NCV8403, NCV8403A Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 NCV8403/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. http://onsemi.com VDSS (Clamped) RDS(on) TYP ID MAX (Limited) 42 V 53 mW @ 10 V 15 A Drain Features * * * * * * * * * * Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) AEC-Q101 Qualified and PPAP Capable NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free and are RoHS Compliant Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Sense Source Typical Applications * Switch a Variety of Resistive, Inductive and Capacitive Loads * Can Replace Electromechanical Relays and Discrete Circuits * Automotive / Industrial Current Limit 4 1 2 DRAIN 4 3 SOT-223 CASE 318E STYLE 3 4 1 2 MARKING DIAGRAM 3 DPAK CASE 369C AYW xxxxxG G 1 2 3 SOURCE GATE DRAIN YWW xxxxxG A = Assembly Location Y = Year W, WW = Work Week xxxxx = V8403 or 8403A G or G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 5 1 Publication Order Number: NCV8403/D NCV8403, NCV8403A MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage Internally Clamped VDSS 42 Vdc Gate-to-Source Voltage VGS "14 Vdc Drain Current Continuous ID Total Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) PD Thermal Resistance - SOT-223 Version Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Thermal Resistance - DPAK Version Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Internally Limited 1.13 1.56 W C/W RqJC RqJA RqJA 12 110 80 RqJC RqJA RqJA 2.5 95 50 Single Pulse Inductive Load Switching Energy (VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W) EAS 470 mJ Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms) VLD 55 V Operating Junction Temperature TJ -40 to 150 C Storage Temperature Tstg -55 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted onto minimum pad size (0.412 square) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (1.127 square) FR4 PCB, 1 oz cu. + ID DRAIN IG + VDS GATE SOURCE VGS - - Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8403, NCV8403A MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 42 40 46 45 51 51 Vdc Vdc - - 0.6 2.5 5.0 - - 50 125 mAdc 1.0 - 1.7 5.0 2.2 - Vdc mV/C - - 53 95 68 123 - - 63 105 76 135 - 0.95 1.1 OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = -40C to 150C) (Note 3) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150C) (Note 3) IDSS Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) IGSS mAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150C) (Note 3) RDS(on) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150C) (Note 3) RDS(on) Source-Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) VSD mW mW V SWITCHING CHARACTERISTICS (Note 3) Turn-ON Time (10% VIN to 90% ID) Turn-OFF Time (90% VIN to 10% ID) Turn-ON Time (10% VIN to 90% ID) Turn-OFF Time (90% VIN to 10% ID) Slew-Rate ON (20% VDS to 50% VDS) VIN = 0 V to 5 V, VDD = 25 V ID = 1.0 A, Ext RG = 2.5 W tON 44 tOFF 84 VIN = 0 V to 10 V, VDD = 25 V, ID = 1.0 A, Ext RG = 2.5 W tON 15 tOFF 116 -dVDS/dtON 2.43 dVDS/dtOFF 0.83 Vin = 0 to 10 V, VDD = 12 V, RL = 4.7 W Slew-Rate OFF (80% VDS to 50% VDS) ms V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5) Current Limit VGS = 5.0 V, VDS = 10 V VGS = 5.0 V, TJ = 150C (Note 3) ILIM 10 5.0 15 10 20 15 Adc Current Limit VGS = 10 V, VDS = 10 V VGS = 10 V, TJ = 150C (Note 3) ILIM 12 8.0 17 13 22 18 Adc VGS = 5.0 Vdc (Note 3) TLIM(off) 150 175 200 C VGS = 5.0 Vdc DTLIM(on) - 15 - C VGS = 10 Vdc (Note 3) TLIM(off) 150 165 185 C VGS = 10 Vdc DTLIM(on) - 15 - C VGS = 5 V ID = 1.0 A IGON Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis GATE INPUT CHARACTERISTICS (Note 3) Device ON Gate Input Current 400 VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL VGS = 5 V, VDS = 10 V mA 0.1 0.6 VGS = 10 V, VDS = 10 V Thermal Limit Fault Gate Input Current mA 50 IGTL mA 0.45 1.5 VGS = 10 V, VDS = 10 V ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 3) Electro-Static Discharge Capability Human Body Model (HBM) ESD 4000 - - V Electro-Static Discharge Capability Machine Model (MM) ESD 400 - - V 3. Not subject to production testing. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. http://onsemi.com 3 NCV8403, NCV8403A TYPICAL PERFORMANCE CURVES 1000 10 TJstart = 25C Emax (mJ) ILmax (A) TJstart = 25C TJstart = 150C 1 10 100 100 10 100 L (mH) L (mH) Figure 2. Single Pulse Maximum Switch-off Current vs. Load Inductance Figure 3. Single-Pulse Maximum Switching Energy vs. Load Inductance 100 1000 TJstart = 25C Emax (mJ) ILmax (A) TJstart = 150C 10 TJstart = 25C TJstart = 150C TJstart = 150C 1 10 TIME IN CLAMP (ms) Figure 4. Single Pulse Maximum Inductive Switch-off Current vs. Time in Clamp Figure 5. Single-Pulse Maximum Inductive Switching Energy vs. Time in Clamp 6V 7V 8V 20 9V -40C VDS = 10 V 10 V 20 ID (A) 1 TIME IN CLAMP (ms) 25 25C 15 5V 4V 15 Ta = 25C 10 100C 10 150C 3V 5 5 0 100 10 ID (A) 1 VGS = 2.5 V 0 1 2 3 4 0 5 1.0 1.5 2.0 2.5 3.0 3.5 VDS (V) VGS (V) Figure 6. On-state Output Characteristics Figure 7. Transfer Characteristics http://onsemi.com 4 4.0 NCV8403, NCV8403A TYPICAL PERFORMANCE CURVES 100 150 150C 125 80 100 100C 75 25C 70 100C, VGS = 5 V 100C, VGS = 10 V 60 25C, VGS = 5 V 50 25C, VGS = 10 V -40C, VGS = 5 V 30 -40C 3 150C, VGS = 10 V 40 50 25 150C, VGS = 5 V 90 RDS(on) (mW) RDS(on) (mW) ID = 3 A 4 5 6 7 8 9 20 10 1 3 2 5 4 -40C, VGS = 10 V 7 9 8 10 6 VGS (V) ID (A) Figure 8. RDS(on) vs. Gate-Source Voltage Figure 9. RDS(on) vs. Drain Current 25 2.00 -40C ID = 5 A 20 1.25 VGS = 5 V 15 100C 1.00 150C 10 VGS = 10 V 0.75 0.50 -40 -20 VDS = 10 V 0 20 60 40 80 100 120 5 140 5 6 7 8 9 T (C) VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate-Source Voltage 25 100 VDS = 10 V VGS = 10 V 150C 1 IDSS (mA) VGS = 5 V 15 0.1 100C 0.01 25C 0.001 10 10 VGS = 0 V 10 20 ILIM (A) 25C 1.50 ILIM (A) NORMALIZED RDS(on) 1.75 -40C 0.0001 5 -40 -20 0 20 40 60 80 100 120 0.00001 140 10 15 20 25 30 35 TJ (C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain-to-Source Leakage Current http://onsemi.com 5 40 NCV8403, NCV8403A TYPICAL PERFORMANCE CURVES 1.0 ID = 1.2 mA VDS = VGS 1.1 VSD (V) 1.0 0.9 0.7 0.8 25C 0.7 100C 0.6 150C 0 20 40 80 60 100 0.5 120 140 DRAIN-SOURCE VOLTAGE SLOPE (V/ms) 100 td(off) 50 tf tr td(on) 4 5 6 7 8 9 10 7 9 8 10 3.0 VDD = 25 V ID = 5 A RG = 0 W 2.5 -dVDS/dt(on) 2.0 1.5 1.0 dVDS/dt(off) 0.5 0 3 4 5 6 7 8 9 10 Figure 16. Resistive Load Switching Time vs. Gate-Source Voltage Figure 17. Resistive Load Switching Drain-Source Voltage Slope vs. Gate-Source Voltage 75 VDD = 25 V ID = 5 A td(off), VGS = 5 V tf, VGS = 5 V tf, VGS = 10 V tr, VGS = 5 V td(on), VGS = 5 V td(on), VGS = 10 V 0 6 VGS (V) td(off), VGS = 10 V 0 5 VGS (V) 100 25 4 Figure 15. Source-Drain Diode Forward Characteristics 150 50 3 Figure 14. Normalized Threshold Voltage vs. Temperature VDD = 25 V ID = 5 A RG = 0 W 3 2 IS (A) 200 0 1 T (C) 250 TIME (ms) -40C VGS = 0 V 0.6 -40 -20 TIME (ms) 0.9 0.8 500 1000 tr, VGS = 10 V 1500 2000 DRAIN-SOURCE VOLTAGE SLOPE (V/ms) NORMALIZED VGS(th) (V) 1.2 2.50 -dVDS/dt(on), VGS = 10 V 2.25 2.00 VDD = 25 V ID = 5 A 1.75 1.50 1.25 dVDS/dt(off), VGS = 5 V 1.00 dVDS/dt(off), VGS = 10 V 0.75 0.50 -dVDS/dt(on), VGS = 5 V 0 500 1000 1500 2000 RG (W) RG (W) Figure 18. Resistive Load Switching Time vs. Gate Resistance Figure 19. Drain-Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance http://onsemi.com 6 NCV8403, NCV8403A 150 150 125 125 RqJA (C/W) RqJA (C/W) TYPICAL PERFORMANCE CURVES 100 PCB Cu thickness, 1.0 oz 75 100 75 PCB Cu thickness, 2.0 oz PCB Cu thickness, 1.0 oz 50 50 25 25 PCB Cu thickness, 2.0 oz 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 COPPER HEAT SPREADER AREA (mm2) COPPER HEAT SPREADER AREA (mm2) Figure 20. RqJA vs. Copper Area - SOT-223 Figure 21. RqJA vs. Copper Area - DPAK 800 1000 R(t) C/W 100 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 PULSE TIME (sec) Figure 22. Transient Thermal Resistance - SOT-223 Version 100 50% Duty Cycle R(t) C/W 10 20% 10% 5% 1 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 23. Transient Thermal Resistance - DPAK Version http://onsemi.com 7 NCV8403, NCV8403A TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT - S IDS Figure 24. Resistive Load Switching Test Circuit 90% VIN 10% td(ON) tr td(OFF) tf 90% 10% IDS Figure 25. Resistive Load Switching Waveforms http://onsemi.com 8 NCV8403, NCV8403A TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT - S tp IDS Figure 26. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 27. Inductive Load Switching Waveforms http://onsemi.com 9 NCV8403, NCV8403A ORDERING INFORMATION Package Shipping NCV8403STT1G SOT-223 (Pb-Free) 1000 / Tape & Reel NCV8403STT3G SOT-223 (Pb-Free) 4000 / Tape & Reel NCV8403DTRKG DPAK (Pb-Free) 2500 / Tape & Reel NCV8403ASTT1G SOT-223 (Pb-Free) 1000 / Tape & Reel NCV8403ASTT3G SOT-223 (Pb-Free) 4000 / Tape & Reel NCV8403ADTRKG DPAK (Pb-Free) 2500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 10 NCV8403, NCV8403A PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L STYLE 3: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 http://onsemi.com 11 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 --- --- 1.75 2.00 7.00 7.30 10 - mm inches MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 --- 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10 NCV8403, NCV8403A PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 12 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8403/D