© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK)
RoHS
LSIC2SD120C05
Features
Applications
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Maximum Ratings
Characteristics Symbol Conditions Value Unit
Repetitive Peak Reverse Voltage VRRM -1200 V
DC Blocking Voltage VRTj = 25 °C 1200 V
Continuous Forward Current IF
TC = 25 °C 18.1
A
TC = 135 °C 8.7
TC = 159 °C 5
Non-Repetitive Forward Surge Current IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 40 A
Power Dissipation PTot
TC = 25 °C 100 W
TC = 110 °C 43.3
Operating Junction Temperature TJ--55 to 175 °C
Storage Temperature TSTG --55 to 150 °C
Soldering Temperature (reflow MSL 1) Tsold -260 °C
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where im-
provements in efficiency, reliability, and thermal manage-
ment are desired.
Circuit Diagram TO-252-2L ( DPAK )
2
1
Pin 1 Pin 2
Case
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “PB-free” logo =
PB--free lead plating
Environmental
Pb
RoHS
Pb
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK)
Figure 2: Typical Reverse CharacteristicsFigure 1: Typical Foward Characteristics
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Forward Voltage VF
IF = 5 A, TJ = 25 °C -1. 5 1. 8 V
IF = 5 A, TJ = 175 °C - 2.1
Reverse Current IR
VR = 1200 V , TJ = 25 °C - <1 100 μA
VR = 1200 V , TJ = 175 °C - 5
Total Capacitance C
VR = 1 V, f =1 MHz -310
pF
VR = 400 V, f = 1 MHz - 29
VR = 800 V, f = 1 MHz - 21
Total Capacitive Charge QC VR = 800 V, - 30 nC
Electrical Characteristics
Footnote: TJ = +25 °C unless otherwise specified
Thermal Characteristics
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Thermal Resistance RθJC -- 1.50 °C/W
Q
c
=
V
R
C(V)dV
∫
0
0
1
2
3
4
5
6
7
8
9
10
00.5 11.5 22.5 33.5 44.5
Forward Current (A)
Forward Voltage (V)
T
J
= -55°C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
°C
T
J
= 175
1E -8
1E -7
1E -6
1E -5
1E-4
0200 400600 80010001200
Reverse Current, I
R
(A)
Reverse Voltage, V
R
(V)
T
J
= 175 °C
TJ
= 150 °C
TJ
= 125 °C
T
J
= 25 °C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK)
Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage
Figure 4: Current Derating
Figure 3: Power Derating
0.00
20.00
40.00
60.00
80.00
100.00
120.00
25 50 75 100125 150 175
Power (W)
Case Temperature (
°C
)
0
10
20
30
40
50
60
25 50 75 100125 150 175
Forward Current (A)
Case Temperature (°C )
10 % Duty
30 % Duty
50 % Duty
70 % Duty
DC
0
50
100
150
200
250
300
350
110100 1000
Capacitance (pF)
Voltage (V)
0
5
10
15
20
25
30
35
40
0200 400600 8001000
Capacive Charge (nC)
Voltage (V)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK)
Packing Options
Part Number Marking Packing Mode M.O.Q
LSIC2SD120C05 SIC2SD120C05 Tape and Reel 2500
Part Numbering and Marking System
Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance
0
2
4
6
8
10
12
0200 400600 800 1000
Stored Energy (uJ)
Voltage (V)
1.00E-03
1.00E-02
1.00E-01
1.00E+00
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Normalized Transient Thermal Impedance
Pulse Width (s)
Single
0.01
0.02
0.05
0.1
0.3
0.5
SIC2SD120C05
YYWWD
L
F
ZZZZZZ-ZZ
D = Special code (fixed)
SIC = SiC Diode
2 = Gen2
SD = Schottky Diode
C = TO-252-2L (DPAK)
YY = Year
WW = Week
ZZZZZZ-ZZ = Lot Number
120 = Voltage Rating (1200 V)
05 = Current Rating ( 5 A)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK)
Dimensions TO-252-2L (DPAK)
A
A1
b 2x
b3
c
c2
D
D1
E
E1
e 2x
H
L
L2
L3
L4
P
SEE DETAIL "C"
DETAIL "C"
NOTE:
- L4- MAXIMUM PLASTIC PROTRUSION.
- L2- REFERENCE FOR FOOT LENGTH MEASUREMENT.
Recommended Solder Pattern Layout
2.04
2.28
3.07
6.25
6.80
1.50
UNIT: mm
Symbol Inches Millimeters
Min Nom Max Min Nom Max
A0.085 0.090 0.095 2.16 2.29 2.41
A1 0 0.003 0.005 0 0.08 0.13
b0.025 0.030 0.035 0.64 0.76 0.89
b3 0.195 0.200 0.215 4.95 5.08 5.46
c0.018 0.020 0.024 0.46 0.51 0.61
C2 0.018 0.032 0.035 0.46 0.81 0.89
D0.235 0.240 0.245 5.97 6.10 6.22
D1 0.205 - - 5.21 - -
E0.250 0.260 0.265 6.35 6.60 6.73
E1 0.170 - - 4.32 - -
e0.090 BSC 2.29 BSC
H0.370 0.387 0.410 9.40 9.83 10.41
L0.040 0.045 0.050 1.02 1. 14 1.27
L2 0.010 BSC 0.25 BSC
L3 0.035 - 0.050 0.89 - 1.27
L4 0 - 0.006 0 - 0.15
P0° - 8 ° 0° - 8 °
Carrier Tape & Reel Specification TO-252-2L (DPAK)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK)
Carrier Tape & Reel Specification TO-252-2L (DPAK)
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