For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC618LP3 / 618LP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
v08.1210
General Description
Features
Functional Diagram
Noise Figure: 0.75 dB
Gain: 19 dB
OIP3: 36 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9 mm2
Typical Applications
Electrical Specications
TA = +25° C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V
Parameter Vdd = 5 Vdc Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 1200 - 1700 1700 - 2000 2000 - 2200 MHz
Gain 19 23 16 19 13.5 17 dB
Gain Variation Over Temperature 0.012 0.008 0.008 dB/°C
Noise Figure 0.65 0.85 0.75 1.1 0.85 1.15 dB
Input Return Loss 22.5 18 19.5 dB
Output Return Loss 13 12.5 10 dB
Output Power for 1 dB
Compression (P1dB) 14.5 19 16.5 20 18 20 dBm
Saturated Output Power (Psat) 20.5 20.5 20.5 dBm
Output Third Order Intercept (IP3) 33.5 35 35.5 dBm
Supply Current (Idd) 89 118 89 118 89 118 mA
* Rbias resistor sets current, see application circuit herein
The HMC618LP3E is a GaAs pHEMT MMIC
Low Noise Amplier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.2 - 2.2 GHz. The amplier has
been optimized to provide 0.75 dB noise gure,
19 dB gain and +36 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC618LP3E shares the same package and pinout
with the HMC617LP3E 0.55 - 1.2 GHz LNA. The
HMC618LP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC618LP3(E) offers improved noise gure versus
the previously released HMC375LP3(E) and the
HMC382LP3(E).
The HMC618LP3E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femto Cells
• Public Safety Radios
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Electrical Specications
TA = +25° C, Rbias = 10K Ohm for Vdd1 = Vdd2 = 3V
Parameter Vdd = 3 Vdc Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 1200 - 1700 1700 - 2000 2000 - 2200 MHz
Gain 18 22 15 18 12.5 15.8 dB
Gain Variation Over Temperature 0.009 0.009 0.009 dB/°C
Noise Figure 0.8 1.1 0.9 1.2 0.9 1.2 dB
Input Return Loss 26 17 19 dB
Output Return Loss 14 13 11 dB
Output Power for 1 dB
Compression (P1dB) 10 15 12 15 13 15 dBm
Saturated Output Power (Psat) 16 16 16 dBm
Output Third Order Intercept (IP3) 28 28 28 dBm
Supply Current (Idd) 47 65 47 65 47 65 mA
* Rbias resistor sets current, see application circuit herein
Broadband Gain & Return Loss [1] [2] Gain vs. Temperature [1]
-25
-15
-5
5
15
25
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
Vdd=5V
Vdd=3V
RESPONSE (dB)
FREQUENCY (GHz)
S21
S22
S11
12
14
16
18
20
22
24
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
Gain vs. Temperature [2]
10
12
14
16
18
20
22
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
1700 to 2200 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1]
-25
-20
-15
-10
-5
0
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25C
+85C
- 40C
ISOLATION (dB)
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
[3] Measurement reference plane shown on evaluation PCB drawing.
Psat vs. Temperature [1] [2]
Noise Figure vs Temperature [1] [2] [3] Output P1dB vs. Temperature [1] [2]
Output IP3 vs. Temperature [1] [2]
24
26
28
30
32
34
36
38
40
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25C
+85C
- 40C
IP3 (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
10
12
14
16
18
20
22
24
1.6 1.7 1.8 1.9 2 2.1
+25C
+85C
- 40C
P1dB (dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
10
12
14
16
18
20
22
24
1.6 1.7 1.8 1.9 2 2.1
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
Vdd=5V
Vdd=3V
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85C
+25 C
-40C
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
1700 to 2200 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
Output IP3 and Idd vs.
Supply Voltage @ 1750 MHz [1]
Output IP3 and Idd vs.
Supply Voltage @ 1750 MHz [2]
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
24
26
28
30
32
34
36
38
0
20
40
60
80
100
120
140
2.7 3 3.3
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
24
26
28
30
32
34
36
38
0
20
40
60
80
100
120
140
4.5 5 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
Output IP3 and Idd vs.
Supply Voltage @ 2100 MHz [1]
Output IP3 and Idd vs.
Supply Voltage @ 2100 MHz [2]
24
26
28
30
32
34
36
38
0
20
40
60
80
100
120
140
2.7 3 3.3
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
24
26
28
30
32
34
36
38
0
20
40
60
80
100
120
140
4.5 5 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
Power Compression @ 1750 MHz [1] Power Compression @ 1750 MHz [2]
-10
0
10
20
30
-18 -16 -14 -12 -10 -8 -6 -4 -2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
0
10
20
30
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
1700 to 2200 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Power Compression @ 2100 MHz [1] Power Compression @ 2100 MHz [2]
-10
0
10
20
30
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
0
10
20
30
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Gain, Power & Noise Figure vs.
Supply Voltage @ 1750 MHz [1]
Gain, Power & Noise Figure vs.
Supply Voltage @ 1750 MHz [2]
Gain, Power & Noise Figure vs.
Supply Voltage @ 2100 MHz [1]
Gain, Power & Noise Figure vs.
Supply Voltage @ 2100 MHz [2]
12
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
1.2
4.5 5 5.5
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
12
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
1.2
2.7 3 3.3
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
12
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
1.2
4.5 5 5.5
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
12
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
1.2
2.7 3 3.3
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
1700 to 2200 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
Output IP3 vs. Rbias @ 1750 MHz Gain, Noise Figure vs. Rbias @ 1750 MHz
22
24
26
28
30
32
34
36
100 1000 10000
Vdd=5V
Vdd=3V
IP3 (dBm)
Rbias (Ohms)
14
15
16
17
18
19
20
21
22
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
100 1000 10000
Vdd=5V
Vdd=3V
GAIN (dB)
NOISE FIGURE (dB)
Rbias(Ohms)
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
Output IP3 vs. Rbias @ 2100 MHz Gain, Noise Figure vs. Rbias @ 2100 MHz
14
15
16
17
18
19
20
0
0.2
0.4
0.6
0.8
1
1.2
100 1000 10000
Vdd=5V
Vdd=3V
GAIN (dB)
NOISE FIGURE (dB)
Rbias(Ohms)
24
26
28
30
32
34
36
38
100 1000 10000
Vdd=5V
Vdd=3V
IP3 (dBm)
Rbias (Ohms)
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
1700 to 2200 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
Output Return Loss vs. Temperature [1]
-20
-15
-10
-5
0
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Input Return Loss vs. Temperature [1]
-40
-35
-30
-25
-20
-15
-10
-5
0
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
Output Return Loss vs. Temperature [2]
-20
-15
-10
-5
0
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
Input Return Loss vs. Temperature [2]
-40
-30
-20
-10
0
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
Gain vs. Temperature [1]
1200 to 1700 MHz Tune
16
18
20
22
24
26
28
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
Gain vs. Temperature [2]
16
18
20
22
24
26
28
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
Reverse Isolation vs. Temperature [1]
-50
-40
-30
-20
-10
0
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
ISOLATION (dB)
FREQUENCY (GHz)
Output P1dB vs. Temperature [2]
Noise Figure vs. Temperature [1]
8
10
12
14
16
18
20
22
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85C
+25 C
-40C
Reverse Isolation vs. Temperature [2]
-50
-40
-30
-20
-10
0
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
ISOLATION (dB)
FREQUENCY (GHz)
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Noise Figure vs. Temperature [2]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Output P1dB vs. Temperature [1]
8
10
12
14
16
18
20
22
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25C
+85C
- 40C
P1dB (dBm)
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
1200 to 1700 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 9
Output IP3 vs. Temperature [1]
22
24
26
28
30
32
34
36
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Output IP3 vs. Temperature [2]
22
24
26
28
30
32
34
36
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
IP3 (dBm)
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
[3] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
Vdd1 = Vdd2 (V) Rbias Idd1 + Idd2 (mA)
Min (Ohms) Max (Ohms) R1 (Ohms)
3V 1K [3] Open Circuit
1k 28
1.5k 34
10k 47
5V 0 Open Circuit
120 71
270 84
470 89
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Psat vs. Temperature [1]
8
10
12
14
16
18
20
22
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
Psat vs. Temperature [2]
8
10
12
14
16
18
20
22
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
+25 C
+85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
1200 to 1700 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 10
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2) +6V
RF Input Power (RFIN)
(Vdd = +5 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 9.68 mW/°C above 85 °C) 0.63 W
Thermal Resistance
(channel to ground paddle) 103.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (Vdc) Idd (mA)
2.7 35
3.0 47
3.3 58
4.5 72
5.0 89
5.5 106
Note: Amplier will operate over full voltage ranges shown above.
Typical Supply Current vs. Vdd
Rbias = 10 KOhm for 3V
Rbias = 470 Ohm for 5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC618LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 618
XXXX
HMC618LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 618
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 11
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K
Pin Number Function Description Interface Schematic
1, 3 - 5, 7, 9,
12, 14, 16 N/C No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2 RFIN This pin is DC coupled and matched to 50 Ohms.
6, 10 GND This pin and ground paddle must be
connected to RC/DC ground.
8 RES
This pin is used to set the DC current of the amplier
by selection of the external bias resistor.
See application circuit.
11 RFOUT This pin is matched to 50 Ohms.
13, 15 Vdd2, Vdd1 Power Supply Voltage for the amplier. External bypass
capacitors of 1000 pF, and 0.47 µF are required.
Application Circuit, 1700 to 2200 MHz Tune
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 12
Evaluation PCB, 1700 to 2200 MHz Tune
Item Description
J1, J2 PCB Mount SMA RF Connector
J3 - J5 DC Pin
C2, C4 1000 pF Capacitor, 0603 Pkg..
C3, C5 0.47 µF Capacitor, Tantalum
L1 15 nH, Inductor, 0603 Pkg.
L3 6.8 nH, Inductor, 0603 Pkg.
C6 220 pF Capacitor, 0402 Pkg.
C1 10 nF Capacitor, 0402 Pkg.
R1 470 Ohm resistor, 0402 Pkg.
U1 HMC618LP3(E) Amplier
PCB [2] 120586 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Item Content Part Number
Evaluation PCB HMC618LP3E
Evaluation PCB 117905-HMC618LP3E
List of Materials for Evaluation PCBEvaluation PCB Ordering Information
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 13
Application Circuit, 1200 to 1700 MHz Tune
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 14
Evaluation PCB, 1200 to 1700 MHz Tune
Item Description
J1, J2 PCB Mount SMA RF Connector
J3 - J5 DC Pin
C1 10 nF Capacitor, 0402 Pkg.
C2, C4 1000 pF Capacitor, 0603 Pkg..
C3, C5 0.47 µF Capacitor, 0603 Pkg.
C6 100 pF Capacitor, 0402 Pkg.
C7 3 pF Capacitor, 0402 Pkg.
L1 27 nH, Inductor, 0603 Pkg.
L2 5.6 nH, Inductor, 0603 Pkg.
L3 18 nH, Inductor, 0603 Pkg.
R1 470 Ohm resistor, 0402 Pkg.
U1 HMC618LP3(E) Amplier
PCB [1] 120586 Evaluation PCB
[1] Circuit Board Material: Rogers 4350.
Item Content Part Number
Evaluation PCB HMC618LP3E
Evaluation PCB EVAL01-HMC618LP3E
List of Materials for Evaluation PCBEvaluation PCB Ordering Information
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
HMC618LP3 / 618LP3E
v08.1210
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz