IXA4IF1200UC
preliminary
Copack
XPT IGBT
2(C)
3(E)
(G) 1
Part number
IXA4IF1200UC
Marking on Product: X4TAUF
Backside: collector
C25
CE(sat)
VV1.8
CES
9
1200
=
V= V
I= A
Features / Advantages: Applications: Package:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
TO-252 (DPak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20111109aData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
IXA4IF1200UC
preliminary
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collect or current A
9
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
5
V
V
CE(sat)
total power dissipation 45 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient ga te emitte r vo l t a g e
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
9
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.1 mA
0.1
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
12 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
0.4 mJ
0.3 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
12 A
R
thJC
thermal resistance junction to case 2.7 K/W
V
RRM
V1200
max. repetitive rev ers e voltage T = 25°C
VJ
T = 25°C
forward current A
10
A
C
6T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.20
V
VJ
1.90T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
*
mA
VJ
*T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
0.5 µC
5A
350 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
0.1 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case 3K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
3
0.1
3
3
3
3
330
330
330
600
900
-150
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink K/W
R
thCH
thermal resistance case to heatsink K/W
* not applicable, see Ices value above
IGBT
Diode
600 V
V = V
CEmax
900
100
100
100
100
125
125
125
125
125
nA
0.50
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20111109aData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
IXA4IF1200UC
preliminary
Ratings
Z Y Y WW
Logo
Part number
A
ssembly Line
abcdefg
P
r
odu
c
tM
a
r
ki
n
g
IXYS
Date Code
I
X
A
4
IF
1200
UC
Part number
IGBT
XPT IGBT
Gen 1 / std
Copack
TO-252AA (DPak)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C150
virt ua l j un ctio n temp eratu re -40
Weight g0.3
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 20 A
per terminal
125-40
TO-252
(
DPak
)
Similar Part Package Voltage class
IXA4IF1200TC TO-268AA (D3Pak) (2) 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
IXA4IF1200UC 510217Tape & Reel 2500X4TAUFStandard
T
stg
°C150
storage temperature -40
threshold voltage V
mΩ
V
0 max
R
0 max
slope resistance *
1.1
460
1.25
280
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
IGBT Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20111109aData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
IXA4IF1200UC
preliminary
2(C)
3(E)
(G) 1
Outlines TO-252 (DPak)
IXYS reserves the right to change limits, conditions and dimensions. 20111109aData according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
