PT4800/PT4800F/PT4810/PT4810F/PT4850F PT4800/PT4800F/PT4810 PT4810F/PT4850F Thin Type Phototransistor Features Outline Dimensions 1.5 0.8 1.6 PT4800/F PT4850F 2 Epoxy resin 3.5 1.0 1.7 0.8 17.5 0.5 1 PT4810/F 2 0.8 0.5MIN. 1.8 0.7 2 - 0.45 2 - 0.9 PT4810F Mark(blue) PT4850F Mark (black ) Applications ( Unit : mm ) 3.0 2 - C0.5 0.8 Burry's dimensions : 0.3MAX Rest of gate : 0.3MAX 1. Thin type package ( Thickness : 1.5mm ) 2. Visible light cut-off type : PT4800F/PT4810F/PT4850F 3. Single phototransistor output : PT4800/PT4800F/PT4850F Darlington phototransistor output: PT4810/PT4810F 4. Thin type 1. VCRs 2. Floppy disk drives 2.54 1 2 - 0.25 2 1 Emitter 2 Collector Epoxy resin Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage PT4800/PT4800F/PT4850F Collector current PT4810/PT4810F Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature PT4800 Transparent resin PT4810 Transparent blue resin F type Visible light cut-off resin ( black ) ( Ta = 25C ) Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 20 50 75 - 25 to + 85 - 40 to + 85 260 Unit V V mA mW C C C *1 For 3 seconds at the position of 1.8mm from the bottom face of resin package " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " 1 PT4800/PT4800F/PT4810/PT4810F/PT4850F Electro-optical Characteristics Parameter PT4800 PT4800F *2 Collector current PT4850F PT4810 PT4810F PT4800/PT4800F PT4850F Collector dark current PT4810/PT4810F PT4800/PT4800F *2 PT4850F Collector-emitter saturation voltage PT4810/PT4810F ( Ta = 25C ) Symbol IC I CEO V CE ( sat ) BV CEO Emitter-collector breakdown voltage BV ECO PT4800 PT4800F PT4850F PT4810 PT4810F PT4800/PT4800F PT4850F TYP. 0.4 0.25 - MAX. 1.0 0.75 0.56 7.0 6.0 Unit mA mA mA mA mA E e = 0, VCE = 20V - - 0.1 mA E e = 0, VCE = 10V E e = 10mW/cm2 I C = 0.5mA E e = 1mW/cm2 I C = 2.5mA I C = 0.1mA Ee = 0 I E = 0.01mA Ee = 0 - - 1.0 mA - - 0.4 V - - 1.0 V 35 - - V 6 - - V - 800 860 860 800 860 - nm nm nm nm nm - 3.0 - s - 80 400 s - 3.5 - s - 70 350 s - 35 - E e = 1mW/cm2 VCE = 5V p Rise time tr PT4810/PT4810F Response time MIN. 0.12 0.08 0.12 0.45 0.27 E e = 0.1mW/cm 2 VCE = 2V Collector-emitter breakdown voltage Peak sensitivity wavelength Conditions PT4800/PT4800F PT4850F Fall time tf PT4810/PT4810F Half intensity angle - VCE = 2V, I C = 2mA R L = 100 VCE = 2V I C = 10mA R L = 100 V CE = 2V, I C = 2mA R L = 100 V CE = 2V I C = 10mA R L = 100 - *2 E e : Irradiance by CIE standard light source A ( tungsten lamp) Fig. 2-a Collector Dark Current vs. Ambient Temperature ( PT4800/PT4800F/PT4850F ) -6 Fig. 1 Collector Power Dissipation vs. Ambient Temperature 10 40 (A) 60 CEO 80 2 10 - 7 Collector dark current I Collector power dissipation P C ( mW ) 5 VCE = 20V 100 5 2 10 - 8 5 2 10 - 9 5 20 2 0 - 25 0 25 50 75 85 Ambient temperature T a ( C ) 100 10 - 10 0 25 50 75 Ambient temperature T a ( C ) 100 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 2-b Collector Dark Current vs. Ambient Temperature ( PT4810/PT4810F ) -4 5 10 - 5 (A) VCE = 5V E e = 1mW/cm 2 140 5 10 - 6 CEO Collector dark current I 160 V CE = 10V Relative collector current ( % ) 10 Fig. 3-a Relative Collector Current vs. Ambient Temperature ( PT4800/PT4800F/PT4850F ) 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 120 100 80 60 40 20 10 - 11 5 - 25 0 25 50 75 Ambient temperature Ta ( C ) 0 0 100 Fig. 3-b Relative Collector Current vs. Ambient Temperature ( PT4810/PT4810F ) 100 70 ( PT4800 ) V CE = 5V T a = 25C 10 Collector current I C ( mA ) Relative collector current ( % ) 20 VCE = 2V E e = 0.1mW/cm 2 125 20 30 40 50 60 Ambient temperature T a ( C ) Fig. 4-a Collector Current vs. Irradiance 175 150 10 5 2 1 0.5 75 0.2 50 - 25 0 25 50 75 Ambient temperature T a ( C ) 0.1 0.1 100 Fig. 4-b Collector Current vs. Irradiance ( PT4800F/PT4850F ) 5 Collector current I C ( mA ) Collector current I C ( mA ) 0.5 0.2 10 20 V CE = 2V T a = 25C V CE = 5V 5 T a = 25C 1 0.5 2 5 1 Irradiance E e ( mW/cm2 ) Fig. 4-c Collector Current vs. Irradiance ( PT4810/PT4810F ) 10 2 0.2 2 PT4810 1 PT4810F 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 Irradiance E e ( mW/cm2 ) 10 20 0.1 2 5 2 10-1 Irradiance E e ( mW/cm2 ) 5 1 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 5-a Collector Current vs. Collector-emitter Voltage (PT4800 ) 0.6 Fig. 5-b Collector Current vs. Collector-emitter Voltage (PT4800F/PT4850F ) 1.2 T a = 25C 1.0 0.4 E e = 1.0mW/cm 0.3 Collector current I C ( mA ) 0.5 Collector current I C ( mA ) T a = 25C E e = 3mW/cm2 2 0.75mW/cm2 0.2 0.5mW/cm2 0.1 2.5mW/cm 2 0.8 2.0mW/cm2 0.6 1.5mW/ cm 2 0.4 0.8mW/cm 2 1.0mW/cm 2 0.2 0.25mW/cm2 0.1mW/cm2 0 0 5 0.6mW/cm 2 10 15 20 25 30 Collector-emitter voltage V CE ( V ) 0 0 35 Fig. 5-c Collector Current vs. Collector-emitter Voltage (PT4810 ) 2.4 2 4 6 8 10 12 Collector-emitter voltage V CE ( V ) Fig. 5-d Collector Current vs. Collector-emitter Voltage (PT4810F ) 1.2 T a = 25C ( mA ) 1.0 C 1.6 Collector current I Collector current I C ( mA ) T a = 25C E e = 0.2mW/cm2 2.0 0.15mW/cm2 1.2 0.1mW/cm2 0.8 0.08mW/cm2 0.06mW/cm2 0.04mW/cm2 0.4 0 0 1 2 3 4 Collector-emitter voltage V 5 (V) 0.2mW/cm2 0.8 0.15mW/cm2 0.6 0.4 0.1mW/cm2 0.08mW/cm2 0.06mW/cm2 0.02mW/cm2 0.04mW/cm2 0 0 6 1 2 3 4 Collector-emitter voltage V 0.02mW/cm2 CE 5 (V) 6 Fig. 7-a Response Time vs. Load Resistance ( PT4800/PT4800F/PT4850F ) Fig. 6 Spectral Sensitivity 100 100 T a = 25C 50 80 PT4800 Response time t r , t f ( s ) Relative sensitivity ( % ) Ee = 0.2 CE 14 60 PT4810 PT4800F PT4801F PT4850F 40 V CE = 2V I C = 2mA T a = 25C 20 tr tf 10 5 t f tr 20 2 0 400 500 600 700 800 900 Wavelength ( nm ) 1000 1100 1 0.1 0.2 1 0.5 2 Load resistance R L ( k ) 5 10 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 7-b Response Time vs. Load Resistance ( PT4810 / PT4810F ) Test Circuit for Response Time ( PT4800 / PT4800F/ PT4850F ) 1000 Response time ( s ) VCE = 2V I C = 10mA T a = 25C tr 100 Output Input tf VCC Output td 10 1 90% RL 10% ts 10 tr 100 1000 Load resistance R L ( ) tf 5000 Test Circuit for Response Time ( PT4810 / PT4810F ) ( Ta = 25C) Fig. 8 Sensitivity Diagram - 20 - 10 0 + 10 + 20 100 + 30 - 30 Output Input - 40 90% RL VCC Relative sensitivity ( % ) 80 - 50 Output 60 + 40 40 + 50 10% - 60 + 60 ts td tf tr 20 - 70 + 70 - 80 + 80 - 90 0.8 0.6 0.4 1.2 2.0mA 1.4 1.0mA 1.6 1.5mA 1.8 0.5mA 1.0mA 1.5mA 0.5mA 1.0 1.0 0.8 0.6 0.4 0.2 0.2 0 0.1 2.0 Collector-emitter saturation voltage V CE(sat) ( V ) 1.2 0.1mA 1.4 I C = 0.05mA Collector-emitter saturation voltage V CE(sat) 1.8 1.6 2.2 T a = 25C 2.0 0.1mA 2.2 Fig. 9-b Collector-emitter Saturation Voltage vs. Irradiance ( PT4800F/ PT4850F ) I C = 0.05mA Fig. 9-a Collector-emitter Saturation Voltage vs. Irradiance (PT4800 ) + 90 0 Angular displacement 0.2 0.5 2 1 Irradiance E e ( mW/cm2 ) 5 10 T a = 25C 0 0.1 0.2 0.5 2 5 1 Irradiance E e ( mW/cm2 ) 10 20 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 9-c Collector-emitter Saturation Voltage (PT4810 ) vs. Irradiance Fig.9-d Collector-emitter Saturation Voltage (PT4810F ) vs. Irradiance 2.2 1.2 1.0 0.8 0.6 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 Irradiance E e ( mW/cm 2 ) 1 1.6 6mA 8mA 4mA 2mA 1mA 1.4 1.2 1.0 0.8 0.6 0.4 0 0.01 0.02 2 Fig.10-a Relative Output vs. Distance (PT4800F ) ( Emitter : GL4800 ) 100 100 50 50 20 20 10 5 2 2 5 2 1 0.5 0.5 Please refer to the chapter " Precautions for Use" 1 10 1 0.5 1 2 5 10 20 50 Distance between emitter and detector d ( mm ) 0.05 0.1 0.2 0.5 Irradiance E e ( mW/cm2) Fig.10-b Relative Output vs. Distance (PT4810F ) (Emitter : GL4800 ) Relative output ( % ) Relative output ( % ) 1.8 0.2 0.2 I C = 0.5mA 6mA 8mA 4mA 1.4 0.2 T a = 25C 2.0 Collector-emitter saturation voltage V CE(sat ) ( V) 1.6 2mA 1.8 1mA T a = 25C I C = 0.5mA Collector-emitter saturation voltage V CE(sat ) ( V) 2.0 0.2 0.5 1 2 5 10 20 50 Distance between emitter and detector d ( mm ) Application Circuits NOTICE The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). Contact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications other than those recommended by SHARP or when it is unclear which category mentioned above controls the intended use. If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 115