TSUS4300
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Oct-15 1Document Number: 81053
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 950 nm, GaAs
DESCRIPTION
TSUS4300 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 16°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector TEFT4300
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8636-1
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSUS4300 18 ± 16 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSUS4300 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
TSUS4300-ASZ Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 2A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W
TSUS4300
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Oct-15 2Document Number: 81053
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21315
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
R
thJA
= 300 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21316
I
F
- Forward Current (mA)
R
thJA
= 300 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF-1.31.7V
IF = 1.5 A, tp = 100 μs VF-2.2- V
Temperature coefficient of VFIF = 100 mA TKVF --1.3-mV/K
Reverse current VR = 5 V IR- - 100 μA
Breakdown voltage IR = 100 μA V(BR) 540-
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj-30-pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie71835mW/sr
IF = 1.5 A, tp = 100 μs Ie- 160 - mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe-20-mW
Temperature coefficient of φeIF = 20 mA TKφe- -0.8 - %/K
Angle of half intensity ϕ-± 16- deg
Peak wavelength IF = 100 mA λp- 950 - nm
Spectral bandwidth IF = 100 mA Δλ -50-nm
Temperature coefficient of λpIF = 100 mA TKλp-0.2-nm/K
Rise time IF = 100 mA tr- 800 - ns
IF = 1.5 A tr- 400 - ns
Fall time IF = 100 mA tf- 800 - ns
IF = 1.5 A tf- 400 - ns
Virtual source diameter d - 2.1 - mm
TSUS4300
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Oct-15 3Document Number: 81053
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
tp- Pulse Duration (ms)
94 7947
10 0
10 1
101
10-1
10 -1 10 010 2
10 -2
tp/T = 0.01, I FM =2A
0.05
0.1
0.5
0.02
0.2
I - Forward Current (A)
F
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I - Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF- Forward Current (mA)
94 7979
103
101102104
100
0.1
1
10
1000
100
I - Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 7980
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
-10 10 50
0100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
TSUS4300
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Oct-15 4Document Number: 81053
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
900 950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φe rel - Relative Radiant Power
IF = 100 mA
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 7981
0.6
0.9
0.8
0°
30°
10°20°
40°
50°
60°
70°
80°
0.7
1.0
3.9 ± 0.15
Ø 3 ± 0.1
< 0.6
3.5 ± 0.1
4.5 ± 0.3
6.1 ± 0.3
34.7 ± 0.5
1.5 ± 0.5
0.5
+ 0.2
- 0.1
2.54 nom.
Drawing-No.: 6.544-5269.02-4
Issue: 5; 28.07.14
technical drawings
according to DIN
specications
AC
AREA NOT PLANE
(2.8)
CHIP POSITION
3.2 ± 0.1
0.4
+ 0.15
- 0.05
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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