Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS1100
1100 Watts, 50 Volts
Pulsed Avionics at 1030 MHz
GENERAL DESCRIPTION
The MDS1100 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadb and capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55TU-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipati on @ 25°C1 8750 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 4.5 V
Collector Current (Ic) 100 A
Maximum Temperatures
Storage Tempera ture -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Out F = 1030 MHz, Vcc = 50 Volts 1000 W
Pg Power Gain Note 2 8.9 dB
ηc Collector Efficiency 45 %
RL Return Loss 11 dB
Tr Rise Time 100 nS
Pd Pulse Droop 0.7 dB
VSWR Load Mismatch Tolerance1
F = 1030 MHz, Vcc = 50 Volts
Note 2
4.0:1
FUNCTIONAL CHARAC TERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 50 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 100 mA 65 V
hFE DC – Current Gain Vce = 5V, Ic = 5A 20
θjc1 Thermal Resistance 0.02 °C/W
NOTES: 1. At rated output power and pulse conditions
2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period, Pin = 130 Watts
Rev B, September 2005
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
Gain vs. Output Pow e r
8.2
8.4
8.6
8.8
9
9.2
9.4
9.6
0 200 400 600 800 1000 1200
Pout (W)
Gai n (dBm )
Effi ci ency vs. Ou tpu t P ower
30
32
34
36
38
40
42
44
46
48
200 400 600 800 1000 1200
Pout (W)
E ffi ci en cy (% )
R (ohms) jX (ohms)
Zin 1.75 +j2.37
Zcl 0.60 -j1.62
Frequency = 1030 MHz, Vcc = 50V, Pin = 130W
Zin Zcl
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS1100
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS1100
