CDD253NxxPT
Diode-Diode Modules
Type
CDD253N08PT
CDD253N12PT
CDD253N14PT
CDD253N16PT
CDD253N18PT
VRRM
V
800
1200
1400
1600
1800
VRSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM
TVJ=TVJM
TC=100oC; 180o sine
400
253 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
11000
12150
10000
11071
A
IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
596787
605000
490625
500000
A2s
TVJ
TVJM
Tstg
-40...+130
130
-40...+130
oC
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s
3000
3600 V~
MdMounting torque (M6)
Terminal connection torque (M6)
_
5+15%/44+15%
9+15%/80+15% Nm/lb.in.
Weight 940 g
312
i2dt
Typical including screws
__
_ _
DEECorp.
http://store.iiic.cc/
CDD253NxxPT
Diode-Diode Modules
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
Symbol Test Conditions Characteristic Values Unit
V
VFIF=750A; TVJ=25oC 1.25
VTO For power-loss calculations only 0.90 V
rT0.37 m
IRTVJ=TVJM; VR=VRRM 15 mA
TVJ=TVJM
per diode; DC current
per module
RthJC 0.14
0.07
oC/W
per diode; DC current
per module
RthCH 0.04
0.02
oC/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
uC
QS-
IRM - A
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
DEECorp.
http://store.iiic.cc/
CDD253NxxPT
Diode-Diode Modules
DEECorp.
CDD253NxxPT
CDD253NxxPT
CDD253NxxPT
http://store.iiic.cc/
CDD253NxxPT
Diode-Diode Modules
DEECorp.
CDD253NxxPT
CDD253NxxPT
CDD253NxxPT
CDD253NxxPT
http://store.iiic.cc/