MRF8S9260HR3 MRF8S9260HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz 18.8 36.0 6.3 --39.5
940 MHz 18.7 37.0 6.2 --38.6
960 MHz 18.6 38.5 5.9 --37.1
Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ≃260 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (2,3) TJ225 C
CW Operation @ TC=25C
Derate above 25C
CW 280
1.5
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (3,4) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 75 W CW, 28 Vdc, IDQ = 1800 mA
Case Temperature 80C, 265 W CW, 28 Vdc, IDQ = 1100 mA
RJC
0.37
0.31
C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S9260H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
920--960 MHz, 75 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S9260HR3
MRF8S9260HSR3
CASE 465C--03
NI--880S
MRF8S9260HSR3
CASE 465B--04
NI--880
MRF8S9260HR3
Freescale Semiconductor, Inc., 2009, 2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1C
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 400 Adc)
VGS(th) 1.5 2.3 3Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1700 mAdc, Measured in Functional Test)
VGS(Q) 2.4 3.1 3.9 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=4.4Adc)
VDS(on) 0.1 0.2 0.3 Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1700 mA, Pout = 75 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 17.5 18.6 20.0 dB
Drain Efficiency D36.0 38.5 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.5 5.9 —dB
Adjacent Channel Power Ratio ACPR —--37.1 --35.0 dBc
Input Return Loss IRL — -- 1 4 -- 9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1700 mA, Pout =75WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dB)
IRL
(dB)
920 MHz 18.8 36.0 6.3 --39.5 -- 1 6
940 MHz 18.7 37.0 6.2 --38.6 -- 1 8
960 MHz 18.6 38.5 5.9 --37.1 -- 1 4
1. Part internally matched both on input and output.
(continued)
MRF8S9260HR3 MRF8S9260HSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1700 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —260 — W
IMD Symmetry @ 130 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—10 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —50 —MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =75WAvg. GF—0.2 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.024 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) (1)
P1dB —0.0075 —dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
Figure 1. MRF8S9260HR3(HSR3) Test Circuit Component Layout
*C16 is mounted vertically.
C21
C19
C17
C15
C14
C13
C12
C11
C16*C18
C20
C10
R2
C8
C7
R1
C1 C2 C3
C4
C5
C6 C9
CUT OUT AREA
MRF8S9260H
Rev. 1
Table 5. MRF8S9260HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C6, C9, C12, C16 36 pF Chip Capacitors ATC100B360JT500XT ATC
C2 0.4 pF Chip Capacitor ATC100B0R4BT500XT ATC
C3 4.7 pF Chip Capacitor ATC100B4R7BT500XT ATC
C4, C5 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC
C7 4.7 F, 50 V Chip Capacitor C4532X5R1H475MT TDK
C8, C13, C14, C19, C20 10 F, 50 V Chip Capacitors C5750X5R1H106MT TDK
C10, C11 5.6 pF Chip Capacitors ATC100B5R6BT500XT ATC
C15, C21 470 F, 63 V Electrolytic Capacitors 477KXM063M Illinois Capacitor
C17 4.3 pF Chip Capacitor ATC100B4R3BT500XT ATC
C18 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
R1 10 , 1/4 W Chip Resistor CRCW120610R0JKEA Vishay
R2 0, 3.5 A Chip Resistor CRCW12060000Z0EA Vishay
PCB 0.030,r=3.5 RF--35 Taconic
MRF8S9260HR3 MRF8S9260HSR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
900
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 75 Watts Avg.
-- 11
-- 1 5
16
21
-- 4 3
42
40
38
-- 3 5
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
20.5
20
19
910 920 930 940 950 960 970 980
-- 3 3
-- 1 9
PARC (dB)
-- 2
0
-- 2 . 5
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 250 W (PEP), IDQ = 1700 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
35 60 160
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
-- 1 d B = 6 4 W
D
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
21
Gps, POWER GAIN (dB)
20
18
16 VDD =28Vdc,I
DQ = 1700 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
-- 2 d B = 8 8 W
--3 dB = 122 W
-- 9
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
85 110
ACPR
135
Gps
PARC
16.5
17
17.5
18
18.5
19.5 36
34
-- 3 7
-- 3 9
-- 4 1
-- 1 3
-- 1 7
-- 1 . 5
-- 1
-- 0 . 5
VDD =28Vdc,P
out =75W(Avg.)
IDQ = 1700 mA, Single--Carrier W--CDMA
19
17
15
Gps
D
IM3--L
IRL PARC
ACPR
6
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 5
14
20
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
10 100 300
10
-- 5 0
ACPR (dBc)
19
18
-- 2 0
-- 3 0
Figure 6. Broadband Frequency Response
0
24
600
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1700 mA
12
8
700
GAIN (dB)
20
800 900 1000 1100 1200
IRL
-- 1 8
0
-- 3
-- 6
-- 9
-- 1 2
IRL (dB)
-- 1 5
17
16
15 -- 4 5
-- 4 0
-- 3 5
920 MHz
960 MHz
920 MHz
4
16
Gps
940 MHz
960 MHz
VDD =28Vdc,I
DQ = 1700 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
960 MHz
940 MHz
920 MHz
940 MHz
D
Gain
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
MRF8S9260HR3 MRF8S9260HSR3
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQ = 1700 mA, Pout =75WAvg.
f
MHz
Zsource
Zload
820 2.25 -- j2.59 1.93 -- j1.63
840 2.21 -- j2.51 1.91 -- j1.45
860 2.16 -- j2.46 1.90 -- j1.28
880 2.11 -- j2.40 1.90 -- j1.14
900 1.98 -- j2.37 1.91 -- j1.02
920 1.87 -- j2.29 1.90 -- j0.91
940 1.75 -- j2.23 1.89 -- j0.83
960 1.61 -- j2.14 1.87 -- j0.76
980 1.46 -- j2.03 1.84 -- j0.69
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
40
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ = 1700 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
56
54
52
41
57
55
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
53
58
60
39383733 443635
59
51
50
34 42 43
940 MHz
Ideal
Actual
920 MHz
960 MHz
940 MHz 960 MHz
920 MHz
61
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
920 363 55.6 447 56.5
940 363 55.6 417 56.2
960 363 55.6 437 56.4
Test Impedances per Compression Level
f
(MHz)
Zsource
Zload
920 P1dB 0.94 -- j2.68 2.19 -- j2.10
940 P1dB 1.18 -- j2.65 2.18 -- j2.52
960 P1dB 1.24 -- j3.10 2.72 -- j2.11
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9260HR3 MRF8S9260HSR3
9
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
MRF8S9260HR3 MRF8S9260HSR3
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
MRF8S9260HR3 MRF8S9260HSR3
13
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Dec. 2009 Initial Release of Data Sheet
1Feb. 2012 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 9--10. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 11--12. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
14
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
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Document Number: MRF8S9260H
Rev. 1, 2/2012
