HMC939A v02.0119 Typical Applications Features The HMC939A is ideal for: 1.0 dB LSB Steps to 31 dB * Fiber Optics & Broadband Telecom Single Positive Control Line Per Bit * Microwave Radio & VSAT 1.0 dB Typical Bit Error * Military Radios, Radar & ECM High Input IP3: +43 dBm * Space Applications Die Size: 2.34 x 1.0 x 0.1 mm Functional Diagram General Description 1 5 P1 6 P2 7 P3 P4 VDD 10 RF2 RF1 The HMC939A die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering 0.1 to 40 GHz, the insertion loss is less than 5 dB typical. The attenuator bit values are 1.0 (LSB), 2, 4, 8, 16 for a total attenuation of 31 dB. Attenuation accuracy is excellent at less than 1.0 dB typical step error with an IIP3 of +43 dBm. Five control voltage inputs, toggled between +5V and 0V, are used to select each attenuation state. 8 16dB 4 P0 8dB 11 3 4dB VSS 2dB 2 1dB Attenuators - Digital - Chip 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz 9 Electrical Specifications, TA = +25 C, With Vdd = +5V, Vss = -5V & VCTL = 0/ +5V Parameter Frequency (GHz) Min. Max. Units 5.0 7.8 dB dB Insertion Loss 0.1 - 18 GHz 18 - 40 GHz 4.3 7.0 Attenuation Range 0.1 - 40 GHz 31 dB Return Loss (RF1, All Atten. States) (RF2, All Atten. States) 0.1 - 40 GHz 0.1 - 40 GHz 10 12 dB Attenuation Accuracy: (Referenced to Insertion Loss) All States 0.1 - 15 dB 16 - 31 dB 0.1 - 20 GHz 20 - 40 GHz 20 - 40GHz 0.5 + 3% of Atten. Setting Max 0.5 + 5% of Atten. Setting Max 0.6 + 6% of Atten. Setting Max dB dB dB Input Power for 0.1 dB Compression 0.1 - 0.5 GHz 0.5 - 40.0 GHz 21 24 dBm dBm Input Third Order Intercept Point (Two-Tone Input Power= 8 dBm Each Tone) 0.1 - 0.5 GHz 0.5 - 40.0 GHz 43 40 dBm dBm 50 70 ns ns Switching Characteristics 0.1 - 40 GHz tRISE, tFALL (10/90% RF) tON/tOFF (50% CTL to 10/90% RF) 1 Typ. Idd 0.1 - 40 GHz 3 5 7 mA Iss 0.1 - 40 GHz -4 -6 -8 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC939A v02.0119 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Normalized Attenuation Insertion Loss vs. Temperature (Only Major States are Shown) INSERTION LOSS (dB) -1 -2 -3 -4 -5 -6 -7 -8 0 -5 -10 -15 -20 -25 -30 -35 -40 -9 0 5 10 15 20 25 30 35 40 45 0 50 5 10 15 20 25 30 35 FREQUENCY (GHz) 40 45 50 FREQUENCY (GHz) +25 C +85 C I.L 1 dB 2 dB -55 C Input Return Loss (Only Major States are Shown) 0 0 -10 -10 RETURN LOSS (dB) RETURN LOSS (dB) 31 dB Output Return Loss (Only Major States are Shown) -20 -30 -40 -20 -30 -40 -50 0 5 10 15 IL 1 dB 2 dB 20 25 30 35 FREQUENCY (GHz) 40 4 dB 8 dB 16 dB 45 -50 50 0 BIT ERROR (dB) 0.8 0.4 0 -0.4 -0.8 -1.2 -1.6 -2 12 16 20 24 ATTENUATION STATE (dB) 1.0 GHz 10 GHz 20 GHz 30 GHz 20 25 30 35 FREQUENCY (GHz) 40 4dB 8 dB 16 dB 45 50 31 dB (Only Major States are Shown) 1.2 8 15 Bit Error vs. Frequency 1.6 4 10 IL 1 dB 2 dB 2 0 5 31 dB Bit Error vs. Attenuation State BIT ERROR (dB) 4 dB 8 dB 16 dB Attenuators - Digital - Chip NORMALIZED ATTENUATION (dB) 0 28 32 40 GHz 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 0 5 10 I.L 1 dB 2dB 15 20 25 30 35 FREQUENCY (GHz) 4dB 8 dB 16 dB 40 45 50 31 dB For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC939A v02.0119 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Relative Phase vs. Frequency Step Attenuation vs. Attenuation State 2.4 STEP ATTENUATION (dB) RELATIVE PHASE (deg) 200 180 160 140 120 100 80 60 40 20 0 -20 0 5 10 15 20 25 30 35 FREQUENCY (GHz) I.L 1 dB 2 dB 4 dB 8 dB 16 dB 40 45 2 1.6 1.2 0.8 0.4 0 -0.4 50 0 4 31 dB Input IP3 Over Major Attenuation States 12 16 20 24 ATTENUATION STATE (dB) 20 GHz 30 GHz 28 32 40 GHz Input IP3 vs. Temperature (Minimum Attenuation State) 60 60 50 50 40 8 1 GHz 10 GHz IP3 (dBm) IP3 (dBm) Attenuators - Digital - Chip (Only Major States are Shown) 40 30 30 20 0 0.1 1 10 100 20 0 I.L 1 dB 2 dB 4 dB 8dB 16 dB 0.1 1 10 100 31 dB -55C 25C +85C FREQUENCY (GHz) FREQUENCY (GHz) Input Power for 0.1 dB Compression 32 P0.1dB (dBm) 28 24 20 16 12 8 0.01 0.1 -55C 3 1 FREQUENCY (GHz) 25C 10 100 85C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC939A v02.0119 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Vdd +5V @ 5 mA Vss -5V @ 6 mA Control Voltage State Bias Condition Low 0 to 0.8V @ 1 A High 2 to 5V @ 1 A Absolute Maximum Ratings RF Input Power (0.5 to 40 GHz) +27 dBm Control Voltage (P0 to P4) Vdd + 0.5V Vdd +7 Vdc Vss -7 Vdc Channel Temperature 150 C Cont. Power diss (T=85 C) 0.453 W Thermal Resistance (channel to die bottom) 143.5 C/W Storage Temperature -65 to + 150 C Operating Temperature -40 to +85 C ESD Sensitivity (HBM) Class 1A Control Voltage Input P4 16 dB P3 8 dB P2 4 dB P1 2 dB P0 1 dB Attenuation State RF1 - RF2 High High High High High Reference I.L. 1 dB High High High High Low High High High Low High 2 dB High High Low High High 4 dB High Low High High High 8 dB Low High High High High 16 dB Low Low Low Low Low 31 dB Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Pad Description Pad Size 1 RF1 0.0031 [0.0787] x 0.0059 [0.149] 2 VSS 0.0027 [0.068] x 0.0027 [0.068] 3, 4, 5, 6, 7 P0, P1, P2, P3, P4 0.0027 [0.068] x 0.0027 [0.068] [1] 8 VDD 0.0027 [0.068] x 0.0027 [0.068] 9 RF2 0.0031 [0.0787] x 0.0059 [0.149] Standard Alternate 10, 11 GND 0.0031 [0.0787] x 0.0029 [0.0737] WP-9 (Waffle Pack) [2] Die Packaging Information [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Analog Devices. Attenuators - Digital - Chip Truth Table Bias Voltages & Currents 1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. DIE THICKNESS IS 0.004" [0.102 MM] 3. BACKSIDE METAL IS GROUND. NO CONNECTION REQUIRED FOR GND PAD. 4. BACKSIDE AND BOND PAD METALIZATION: GOLD For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC939A v02.0119 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Attenuators - Digital - Chip Pad Descriptions Pad Number Function Description 10, 11 GND Die bottom must be connected to RF ground. 1, 9 RF1, RF2 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 2 Vss Negative Bias -5V 3-7 P0 - P4 See truth table and control voltage table. 8 Vdd Positive Bias +5V Interface Schematic Assembly Diagram 5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC939A v02.0119 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. RF Ground Plane 0.150mm (0.005") Thick Moly Tab Attenuators - Digital - Chip The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6