CDD253NxxPT Diode-Diode Modules Dimensions in mm (1mm=0.0394") Type 3 1 2 Symbol IFRMS IFAVM CDD253N08PT CDD253N12PT CDD253N14PT CDD253N16PT CDD253N18PT VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Test Conditions TVJ=TVJM TC=100oC; 180o sine Maximum Ratings Unit 400 253 A IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 11000 12150 10000 11071 A i2dt TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 596787 605000 490625 500000 A2s TVJ TVJM Tstg VISOL Md Weight -40...+130 130 -40...+130 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M6) Terminal connection torque (M6) Typical including screws o C 3000 3600 V~ _ _ 5+15%/44+15% _ _ 9+15%/80+15% Nm/lb.in. 940 g DEECorp. http://store.iiic.cc/ CDD253NxxPT Diode-Diode Modules Symbol IR Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 15 mA VF IF=750A; TVJ=25 C 1.25 V VTO For power-loss calculations only 0.90 V TVJ=TVJM 0.37 rT m QS - uC IRM - A RthJC per diode; DC current per module 0.14 0.07 RthCH per diode; DC current per module 0.04 0.02 dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies o C/W o C/W ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits DEECorp. http://store.iiic.cc/ CDD253NxxPT Diode-Diode Modules CDD253NxxPT CDD253NxxPT CDD253NxxPT DEECorp. http://store.iiic.cc/ CDD253NxxPT Diode-Diode Modules CDD253NxxPT CDD253NxxPT CDD253NxxPT CDD253NxxPT DEECorp. http://store.iiic.cc/