SUP70040E
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S13-0736-Rev. A, 13-Apr-15 1Document Number: 62996
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N-Channel 100 V (D-S) MOSFET
Ordering Information:
SUP70040E-GE3 (Lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
•DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
PRODUCT SUMMARY
VDS (V) RDS(on) () MAX. ID (A) dQg (TYP.)
100 0.0040 at VGS = 10 V 120 76
0.0046 at VGS = 7.5 V 120
TO-220AB
Top View
S
S
D
G
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID
120 d
A
TC = 70 °C 120 d
Pulsed Drain Current (t = 100 μs) IDM 480
Avalanche Current IAS 73
Single Avalanche Energy aL = 0.1 mH EAS 266 mJ
Maximum Power Dissipation aTC = 25 °C PD
375 b
W
TC = 125 °C 125 b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient (PCB Mount) cRthJA 40 °C/W
Junction-to-Case (Drain) RthJC 0.4
SUP70040E
www.vishay.com Vishay Siliconix
S13-0736-Rev. A, 13-Apr-15 2Document Number: 62996
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V - - 1 μA
VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 150
VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 5 mA
On-State Drain Current aID(on) V
DS 10 V, VGS = 10 V 120 - - A
Drain-Source On-State Resistance aRDS(on)
VGS = 10 V, ID = 20 A - 0.0032 0.0040
VGS = 7.5 V, ID = 15 A - 0.0035 0.0046
Forward Transconductance agfs VDS = 15 V, ID = 20 A - 82 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V, VDS = 50 V, f = 1 MHz
- 5100 -
pFOutput Capacitance Coss - 2025 -
Reverse Transfer Capacitance Crss - 165 -
Total Gate Charge cQg
VDS = 50 V, VGS = 10 V, ID = 20 A
-76120
nCGate-Source Charge cQgs -23-
Gate-Drain Charge cQgd -17-
Gate Resistance Rgf = 1 MHz 0.6 3.3 6.6
Turn-On Delay Time ctd(on)
VDD = 50 V, RL = 5
ID 10 A, VGEN = 10 V, Rg = 1
-1530
ns
Rise Time ctr-2240
Turn-Off Delay Time ctd(off) -55100
Fall Time ctf-1530
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current ISM --480A
Forward Voltage aVSD IF = 10 A, VGS = 0 V - 0.8 1.5 V
SUP70040E
www.vishay.com Vishay Siliconix
S13-0736-Rev. A, 13-Apr-15 3Document Number: 62996
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
50
100
150
200
0 2 4 6 8 10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 7 V
V
GS
= 5 V
V
GS
= 6 V
0
40
80
120
160
200
0 14 28 42 56 70
gfs - Transconductance (S)
ID - Drain Current (A)
TC = 125 °C
T
C
= - 55
°
C
T
C
= 25
°
C
0
2225
4450
6675
8900
0 20406080100
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0
30
60
90
120
150
0 2 4 6 8 10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
T
C
= - 55
°
C
T
C
= 125
°
C
TC = 25°C
0
0.002
0.004
0.006
0.008
0306090120
RDS(on) -On-Resistance (Ω)
ID- Drain Current (A)
VGS = 7.5 V
VGS = 10 V
0
2
4
6
8
10
020406080
VGS -Gate-to-Source Voltage (V)
Qg-Total Gate Charge (nC)
VDS= 80 V
VDS= 50 V
VDS= 25 V
ID= 20 A
SUP70040E
www.vishay.com Vishay Siliconix
S13-0736-Rev. A, 13-Apr-15 4Document Number: 62996
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.6
0.9
1.2
1.5
1.8
2.1
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
ID = 20 A
V
GS
= 10 V
0.000
0.004
0.008
0.012
0.016
0.020
0 2 4 6 8 10
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
T
J
= 150
°
C
T
J
= 25
°
C
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
1.6
2.2
2.8
3.4
4
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) (V)
TJ-Temperature (°C)
ID= 250 μA
D
SUP70040E
www.vishay.com Vishay Siliconix
S13-0736-Rev. A, 13-Apr-15 5Document Number: 62996
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
Limited by RDS(on)*
100 μs
IDM Limited
TC= 25 °C
Single Pulse
BVDSS Limited
1 ms
100 ms -DC
10 ms
IDLimited
10 μs
10-4 10-3 10-2 10-1 1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
SUP70040E
www.vishay.com Vishay Siliconix
S13-0736-Rev. A, 13-Apr-15 6Document Number: 62996
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62996.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
Single Pulse
10
Package Information
www.vishay.com Vishay Siliconix
Revison: 16-Jun-14 1Document Number: 71195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220AB
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
D2
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
D2 12.19 12.70 0.480 0.500
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
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Revision: 01-Jan-2021 1Document Number: 91000
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