FEP16AT - FEP16JT
FEP16AT - FEP16JT, Rev. C
2001 Fairchild Semiconductor Corporation
FEP16AT - FEP16JT
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
Low forward voltage drop.
High surge current capacity.
High current capability.
High reliability. TO-220AB
1
2
3
Thermal Characteristics
Symbol
Parameter
Device
Units
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
VF Forward Voltage @ 8.0A 0.95 1.3 1.5 V
trr Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 35 50
ns
IR Reverse Current @ rated VR
TA = 25°C
TA = 100°C
10
500
µA
µA
CT Total Capacitance
VR = 4.0. f = 1.0 MHz 85 60
pF
Symbol
Parameter
Value
Units
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
VRRM Maximum Repetitive Reverse
Voltage 50 100 150 200 300 400 500 600 V
IF(AV) Average Rectified Forward Current,
.375 " lead length @ TA = 100°C 16 A
IFSM Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
200
A
Tstg Storage Temperature R ange -55 to +150 °C
TJ Operating Junction Temperature -55 to +150 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 8.33 W
RθJA Thermal Resistance, Junction to Ambient 15 °C/W
RθJL Thermal Resistance, Junction to Lead 2.2 °C/W
PIN 1
PIN 3
+
CASE
PIN 2
Positive CT
PIN 1
PIN 3
-
CASE
PIN 2
Negative CT
Suffix "A"
PIN 1
PIN 3
AC
CASE
PIN 2
Doubler
Suffix "D"
FEP16AT - FEP16JT, Rev. C
FEP16AT - FEP16JT
2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50
NONINDUCTIVE 50
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
NONINDUCTIVE
50V
(approx)
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+ 0 .5A
0
-0.25A
-1.0A
5/ 10 n s/ cm
0 25 50 75 100 125 150 175
0
4
8
12
16
20
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PH A SE
HALF WAVE
60HZ
RESISTI VE O R
INDUCTIVE LOAD
.375 " (9 .0 m m) LEAD
LENGTHS
Reverse Characteri stics
0 20 40 60 80 100 120 140
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
A
T = 100 C
º
A
12 51020 50100
0
40
80
120
160
200
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
100
Forward Voltage, VF [V]
Forward Current, IF [A]
P ulse Wi dth = 300µ
µµ
µs
2% Duty Cycle
T = 25 C
º
A
FEP16AT-FEP16D T
FEP16FT-FEP16JT
1 2 5 10 20 50 100
40
50
60
70
80
90
100
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
FEP16FT-FEP16JT
FEP16AT-FEP16DT
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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