© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 5
1Publication Order Number:
NCV8403/D
NCV8403, NCV8403A
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
NCV8403/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
•Short Circuit Protection
•Thermal Shutdown with Automatic Restart
•Over Voltage Protection
•Integrated Clamp for Inductive Switching
•ESD Protection
•dV/dt Robustness
•Analog Drive Capability (Logic Level Input)
•AEC−Q101 Qualified and PPAP Capable
•NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•These Devices are Pb−Free and are RoHS Compliant
Typical Applications
•Switch a Variety of Resistive, Inductive and Capacitive Loads
•Can Replace Electromechanical Relays and Discrete Circuits
•Automotive / Industrial
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
http://onsemi.com
VDSS
(Clamped) RDS(on) TYP ID MAX
(Limited)
42 V 53 mW @ 10 V 15 A
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8403 or 8403A
G or G= Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
xxxxxG
G
23
4
GATE
DRAIN
SOURCE
DRAIN
23
4
12
3
4
DPAK
CASE 369C
YWW
xxxxxG
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc
Gate−to−Source Voltage VGS "14 Vdc
Drain Current Continuous IDInternally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD1.13
1.56
W
Thermal Resistance − SOT−223 Version
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Thermal Resistance − DPAK Version
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
RqJC
RqJA
RqJA
12
110
80
2.5
95
50
°C/W
Single Pulse Inductive Load Switching Energy
(VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W)
EAS 470 mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms) VLD 55 V
Operating Junction Temperature TJ−40 to 150 °C
Storage Temperature Tstg −55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
DRAIN
SOURCE
GATE VDS
VGS
ID
IG
+
−
+
−
Figure 1. Voltage and Current Convention
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3
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C) (Note 3)
V(BR)DSS 42
40
46
45
51
51
Vdc
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3)
IDSS
−
−
0.6
2.5
5.0
−
mAdc
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSS −50 125 mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th) 1.0
−
1.7
5.0
2.2
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
RDS(on)
−
−
53
95
68
123
mW
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
RDS(on)
−
−
63
105
76
135
mW
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
VSD −0.95 1.1 V
SWITCHING CHARACTERISTICS (Note 3)
Turn−ON Time (10% VIN to 90% ID)VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
tON 44 msms
Turn−OFF Time (90% VIN to 10% ID) tOFF 84
Turn−ON Time (10% VIN to 90% ID)VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
tON 15
Turn−OFF Time (90% VIN to 10% ID) tOFF 116
Slew−Rate ON (20% VDS to 50% VDS)Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
−dVDS/dtON 2.43 V/ms
Slew−Rate OFF (80% VDS to 50% VDS) dVDS/dtOFF 0.83
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit VGS = 5.0 V, VDS = 10 V
VGS = 5.0 V, TJ = 150°C (Note 3)
ILIM 10
5.0
15
10
20
15
Adc
Current Limit VGS = 10 V, VDS = 10 V
VGS = 10 V, TJ = 150°C (Note 3)
ILIM 12
8.0
17
13
22
18
Adc
Temperature Limit (Turn−off) VGS = 5.0 Vdc (Note 3) TLIM(off) 150 175 200 °C
Thermal Hysteresis VGS = 5.0 Vdc DTLIM(on) −15 −°C
Temperature Limit (Turn−off) VGS = 10 Vdc (Note 3) TLIM(off) 150 165 185 °C
Thermal Hysteresis VGS = 10 Vdc DTLIM(on) −15 −°C
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 mA
VGS = 10 V ID = 1.0 A 400
Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.1 mA
VGS = 10 V, VDS = 10 V 0.6
Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.45 mA
VGS = 10 V, VDS = 10 V 1.5
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3)
Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 − − V
Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
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4
TYPICAL PERFORMANCE CURVES
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single−Pulse Maximum Switching
Energy vs. Load Inductance
L (mH) L (mH)
10010
1
10
10010
100
1000
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single−Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms) TIME IN CLAMP (ms)
101
1
10
100
101
100
1000
ILmax (A)
Emax (mJ)
ILmax (A)
Emax (mJ)
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
150°C
VDS (V) VGS (V)
543210
0
5
10
20
25
4.03.53.02.52.01.51.0
0
5
10
15
20
ID (A)
ID (A)
15
VGS = 2.5 V
3 V
4 V
5 V
6 V 7 V 8 V 9 V
10 V
−40°C
25°C
100°C
Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics
Ta = 25°C
VDS = 10 V
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5
TYPICAL PERFORMANCE CURVES
Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current
VGS (V) ID (A)
RDS(on) (mW)
RDS(on) (mW)
−40°C
25°C
100°C
150°C
−40°C, VGS = 5 V
−40°C, VGS = 10 V
25°C, VGS = 5 V
25°C, VGS = 10 V
100°C, VGS = 5 V
100°C, VGS = 10 V
150°C, VGS = 5 V
Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source
Voltage
T (°C) VGS (V)
1201008040200−20−40
0.50
0.75
1.00
1.25
1.50
1.75
2.00
NORMALIZED RDS(on)
ILIM (A)
60
−40°C
25°C
100°C
140
VGS = 5 V
VGS = 10 V
25
50
75
100
125
150
345678910
20
30
50
60
70
80
90
100
13 5 7 9
150°C, VGS = 10 V
5
10
15
20
25
56 78 910
150°C
ID = 3 A
246810
40
ID = 5 A
VDS = 10 V
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
TJ (°C) VDS (V)
40353025201510
0.00001
0.001
0.01
0.1
1
10
100
ILIM (A)
IDSS (mA)
−40°C
25°C
100°C
150°C
5
10
15
20
25
−40 −20 0 20 40 60 80 100 120 140
VGS = 5 V
VGS = 10 V
VDS = 10 V VGS = 0 V
0.0001
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6
TYPICAL PERFORMANCE CURVES
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Source−Drain Diode Forward
Characteristics
T (°C) IS (A)
1401006040200−20−40
0.6
0.7
0.8
0.9
1.0
1.1
1.2
87654321
0.5
0.6
0.7
0.8
0.9
1.0
NORMALIZED VGS(th) (V)
VSD (V)
80 120 910
−40°C
25°C
100°C
150°C
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
VGS (V) VGS (V)
109876543
0
50
100
150
250
109876543
0
0.5
1.0
1.5
3.0
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
td(off)
td(on)
tf
tr
−dVDS/dt(on)
dVDS/dt(off)
ID = 1.2 mA
VDS = VGS
200
VGS = 0 V
VDD = 25 V
ID = 5 A
RG = 0 W
2.0
2.5
VDD = 25 V
ID = 5 A
RG = 0 W
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
RG (W)R
G (W)
2000150010005000
0
25
50
75
100
2000150010005000
0.50
0.75
1.00
1.25
2.00
2.50
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
td(on), VGS = 5 V
td(off), VGS = 5 V
tr, VGS = 5 V
tf, VGS = 5 V
td(on), VGS = 10 V
td(off), VGS = 10 V
tr, VGS = 10 V
tf, VGS = 10 V
1.50
1.75
2.25
−dVDS/dt(on), VGS = 5 V
dVDS/dt(off), VGS = 5 V
−dVDS/dt(on), VGS = 10 V
dVDS/dt(off), VGS = 10 V
VDD = 25 V
ID = 5 A
VDD = 25 V
ID = 5 A
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7
TYPICAL PERFORMANCE CURVES
0.01
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
R(t) °C/W
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
0.000001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
R(t) °C/W
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
0.000001
COPPER HEAT SPREADER AREA (mm2)
RqJA (°C/W)
PCB Cu thickness, 1.0 oz
25
50
75
100
125
150
300 400 500 600 700 800
Figure 20. RqJA vs. Copper Area − SOT−223
0 100 200
PCB Cu thickness, 2.0 oz
COPPER HEAT SPREADER AREA (mm2)
RqJA (°C/W)
PCB Cu thickness, 1.0 oz
25
50
75
100
125
150
300 400 500 600 700 800
Figure 21. RqJA vs. Copper Area − DPAK
0 100 200
PCB Cu thickness, 2.0 oz
Figure 22. Transient Thermal Resistance − SOT−223 Version
Figure 23. Transient Thermal Resistance − DPAK Version
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8
TEST CIRCUITS AND WAVEFORMS
DUT
G
D
S
RL
VDD
IDS
VIN
Figure 24. Resistive Load Switching Test Circuit
RG
+
−
td(ON) tr
VIN
IDS
td(OFF)
tf
10%
10%
90%
90%
Figure 25. Resistive Load Switching Waveforms
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9
TEST CIRCUITS AND WAVEFORMS
VDD
IDS
VIN
L
VDS
tp
Figure 26. Inductive Load Switching Test Circuit
DUT
G
D
S
RG +
−
0 V
5 V
Tav
VIN
IDS
VDS
Tp
VDS(on)
Ipk
0
VDD
V(BR)DSS
Figure 27. Inductive Load Switching Waveforms
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10
ORDERING INFORMATION
Device Package Shipping†
NCV8403STT1G SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8403STT3G SOT−223
(Pb−Free)
4000 / Tape & Reel
NCV8403DTRKG DPAK
(Pb−Free)
2500 / Tape & Reel
NCV8403ASTT1G SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8403ASTT3G SOT−223
(Pb−Free)
4000 / Tape & Reel
NCV8403ADTRKG DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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11
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
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12
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NCV8403/D
PUBLICATION ORDERING INFORMATION
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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