PT4800/PT4800F/PT4810/PT4810F/PT4850F
PT4800/PT4800F/PT4810
PT4810F/PT4850F
■Absolute Maximum Ratings (Ta = 25˚C)
■Outline Dimensions
*1 For 3 seconds at the position of 1.8mm from the bottom face of resin package
Thin Type Phototransistor
■Features
■Applications
PT4800F/PT4810F/PT4850F
PT4800/PT4800F/PT4850F
PT4810/PT4810F
4. Thin type
2. Floppy disk drives
121
2
2
1
1.5
0.8
2-0.25
0.7
PT4810/F
2.54
1.0
3.5
1.7
1.8
0.8
0.8
2-0.45
1. VCRs
PT4800/F
PT4850F
2-0.9
Rest of gate
2-C0.5
❈Epoxy resin
3.0
1.6
PT4810F
Mark(blue)
PT4850F
Mark(black)
1 Emitter
2 Collector
PT4800
PT4810
F type
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
“In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
1. Thin type package (Thickness : 1.5mm )
2. Visible light cut-off type :
3. Single phototransistor output :
Darlington phototransistor output:
(Unit : mm)
❈Epoxy resin
Transparent resin
Transparent blue resin
Visible light cut-off resin (black )
Parameter Symbol Rating Unit
Collector-emitter voltage VCEO 35 V
Emitter-collector voltage VECO 6V
Collector current PT4800/PT4800F/PT4850F
IC20 mA
PT4810/PT4810F 50
Collector power dissipation PC75 mW
Operating temperature T opr
- 25 to +85
˚C
Storage temperature T stg
- 40 to +85
˚C
*1Soldering temperature T sol 260 ˚C
:0.3MAX
Burry's dimensions
:0.3
MAX
17.5±0.5
0.5MIN.
φ0.8
PT4800/PT4800F/PT4810/PT4810F/PT4850F
■Electro-optical Characteristics
*2 E e : Irradiance by CIE standard light source A (tungsten lamp)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2Collector current
PT4800
IC
Ee= 1mW/cm2
VCE =5V
0.12 0.4 1.0 mA
PT4800F 0.08 0.25 0.75 mA
PT4850F 0.12 - 0.56 mA
PT4810 Ee= 0.1mW/cm20.45 - 7.0 mA
PT4810F 0.27 - 6.0 mAVCE =2V
Collector dark current PT4800/PT4800F ICEO Ee= 0, VCE = 20V - - 0.1 m A
PT4850F
PT4810/PT4810F Ee= 0, VCE = 10V - - 1.0 m A
voltage
PT4800/PT4800F VCE
(sat)
Ee=10mW/cm2- - 0.4 V
PT4850F IC=0.5mA
PT4810/PT4810F Ee= 1mW/cm2- - 1.0 V
IC= 2.5mA
Collector-emitter breakdown voltage BVCEO IC= 0.1mA 35 - - V
Ee=0
Emitter-collector breakdown voltage BVECO IE= 0.01mA 6--V
E
e
=0
Peak sensitivity
wavelength
PT4800
λp
- 800 - nm
PT4800F - 860 - nm
PT4850F -
-860 - nm
PT4810 - 800 - nm
PT4810F - 860 - nm
tr
VCE = 2V, IC= 2mA - 3.0 - µs
RL=100Ω
VCE =2V
I
C=10mA
RL=100Ω- 80 400 µs
tf
VCE = 2V, IC= 2mA - 3.5 - µs
RL= 100Ω
VCE =2V
I
C= 10mA
RL=100Ω- 70 350 µs
Half intensity angle ∆θ -
-±35 -
PT4800/PT4800F
PT4850F
PT4810/PT4810F
PT4800/PT4800F
PT4850F
PT4810/PT4810F
*2
Collector-emitter saturation
(Ta = 25˚C)
-25 0 25 50 75 100
0
20
40
60
80
100
85 0 25 50 75 100
2
5
2
5
2
5
2
5
Collector power dissipation PC (mW)
Ambient temperature T a (˚C)Ambient temperature T a (˚C)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector dark current I CEO (A)
(PT4800/PT4800F/PT4850F )
Response
time
Rise time
Fall time
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
VCE = 20V
10-6
10-7
10-8
10-9
10-10
˚
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Ambient temperature Ta (˚C)
-25 0 25 50 75 100
10-11
5
10-10
5
10-9
5
10-8
5
10-7
5
10-6
5
10-5
5
10-4
5= 10V
40
0
0
20
10 20 30 40 7050 60
160
100
60
80
120
140
Ambient temperature Ta (˚C)
Relative collector current (%)
150
125
100
75
50
-25
Relative collector current (%)
500 25 75 100
Collector current I C (mA)
110
1
10
0.1 0.2 0.5 2 5 20
0.1
0.2
0.5
2
5
20
Collector current I C (mA)
110
0.1
1
0.1 0.2 0.5 2 5 20
0.05
0.2
0.5
2
5
10
Collector current I C (mA)
1
25 25
0.1
0.2
0.5
2
5
PT4810 PT4810F
(PT4800/PT4800F/PT4850F )
Collector dark current I CEO (A)
Ambient temperature Ta(˚C)
(PT4810/PT4810F )
(PT4810/PT4810F )
(PT4810/PT4810F )(PT4800)
(PT4800F/PT4850F )
Irradiance E e(mW/cm2)
Irradiance Ee (mW/cm2)
Irradiance Ee (mW/cm2)
Fig. 2-b Collector Dark Current vs. Ambient
Temperature Fig. 3-a Relative Collector Current vs.
Ambient Temperature
Fig. 4-a Collector Current vs.
Irradiance
Fig. 3-b Relative Collector Current vs.
Ambient Temperature
Fig. 4-b Collector Current vs. Irradiance Fig. 4-c Collector Current vs. Irradiance
VCE
Ee= 1mW/cm 2
VCE =5V
VCE =5V
T
a= 25˚C
Ee= 0.1mW/cm 2
VCE =2V
VCE =5V
T
a= 25˚C
VCE =2V
T
a= 25˚C
10-1
175
1
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Collector-emitter voltage V CE (V)
Collector current I C(mA)
0 5 10 15 20 25 30 35
0
0.1
0.2
0.3
0.4
0.5
0.6
Collector-emitter voltage V CE (V)
Collector current I C (mA)
02468101214
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector current I C (mA)
0123456
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector current I C (mA)
0123456
0
0.2
0.4
0.6
0.8
1.0
1.2
Wavelength λ (nm )
Relative sensitivity (%)
400 500 600 700 800 900
0
20
40
60
80
100
PT4800
PT4810 PT4800F
PT4801F
PT4850F
1
10
0.1 0.2 0.5 2 5 10
1
2
5
20
50
100
Collector-emitter voltage V CE (V)Collector-emitter voltage V CE (V)
)
(PT4800 ) (PT4800F/PT4850F )
(PT4810 ) (PT4810F )
Response time t r, t f (µs)
Fig. 5-a Collector Current vs.
Collector-emitter Voltage
0.1mW/cm
2
Fig. 5-b Collector Current vs.
Collector-emitter Voltage
Fig. 5-c Collector Current vs.
Collector-emitter Voltage
Fig. 6 Spectral Sensitivity
Fig. 5-d Collector Current vs.
Collector-emitter Voltage
Ta= 25˚C
E
e
= 1.0mW/cm
2
0.75mW/cm
2
0.5mW/cm
2
0.25mW/cm
2
Ta= 25˚C
Ee= 3mW/cm2
2.5mW/cm2
2.0mW/cm2
1.5mW/cm2
1.0mW/cm20.8mW/cm2
0.6mW/cm2
Ta= 25˚C
Ee= 0.2mW/cm2
0.15mW/cm2
0.1mW/cm2
0.08mW/cm2
0.06mW/cm2
0.04mW/cm
2
0.02mW/cm
2
Ta= 25˚C
Ee= 0.2mW/cm2
0.15mW/cm2
0.1mW/cm2
0.08mW/cm2
0.06mW/cm2
0.04mW/cm20.02mW/cm2
Ta= 25˚C
11001000
VCE =2V
I
C= 2mA
Ta= 25˚C
tftr
tr
tf
PT4800/PT4800F/PT4850F
(
Fig. 7-a Response Time vs. Load Resistance
Load resistance R L (kΩ)
L (Ω)
Response time (µs)
10 100
10
100
1
tr
Output
Test Circuit for Response Time
VCC RL
Output Input
10%
tf
90%
Angular displacement θ
0
Test Circuit for Response Time
tdtr
Output
VCC
Output
RL
Input
tf
10%
ts
90%
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.1 0.2 0.5 2 5 10
0.1mA
0.5mA
1.0mA
1.5mA
110
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.1 0.2 0.5 2 5 20
0.1mA
0.5mA
1.0mA
2.0mA
1.5mA
(Ta= 25˚C)
- 80˚
- 90˚
- 60˚
- 70˚
- 50˚
- 40˚
- 30˚
Relative sensitivity (%)
+ 80˚
+ 90˚
+ 10˚
80
20
40
60
- 10˚- 20˚ 0˚
100
+ 70˚
+ 60˚
+ 50˚
+ 40˚
+ 20˚
+ 30˚
(PT4800 )(
PT4800F/ PT4850F)
(PT4810/ PT4810F)(
PT4800/ PT4800F/ PT4850F)
(PT4810/ PT4810F)
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Irradiance E e (mW/cm2)
Irradiance E e (mW/cm2)
Collector-emitter saturation voltage
VCE(sat)
Collector-emitter saturation voltage
VCE(sat) (V)
Fig. 8 Sensitivity Diagram
Fig. 9-a Collector-emitter Saturation
Voltage vs. Irradiance Fig. 9-b Collector-emitter Saturation
Voltage vs. Irradiance
VCE =2V
I
C= 10mA
Ta= 25˚C
trtf
td
ts
Ta= 25˚C
IC= 0.05mA
T
a
= 25˚C
IC= 0.05mA
1000
1000 5000
Fig. 7-b Response Time vs. Load Resistance
Load resistance R
0.1 1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.01 0.02 0.05 0.2 0.5 2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.20.020.01
00.05 0.1 0.5 1 2
1mA
2mA
4mA
6mA
8mA
1mA
2mA
4mA
6mA
8mA
Relative output (%)
110
1
10
0.2 0.5 2 5 20 50
0.5
2
5
20
50
100
Relative output (%)
0.2
1
0.5
2
0.5 1 2 5 10 20 50
10
5
20
100
50
(PT4800F ) (Emitter :GL4800 )
PT4800/PT4800F/PT4810/PT4810F/PT4850F
(PT4810 ) vs. Irradiance (PT4810F )
(PT4810F ) (
Irradiance E e (mW/cm2)
Irradiance E e (mW/cm2)
Collector-emitter saturation voltage
VCE(sat) (V)
Collector-emitter saturation voltage
VCE(sat) (V)
Emitter :GL4800)
Fig. 9-c Collector-emitter Saturation Voltage
vs. Irradiance
Fig.10-b Relative Output vs. DistanceFig.10-a Relative Output vs. Distance
Distance between emitter and detector d (mm)Distance between emitter and detector d (mm)
Ta= 25˚C
IC= 0.5mA
Ta= 25˚C
IC= 0.5mA
●Please refer to the chapter “ Precautions for Use”
Fig.9-d Collector-emitter Saturation Voltage
115
Application Circuits
NOTICE
●The circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
●Observe the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
●If the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
●This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
means, electronic or mechanical, for any purpose, in whole or in part, without the express written
permission of SHARP. Express written permission is also required before any use of this publication
may be made by a third party.
●Contact and consult with a SHARP representative if there are any questions about the contents of this
publication.
