3.5
3.5
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
V
N·m
N·m
Inverter
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB.
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/1.04=120W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
Brake
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7MBP25RJ120 IGBT-IPM
Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Limiting Resistor for Alarm
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Iccp
ICCN
Vin(th)
VZ
tALM
RALM
-
-
1.00
1.25
-
1.1
-
-
1425
-
-
1.35
1.60
8.0
-
2.0
-
1500
18
65
1.70
1.95
-
-
-
4.0
1575
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Turn-on time
Turn-off time
Reverse recovery time
ton VDC=600V,Tj=125°C
toff IC=25A Fig.1, Fig.6
trr VDC=600V, IF=25A Fig.1, Fig.6
Thermal characteristics( Tc=25°C)
Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance *8
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
- - 0.63
- - 1.33
- - 1.04
- 0.05 -
°C/W
°C/W
°C/W
Inverter IGBT
FWD
Brake IGBT
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
VDC
VCC
-
Recommendable value
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Over Heating Protection
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
VCE=1200V Vin terminal open.
Ic=25A
-Ic=25A
VCE=1200V Vin terminal open.
Ic=15A Terminal
-Ic=15A Terminal
Terminal
Chip
Terminal
Chip
IOC
IOC
tDOC
tSC
TjOH
TjH
TcOH
TcH
VUV
VH
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
VDC=0V, IC=0A
CaseTemperature
38 - -
23 - -
-10-
--12
150 -
-20 -
1 10 - 125
-20 -
11.0 - 12.5
0.2 0.5 -
A
A
µs
µs
°C
°C
°C
°C
V
V
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Common mode rectangular noise
Common mode lightning surge
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0 - -
±5.0 - -
Item Symbol Condition Min. Typ. Max. Unit
Item Condition Min. Typ. Max. Unit
kV
kV
- - 800 V
13.5 15.0 16.5 V
2.5 - 3.0 Nm
Item Symbol Min. Typ. Max. Unit
Weight
Weight Wt - 450 - g
Inverter
- - 1.0 mA
- - 2.6 V
- 2.0 -
- - 3.0 V
- 2.4 -
- - 1.0 mA
- - 2.6 V
- - 3.3
0.3 - - µs
- - 3.6
- - 0.3
*8 : (For 1 device, Case is under the device)
Brake
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7MBP25RJ120 IGBT-IPM
Figure 1. Switching Time Waveform Definitions
Figure 2. Input/Output Timing Diagram
Figure.4 Definition of tsc
Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit
Figure 6. Switching Characteristics Test Circuit
Ic Ic
IALM
tsc
IALM IALM
Ic
Ic Ic
IALM
tsc
IALM IALM
Ic
/Vin
Vge (Inside IPM )
Faul t (I nsi de IP M )
/ALM
Gate Off
on
Gate On
2ms (typ.)
off
normal
tALMMax. tALM > Max.
off
Faul t : Over-c urrent,Over -heat or Under-volt age
on
alarm
tALM > 123
/Vin
Vge (Inside IPM )
Faul t (I nsi de IP M )
/ALM
Gate Off
on
Gate On
2ms (typ.)
off
normal
tALMMax. tALM > Max.
off
Faul t : Over-c urrent,Over -heat or Under-volt age
on
alarm
tALM > 123
On
ton
Vin
Ic
Vin(th)
Vin(th)
50%
toff
10%
trr 90%
90%
On
ton
Vin
Ic
Vin(th)
Vin(th)
50%
toff
10%
trr 90%
90%
Vin
DC
15V
DC
300V
N
+
L
IPM
Ic
P
HCPL-
4504
Vcc
GND N
+
IPM
P
-
20k
Vin
DC
15V
DC
300V
N
+
L
IPM
Ic
P
HCPL-
4504
Vcc
GND N
+
IPM
P
-
20k
AVcc
Vin
GND
Icc P
U
V
W
N
P.G
+8V
fsw
IPM
DC
15V
AVcc
Vin
GND
Icc P
U
V
W
N
P.G
+8V
fsw
IPM
DC
15V
VccU
DC
15V
+
IPM
P
U
V
W
N
20k VinU
GNDU
SW1
Vcc
DC
15V
20k VinX
GND
SW2
Cooling
Fin
Earth
AC200V
4700p Noise
CT
VccU
DC
15V
+
IPM
P
U
V
W
N
20k VinU
GNDU
SW1
Vcc
DC
15V
20k VinX
GND
SW2
Cooling
Fin
Earth
AC200V
4700p Noise
CT
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7MBP25RJ120 IGBT-IPM
Block diagram
Outline drawings, mm
Mass : 450g
Pre-drivers include following functions
1.Amplifier for driver
2.Short circuit protection
3.Under voltage lockout circuit
4.Over current protection
5.IGBT chip over heating protection
1
12.5
31
22 9
717
1.0
52.02.02.02.0
51.051.0
3.0
1
3.0
66.44
2
1210
6
10
6
10
6
6.0+
3.0-
0.1+
3.0-
17
0.1+
2.0-
5M-6
0.1+
3.0-
3.0
3.0
1
51.0
3.0
22
8
0.5 262624
0.5
2
10
17 20 20
74
88
3.22
13.8
95
109
B
U
V
W
N
P
4- 5
19- 0.5 2- 2.5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
O
/
O
/
U
V
W
Vcc
VinX
GND
VinY
VinZ
ALM
B
N
VinDB
VccW
ALMW
GNDW
VccV
ALMV
GNDV
P
VccU
ALMU
GNDU
VinU
VinV
VinW
Pre-Driver
Pre-Driver
Pre- Driver
Pre- Driver
Pre- Driver
Pre- Driver
Pre-Driver
Vz
RALM 1.5k
RALM 1.5k Vz
RALM 1.5k Vz
Vz
Vz
Vz
Vz
RALM1.5k
Over heating protection
circuit
4
12
3
2
1
8
7
6
5
11
10
9
14
16
13
17
18
15
19
U
V
W
Vcc
VinX
GND
VinY
VinZ
ALM
B
N
VinDB
VccW
ALMW
GNDW
VccV
ALMV
GNDV
P
VccU
ALMU
GNDU
VinU
VinV
VinW
Pre-Driver
Pre-Driver
Pre- Driver
Pre- Driver
Pre- Driver
Pre- Driver
Pre-Driver
Vz
RALM 1.5k
RALM 1.5k Vz
RALM 1.5k Vz
Vz
Vz
Vz
Vz
RALM1.5k
Over heating protection
circuit
44
1212
33
22
11
88
77
66
55
1111
1010
99
1414
1616
1313
1717
1818
1515
1919
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IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
7MBP25RJ120
0
5
10
15
20
25
30
0 5 10 15 20 25
P o w e r s upply c u r r ent vs . Sw it ch i ng f re q uency
Tj=100°C
Vcc=13V
Vcc=13V
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
N-side
P-side
Powe r supply current : Icc (mA)
Switc hing fr eque nc y : fsw ( kH z)
0
0.5
1
1.5
2
2.5
12 13 14 15 16 17 18
Input signal threshold vo ltage
vs. Pow er supply voltage
Input s ignal thres hold voltage
Power supply voltage : Vcc (V)
Tj=25°C
Tj=125°C
} Vin(on)
} Vin(off)
: Vin(on),Vin(off) (V)
0
2
4
6
8
10
12
14
20 40 60 80 100 120 140
Under voltage vs. Junction temperature
Under voltag e : VUV T (V)
Junction temperature : Tj (°C)
0
0.2
0.4
0.6
0.8
1
20 40 60 80 100 120 140
Under v oltage hys terisis vs. Jnc tion temperature
Under voltage hy sterisis : V H (V)
Junc tion temperature : Tj (°C)
0
0.5
1
1.5
2
2.5
3
12 13 14 15 16 17 18
Alarm hold time vs. Power supply voltage
Alarm hold time : tALM (mSec)
Power supply voltage : Vcc (V)
Tj=125°C
Tj=25°C
0
50
100
150
200
12 13 14 15 16 17 18
Over heating characteristics
TcO H,TjO H ,TcH,TjH vs. Vcc
O ver heating protection : T cO H,TjOH (°C)
Power supply voltage : Vcc (V)
TjOH
TcOH
TcH,TjH
OH hysterisis : TcH,TjH (°C)
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7MBP25RJ120 IGBT-IPM
Main circuit characteristics (Respresentative)
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitte r voltage
Tj=25°C ( Chip)
Vcc=13V
Vcc=15V
Vcc=17V
Co llector Cur rent : Ic (A)
C olle ctor- Emitt er volta ge : V ce (V)
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitte r voltage
Tj=25°C ( Terminal)
Vcc=13V
Vcc=15V
Vcc=17V
Co llector Cur rent : Ic (A)
C olle ctor- Emitt er volta ge : V ce (V)
0
5
10
15
20
25
30
35
40
00.511.522.53
Collector cu rrent vs. Collector-Emitter voltage
Tj=125°C (Chip)
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : I c (A)
C olle ct or- Em itt er vo lta ge : V ce ( V)
0
5
10
15
20
25
30
35
40
00.511.522.53
Collector cu rrent vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : I c (A)
C olle ct or- Em itt er vo lta ge : V ce ( V)
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
Fo rwa rd cu rre nt vs . Fo rwar d vo ltage
(Chip)
125°C
25°C
F orw ard Current : If (A)
Forward voltage : Vf (V)
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
Fo rwa rd cu rre nt vs . Fo rwar d vo ltage
(Terminal)
125°C 25°C
Forward Current : If (A)
Forward voltage : Vf (V)
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7MBP25RJ120 IGBT-IPM
0.01
0.1
1
10
0.001 0.01 0.1 1
Transient thermal resis tance
Therm al resis tance : Rt h(j-c) (°C/W)
Pulse width :Pw (sec)
FWD
IGBT
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160
Power de rating for IGBT
(per device)
Colle c ter Power D issipat ion : P c ( W )
Case Temperature : Tc (°C)
0
20
40
60
80
100
0 20 40 60 80 100 120 140 160
Power derating for FWD
(per dev ice)
Co llecte r P ow er Diss ipatio n : Pc (W )
Case Tem perature : Tc (°C)
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35 40
Switchin g Loss vs. Collector Curren t
Edc=600V,Vcc=15V,Tj=25°C
Eon
Eoff
Err
Swit ch ing lo ss : E o n,Eoff , E r r ( m J /cycle)
Colle ctor current : Ic (A)
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35 40
S witching Loss v s . Co lle c tor Cur rent
Edc=600V,Vcc=15V,Tj=125°C
Eon
Eoff
Err
Sw itching loss : Eon,Eoff,Err (mJ /cycle)
Colle ctor current : Ic (A)
0
50
100
150
200
250
300
350
0 200 400 600 800 1000 1200 1400
Reversed bias ed safe operating area
Vcc=15V, Tj 125 °C
Collecto r c urrent : Ic (A)
Coll e ct or -Emitte r vol ta g e : Vc e (V )
SCSOA
( no n-re peti tive pu ls e)
RBSOA
(Re peti tive pulse)
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7MBP25RJ120 IGBT-IPM
0
20
40
60
80
100
0 20 40 60 80 100 120 140
Over current protect ion v s. Ju nction temperat ure
Vcc=15V
Over current protection level : Ioc(A)
J unctio n tem pera tur e : T j(°C )
1
10
100
1000
0 5 10 15 20 25 30 35 40
R e ve r s e recovery c h ara c teri stics
tr r,Irr v s. IF
Reve rse recovery curre nt : Irr(A)
Reve rse re co very tim e : trr(nSe c)
For w ard current : IF(A)
trr125°C
trr25°C
Irr125°C
Irr25°C
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Switching time vs. Colle ctor current
Edc=600V,Vcc=15V,Tj=25°C
Sw it ching tim e : ton, toff,tf (nSec)
C ollec tor curre nt : Ic (A)
toff
ton
tf
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Switching time vs. Colle ctor current
Edc=600V,Vcc=15V,Tj=125°C
Sw itching tim e : ton,toff,tf (nSec)
Collector current : Ic (A)
toff
ton
tf
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7MBP25RJ120 IGBT-IPM
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3
Collector curre nt vs. Collector-Em i tter voltage
Tj=25°C
Co llector Cur rent : Ic (A)
Coll e c t or- Em itt er voltage : Vc e ( V )
Vcc=13V
Vcc=15V
Vcc=17V
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3
Collector cu rrent vs. Colle ctor-Emi tter v oltage
Tj=125°C
Collector Current : Ic (A)
C ollector-E mit ter vo lta ge : V ce (V)
Vcc=13V
Vcc=15V
Vcc=17V
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
Power de rati n g for IGBT
(per dev ice)
Collecter Power D issipat ion : Pc ( W)
Ca se Tem pe rature : Tc (°C)
0
10
20
30
40
50
60
0 20 40 60 80 100 120 140
Over current protect ion v s. Ju nction temperat ure
Vcc=15V
Over curre nt protection level : Ioc(A)
Junction temperature : Tj(°C)
Dynamic Brake Characteristics (Representative)
0.01
0.1
1
10
0.001 0.01 0.1 1
Tran sient therm al resista nce
T he rm al resistance : Rth(j-c) (°C/W )
Pulse wid th :Pw (s e c )
IGBT
0
30
60
90
120
150
180
210
0 200 400 600 800 1000 1200 1400
Reversed biased safe oper ating area
Vcc=15V ,T j 125°C
C o l lector cu rrent : Ic (A)
C o llect or-E m itte r volta ge : V ce (V)
SCSOA
(no n- re p etit ive pu lse)
RBSOA
( Re peti tive pu ls e)
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