Features , . High breakdown voltage: Vogo2300V. - - Small reverse transfer capacitance and excellent high frequency characteris- tic Cre=1.8pF(NPN), 2.3pF(PNP) Vepz30V. . Adoption of MBIT process. Absolute Maximum Ratings at Ta=25C Collector_to-Base Voltage Veo Collector-to-Emitter Voltage Vero Emitter-to-Base Voltage Vepo Collector Current Io Collector Current (Pulse) Icp Allowable Collector Po Dissipation Junction Temperature Ty Storage Temperature T3tg Electrical Characteristics at Ta=25C Collector Cutoff Current Topo Emitter Cutoff Current TrRo pC Current Gain hep / Gain Bandwidth Product fy Output Capacitance Cob Reverse Transfer Cre Capacitance Collector to Emitter VoE(sat) Saturation Voltage Base to Emitter VBE( sat) Saturation Voltage Collector to Base Vc BR)CBO Breakdown Voltage Collector to Emitter Vc Br)CEO Breakdown Voltage , Base to Emitter V(BR)EBO Breakdown Voltage 2SA1381/2SC3503 PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications unit (-)300 (~)300 (=)5 (-)100 (-)200 1.2 T,=25C T 150 -55 to +150 axBBeaae o 9 aq min typ max unit Vopz(-)200V,I,=0 (-)0.1 pA Vppe(-)4V,Ip20 (-)0.1, pa Vog2(-)30V,Ig=(-) 10mA 150 MHz Vop=(-)30V, f= 1MHz 2.6 pF , (3.1) Vop=(-)30V, f= 1MHz 1.8 pF (2.3) Ig=(-)20mA,Ip=(-)2mA (+)0.6 Vv To=(-)20mA,Ip=(-)2mA (-)1.0 Vv Ig=(-)10pA,1,=0 (-)300 v Io=(-) 1mA, Rpp=0o (-)300 Vv To=(-)10pA,Ig=0 (-)5 Vv TUPI # The 2SA1381/2SC3503 are classified by 10mA her as follows: yo c 80 | 60 D 120 [ 100 E 200] 160 F 320] Package Dimensions 2009A (unit: mm) 4 3.07 JEDEC: TO-126 C: Collector E: Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3107KI/D134MW,TS No.1426-1/4 wm 799707b 0020233 OLS 239- - ~ 2SA1381/2SC3503 I -.V 20 2841381 ~18 a o m ae S oO. & & En o i 6 9 3 -s cj -2 9 =0 -2.-3 -4 -6 9 Collector_to Emitter Voltage, Vopr -V Ic - VCE 604 50 KA A0HKA - 304 20KA 10# Collector Current,Ip - mA =0 Coliector-to-Emitter Voltage,Vog - V Ic - VBE OSA I3BT Vop= 10V . LL -80 oO &] 2] -60) WEabea lef EG Pree 1 & LT} | Collector Current ,I - mA ~2 - LL! 0 -O2 -% -06 = 0.8 ~10 Base-to-Emitter Voltage, Vpp - V hFE - Ic 1381 Vor= | DC Current Gain, hpp = = -100 Coliector Current,I, - mA Collector Current ,Ip - mA Collector-to-Emitter Voltage ,Vop - V Ic - Collector Current,Ip - mA Collector-to-Emitter Voltage, Voz - Vv Ic - VBE 1 4 077503503 Vop=10V . 1 100) an] 80 a : g 60 REOP ee N & 4 I Ps) oO 3 j | 20 oO oO 0 02 04 _06 0.8 Te Base-to-Emitter Voltage, Van ~~ Vv h - I 2803503 Vom = 10V fs a S 4 o <3 100 ve S o ca Se 3 oO a 1 100 Collector Current,I, ~- mA 240 mm 7997076 0020234 TT) i28A1381/2SC3503 Collector-to-Emitter Saturation g 8 6 Gain-Bandwidth Product,f, -. MHz 10 -10 oe) Collector Current Ip, - wA Cob - Veg 28A1381 f= | MHz 3 Output Capacitance, Cob pF o =1.0 -10 100 Collector-to-Base Voltage, Von - Vv Cre - Vcg 1381 t=] Ss Reverse Transfer Capacitance, Cre - pF 3 1.0 TH19 100 Collector-to-Base Voltage,Vop - V VCE(s -1 * oS 28A1381 =10 Voltage, Vor(sat) - V 3S -10 aM 10 Collector Current,I, - mA Gain-Bandwidth Product,f > - MHz Collector-to-Emitter Saturation 2803503 =30V Collector Current ,Ig ~ mA Cob - Veg 2803503 f= (MH2 Output Capacitance, Cob pF 10 0 10 Collector. to. Base Voltage, Von - Vv Cre Vee 2803503 f= IMHz Reverse Transfer Capacitance, Cre pF 10 10 10 Collector-to- Base Voltage, Vop - Vv v t) - Ic 2863503 =10 Voltage, Vop(sat) - Vv 0. Collector Current,I, = mA Mi 7997076 0020235 938 mm 2412SA1381/2SC3503 VBE(sat) - Ic VBE(sat) - 1 1381 Ip=! Voltage, Vpr(sat) 7 Voltage, Vee(sat) ~ V Base-to-Emitter Saturation Base-to-Emitter Saturation 49} -10 T00 Collector Current,I, - mA AS 0 Tgp 2881381 Collector Current ,Ig - mA Icp 1 2 8. Collector Current,I, - mA Collector Current,I, - mA -10 .. # . 100 Collector-to-Emitter Voltage,Vop - V Pc - Ta Collector-to-Emitter Voltage, Vop - V 138 o nn No fin Collector Dissipation, Pg - : ao @& 80. 10 120 40 1 Ambient Temperature,Ta - C (242 ME 7997076 0020236 674 me