
Features
1 of 8
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SBB1089Z
50MHz to 850MHz,
CASCADABLE
RFMD’s SBB1089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB1089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB1089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Gain and Return Loss versus Frequency
(w/ App. Ckt.)
-35
-25
-15
-5
5
15
25
35
50 150 250 350 450 550 650 750 850
Frequency (MHz)
dB
S11
S21
S22
S22
S21
S11
OIP3=43.1dBm at 240MHz
P1dB=19.6dBm at 500MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite
Terminals
DS120509
Package: SOT-89
SBB1089Z
50MHz to
850MHz, Cas-
cadable Active
Bias InGaP
HBT MMIC
Amplifier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 15.5 dB 70MHz
14.0 15.5 17.0 dB 240MHz
14.0 15.5 17.0 dB 400MHz
Output Power at 1dB Compression 19.0 dBm 70MHz
19.0 dBm 240MHz
18.0 19.0 dBm 400MHz
Third Order Intercept Point 42.0 dBm 70MHz
43.0 dBm 240MHz
38.5 40.5 dBm 400MHz
Return Loss 50 to 850 MHz Minimum 10dB
Input Return Loss 14.0 18.0 dB 70MHz to 5000MHz
Output Return Loss 12.0 16.0 dB 70MHz to 5000MHz
Noise Figure 3.5 4.2 dB 500MHz
Reverse Isolation 18.0 dB 70MHz to 5000MHz
Thermal Resistance 48.8 °C/W junction - lead
Device Operating Voltage 5.0 5.3 V
Device Operating Current 82.0 90.0 98.0 mA
Test Conditions: VD=5V, ID=90mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, Tested with Bias Tees