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VSMY98145DS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 17-May-16 1Document Number: 84368

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Power Infrared Emitting Diode, 810 nm,

Surface Emitter Technology

DESCRIPTION

As part of the SurfLightTM portfolio, the VSMY98145DS is

an infrared, 810 nm emitting diode based on surface

emitter technology with high radiant power and high speed,

molded in low thermal resistance SMD package with lens. A

42 mil chip provides outstanding radiant intensity and

allows DC operation of the device up to 1 A. Superior

ESD characteristics are ensured by an integrated Zener

diode.

FEATURES

• Package type: surface mount

• Double stack technology

• Package form: high power QFN with lens

• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24

• Peak wavelength: λp = 810 nm

• Zener diode for ESD protection up to 2 kV

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 45°

• Designed for high drive currents: up to 1 A (DC) and up to

5 A pulses

• Low thermal resistance: RthJA = 10 K/W

• Floor life: 168 h, MSL 3, according to J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared illumination for CMOS cameras (CCTV)

• Iris scan

• Machine vision

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

PRODUCT SUMMARY

COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)

VSMY98145DS 500 ± 45 810 30

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VSMY98145DS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR5V

Forward current IF1A

Surge forward current tp = 10 μs IFSM 5A

Power dissipation PV3.8 W

Junction temperature Tj115 °C

Operating temperature range Tamb -40 to +85 °C

Storage temperature range Tstg -55 to +100 °C

Soldering temperature According to fig. 7, J-STD-20 Tsd 260 °C

Thermal resistance junction / pin JESD51 RthJP 10 K/W

VSMY98145DS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 17-May-16 2Document Number: 84368

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Radiant Intensity vs. Forward Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 20406080100

PV- Power Dissipation (W)

Tamb - Ambient Temperature (°C)

RthJA = 10 K/W

0.2

0.4

0.6

0.8

1.0

0 20406080100

IF- Forward Current (A)

Tamb - Ambient Temperature (°C)

RthJA = 10 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 1 A, tp = 100 μs VF-3.33.8V

IF = 2 A, tp = 100 μs VF-3.5-V

Reverse current VR = 5 V IR- - 10 μA

Radiant intensity IF = 1 A, tp = 100 μs Ie350 500 - mW/sr

IF = 2 A, tp = 100 μs Ie-950-mW/sr

Radiant power IF = 1 A, tp = 20 ms φe-1000-mW

Angle of half intensity ϕ-± 45-deg

Peak wavelength IF = 1 A λp-810-nm

Spectral bandwidth IF = 1 A Δλ -50-nm

Rise time IF = 1 A tr-30-ns

Fall time IF = 1 A tf-30-ns

0.1

2.0 3.0 4.0

IF- Forward Current (A)

VF- Forward Voltage (V)

tp= 100 μs

100

1000

100 1000

Ie- Radiant Intensity (mW/sr)

IF- Forward Current (mA)

tp= 100 μs

VSMY98145DS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 17-May-16 3Document Number: 84368

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Relative Radiant Intensity vs. Wavelength Fig. 6 - Relative Radiant Intensity vs. Angular Displacement

TAPING DIMENSIONS in millimeters

Notes

• Empty component pockets sealed with top cover tape.

• 7 inch reel - 600 pieces per reel.

• The maximum number of consecutive missing lamps is two.

• In accordance with ANSI / EIA 481-1-A-1994 specifications.

100

700 750 800 850 900

Ie, rel - Relative Radiant Intensity (%)

λ- Wavelength (nm)

IF= 1.0 A

Ie, rel - Relative Radiant Intensity

0.6

80°

0°

0.7

0.4 0.2 0

30°

70°

60°

50°

40°

10° 20°

1.0

0.9

0.8

ϕ - Angular Displacement

Ø 13.0

(0.512)

typ.

14.40 (0.57) typ.

Ø 60.0 ± 1.0

(2.36 ± 0.039) Ø 178 ± 2.0

(7.0 ± 0.08)

4.00 ± 0.10

8.00 ± 0.10

12.00 + 0.30

- 0.10

2.00 ± 0.05

1.75 ± 0.10

5.50 ± 0.05

Ø 1.50 + 0.10

Ø 1.50 + 0.25

Cathode

VSMY98145DS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 17-May-16 4Document Number: 84368

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

Notes

• Tolerance is ± 0.10 mm (0.004") unless otherwise noted.

• Specifications are subject to change without notice.

Ø 2.76

3.85 ± 0.1

2.24 ± 0.1

0.40 ± 0.05

0.15 ± 0.05

R0.15

R1.38

2.80

1.00

1.90

2.70

Anode

Cathode

1.00.5

2.8

VSMY98145DS

www.vishay.com Vishay Semiconductors

Rev. 1.0, 17-May-16 5Document Number: 84368

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SOLDER PROFILE

Fig. 7 - Lead (Pb)-free Reflow Solder Profile

According to J-STD-020

DRYPACK

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during

transportation and storage. Each bag contains a desiccant.

FLOOR LIFE

Floor life (time between soldering and removing from MBB)

must not exceed the time indicated on MBB label:

Floor life: 168 h

Conditions: Tamb < 30 °C, RH < 60 %

Moisture sensitivity level 3, according to J-STD-020B

DRYING

In case of moisture absorption devices should be baked

before soldering. Conditions see J-STD-020 or label.

Devices taped on reel dry using recommended conditions

192 h at 40 °C (+ 5 °C), RH < 5 %.

255 °C to 260 °C

10 s max.

6 °C/s max.

3 °C/s max.

150 °C

200 °C

217 °C

60 s to 120 s60 s max.

Time

Temperature

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Revision: 01-Jan-2021 1Document Number: 91000

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