© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1Publication Order Number:
BC846ALT1/D
BC846ALT1G Series,
SBC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
•Moisture Sensitivity Level: 1
•ESD Rating − Human Body Model: >4000 V
ESD Rating − Machine Model: >400 V
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
VCEO
65
45
30
Vdc
Collector−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
VCBO
80
50
30
Vdc
Emitter−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
VEBO
6.0
6.0
5.0
Vdc
Collector Current − Continuous IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA 417 °C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
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See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
ORDERING INFORMATION
1
XX M G
G
XX = Device Code
M = Date Code*
G=Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BC846ALT1G Series, SBC846ALT1G Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846A, B, SBC846A, B
(IC = 10 mA) BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
V(BR)CEO 65
45
30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage BC846A, B
(IC = 10 mA, VEB = 0) BC847A, B, C BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
V(BR)CES 80
50
30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage BC846A, B, SBC846A, B
(IC = 10 mA) BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
V(BR)CBO 80
50
30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage BC846A, B, SBC846A, B
(IE = 1.0 mA) BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
V(BR)EBO 6.0
6.0
5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO −
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A, SBC846A
(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B, SBC846B, SBC848B
BC847C, BC848C, SBC847C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A, SBC846A, SBC846A
BC846B, BC847B, BC848B,
BC849B, BC850B, SBC846B, SBC848B
BC847C, BC848C, BC849C, BC850C, SBC847C
hFE −
−
−
110
200
420
90
150
270
180
290
520
−
−
−
220
450
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat) −
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat) −
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on) 580
−
660
−
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C,
SBC846A, B, SBC847C, SBC848B
f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C
NF
−
−
−
−
10
4.0
dB
BC846ALT1G Series, SBC846ALT1G Series
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3
BC846A, BC847A, BC848A, SBC846A
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
0.10.010.0010.0001
0
0.02
0.18
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20 150°C
−55°C
25°C
0.4
0.9 IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.04
0.06
0.08
0.10
0.12
0.14
0.16
BC846ALT1G Series, SBC846ALT1G Series
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4
BC846A, BC847A, BC848A, SBC846A
Figure 5. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 7. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 8. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846ALT1G Series, SBC846ALT1G Series
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5
BC846B, SBC846B
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
0.10.010.0010.0001
0
0.15
0.30
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20 150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
500 0.25
0.20
0.05
0.10
BC846ALT1G Series, SBC846ALT1G Series
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6
BC846B, SBC846B
Figure 13. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 14. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5 5.0 20 50 100
-55°C to 125°C
qVB for VBE
Figure 15. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 16. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846ALT1G Series, SBC846ALT1G Series
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7
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
0.10.010.0010.0001
0
0.05
0.30
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
300
400
500
1.0
BC846ALT1G Series, SBC846ALT1G Series
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8
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
Figure 21. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 23. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 24. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846ALT1G Series, SBC846ALT1G Series
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9
BC847C, BC848C, BC849C, BC850C, SBC847C
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
0.10.010.0010.0001
0
0.05
0.30
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
300
400
500
1.0
600
700
800
900
BC846ALT1G Series, SBC846ALT1G Series
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10
BC847C, BC848C, BC849C, BC850C, SBC847C
Figure 29. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 31. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 32. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846ALT1G Series, SBC846ALT1G Series
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11
1 mS
Thermal Limit
1 S
Figure 33. Safe Operating Area for
BC846A, BC846B
Figure 34. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
100101
0.001
0.01
0.1
1
1001010.1
0.001
0.01
0.1
1
Figure 35. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
BC846ALT1G Series, SBC846ALT1G Series
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12
ORDERING INFORMATION
Device Marking Package Shipping†
BC846ALT1G
1A SOT−23
(Pb−Free) 3,000 / Tape & Reel
SBC846ALT1G
BC846ALT3G 1A SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC846BLT1G
1B SOT−23
(Pb−Free) 3,000 / Tape & Reel
SBC846BLT1G
BC846BLT3G
1B SOT−23
(Pb−Free) 10,000 / Tape & Reel
SBC846BLT3G
BC847ALT1G
1E
SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC847ALT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC847BLT1G
1F SOT−23
(Pb−Free) 3,000 / Tape & Reel
SBC847BLT1G
BC847BLT3G 1F SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC847CLT1G
1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
SBC847CLT1G
BC847CLT3G 1G SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC848ALT1G 1J SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC848BLT1G
1K SOT−23
(Pb−Free) 3,000 / Tape & Reel
SBC848BLT1G
BC848BLT3G 1K SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC848CLT1G
1L
SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC848CLT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC849BLT1G
2B
SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC849BLT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC849CLT1G
2C
SOT−23
(Pb−Free) 3,000 / Tape & Reel
BC849CLT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
BC850BLT1G 2F SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC850CLT1G 2G SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
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13
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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