7MBR10SA120 IGBT Modules
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Brake Inverter
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
1200
±20
15
10
30
20
10
75
1200
±20
15
10
30
20
75
1200
1600
10
105
55
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT MODULE (S series)
1200V / 10A / PIM
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
tr(i)
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=10mA
VGE=15V, Ic=10A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=10A
VGE=±15V
RG=120Ω
IF=10A chip
terminal
IF=10A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=10A, VGE=15V chip
terminal
VCC=600V
IC=10A
VGE=±15V
RG=120 Ω
VR=1200V
IF=10A chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
1.0
0.2
8.5
2.6
1.2
0.6
1.0
0.3
3.2
0.35
1.0
0.2
2.6
1.2
0.6
1.0
0.3
1.0
1.5
1.0
1200
5.5 7.2
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
1.67
2.78
1.67 °C/W
1.85
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Modules 7MBR10SA120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
2.1
2.15
0.35
0.25
0.1
0.45
0.08
2.3
2.35
2.1
2.2
0.35
0.25
0.45
0.08
1.1
1.2
5000
465 495 520
3305 3375 3450
[Converter] 21(P)
23(N)
1(R) 2(S) 3(T)
[Brake] [Inverter]
22(P1)
7(B)
14(Gb)
24(N1)
20(Gu)
19(Eu)
13(Gx)
18(Gv)
17(Ev)
4(U)
12(Gy)
5(V) 6(W)
16(Gw)
11(Gz) 10(En)
15(Ew)
89
[Thermistor]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Modules 7MBR10SA120
Characteristics (Representative)
012345
0
5
10
15
20
25
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25oC (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
5
10
15
20
25
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
012345
0
5
10
15
20
25
Tj= 25oCTj= 125oC
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 5A
Ic= 10A
Ic= 20A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
50
100
500
1000
5000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 20406080100
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=10A, Tj= 25 oC
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Modules 7MBR10SA120
0 5 10 15 20
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0 5 10 15 20
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
50 100 500 1000 2000
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Gate resistance : Rg [ Ω ]
Switching time : ton, tr, toff, tf [ nsec ]
0 5 10 15 20
0
1
2
3
Err(25oC)
Eoff(25 oC)
Eon(25 oC)
Err(125 oC)
Eoff(125 oC)
Eon(125 oC)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
50 100 500 1000 2000
0
2
4
6
8
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 1400
0
5
10
15
20
25
[ Inverter ]
Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Vcc=600V, VGE=±15V, Rg=120Ω, Tj=25°C Vcc=600V, VGE=±15V, Rg=120Ω, Tj=125°C
Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C Vcc=600V, VGE=±15V, Rg=120Ω
Vcc=600V, Ic=10A, VGE=±15V, Tj=125°C +VGE=15V , -VGE<15V, Rg>120Ω, Tj<125°C
== =
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Modules 7MBR10SA120
01234
0
5
10
15
20
25
Tj=25 oCTj=125 oC
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0 5 10 15 20
1
10
50
100
300
Irr(125 oC)
Irr(25oC)
trr(25 oC)
trr(125 oC)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=120 Ω
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0 0.4 0.8 1.2 1.6 2.0
0
5
10
15
20
25
Tj= 25 oCTj= 125 oC
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VFM [ V ]
Forward current : IF [ A ]
0.001 0.01 0.1 1
0.1
1
10
IGBT
[Inverter,Brake]
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ oC/W ]
Pulse width : Pw [ sec ]
FWD[Inverter]
Conv. Diode
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [ oC ]
Resistance : R [ kΩ ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Modules 7MBR10SA120
012345
0
5
10
15
20
25
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25oC (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
5
10
15
20
25
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
012345
0
5
10
15
20
25
Tj= 25oCTj= 125oC
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
510152025
0
2
4
6
8
10
Ic= 5A
Ic= 10A
Ic= 20A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
50
100
500
1000
5000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 20406080100
0
200
400
600
800
1000
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=10A, Tj= 25 oC
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Modules 7MBR10SA120
Outline Drawings, mm
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
