This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3934 Silicon NPN epitaxial planar type For high-frequency wide-band low-noise amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 -0.0 Features 0.15+0.10 -0.05 1.250.10 2.10.1 0.9+0.2 -0.1 2 0.20.1 1 5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0.90.1 3 * High transition frequency fT * S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing (0.65) (0.65) 1.30.1 Absolute Maximum Ratings Ta = 25C 2.00.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 12 V Emitter-base voltage (Collector open) VEBO 2.5 V Collector current IC 30 mA Peak collector current ICP 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 0 to 0.1 Parameter 10 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 1U Electrical Characteristics Ta = 25C 3C Symbol Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 100 nA IEBO VEB = 2 V, IC = 0 1 A hFE VCE = 10 V, IC = 10 mA fT VCE = 10 V, IC = 10 mA, f = 0.8 GHz Di sc Forward current transfer ratio on tin Emitter-base cutoff current (Collector open) ue Parameter Transition frequency nc e/ Collector output capacitance (Common base, input open circuited) te na Forward transfer gain M ain Maximum unilateral power gain Noise figure Cob Conditions Min Typ Max 40 4.5 VCB = 10 V, IE = 0, f = 1 MHz Unit GHz 1.2 pF S21e2 VCE = 10 V, IC = 20 mA, f = 0.8 GHz 9 12 dB GUM VCE = 10 V, IC = 20 mA, f = 0.8 GHz 12 14 dB NF VCE = 10 V, IC = 5 mA, f = 0.8 GHz 1.3 2.5 dB Pl Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2003 SJC00144BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3934 PC Ta IC VCE IC VBE 30 60 Ta = 25C Collector current IC (mA) IB = 300 A 20 250 A Ta = 75C 80 40 15 200 A 10 150 A 100 A 30 20 10 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 5 -25C 40 M Di ain sc te on na tin nc ue e/ d 120 VCE = 10 V 25C 50 25 160 Collector current IC (mA) Collector power dissipation PC (mW) 200 50 A 0 40 80 120 0 160 1 Ta = 75C 25C -25C 1 6 8 10 0 12 0 0.4 10 Ta = 75C 120 25C 80 -25C 40 0 0.1 100 1 10 1.6 2.0 fT I C 6 4 2 0 100 Ta = 25C VCE = 10 V 1 10 100 Collector current IC (mA) Collector current IC (mA) NF IC S11 , S22 on tin ue Collector current IC (mA) 160 1.2 8 VCE = 10 V 200 0.8 Base-emitter voltage VBE (V) hFE IC 10 0.01 0.1 4 240 IC / IB = 10 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0.1 2 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) 100 0 Transition frequency fT (GHz) 0 Di sc nc e/ IE = 0 f = 1 MHz Ta = 25C 0.8 Rg = 50 VCE = 10 V f = 800 MHz 0.4 1 0.8 1.5 2 0.4 6 VCE = 10 V IC = 20 mA E : Earth 3 4 0.2 5 .2 0 .4 .6 .8 1 800 MHz 500 MHz 1.5 2 3 4 5 10 1 000 MHz S11 2 1 000 MHz S22 -10 800 MHz 500 MHz -5 -4 - 0.2 0.2 -3 - 0.4 0 1 10 100 10 4 Pl 0.6 Collector-base voltage VCB (V) 2 8 Noise figure NF (dB) te na 1.0 M ain Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 1.2 0 1 10 Collector current IC (mA) SJC00144BED 100 - 0.6 -2 - 0.8 -1 -1.5 tin on ue +90 +150 +60 S21 500 MHz 180 -10 -15 -20 -25 -30 1 000 MHz 800 MHz 5 10 -120 15 20 -150 -30 -90 -60 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. Di sc e/ nc te na +120 Pl M ain M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3934 S11 , S22 VCE = 10 V IC = 20 mA E : Earth 800 MHz +30 1 000 MHz S 500 MHz 12 0 SJC00144BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.