GaA@As IRED & PHOTO-IC TLP250 (TLP250) TRANSISTOR INVERTER Unit in mm INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE co The Toshiba TLP250 consists of a GaAAs light emitting diode and a integrated photodetector. | This unit is 8-lead DIP package. | TLP250 is suitable for gate driving circuit of IGBT or power MOS | FET. 64 -q q q =f 76240.25 @ Input Threshold Current : Ip=5mA (Max.) @ Supply Current (icc) : 1imA (Max.) 028 ons @ Supply Voitage (Vcc) : 10-35V = @ Output Current (IQ) : 0.5A (Min.) 7.85~ 8.80 => e@ Switching Time(tpLH/tpHL) : 0.548 (Max.) e Isolation Voltage : 2500Vrms (Min.) @ UL Recognized : UL1577, File No. E67349 @ Option (D4) type VDE Approved : DIN VDE0884/ 06.92, Certificate No.76823 Maximum Operating Insulation Voltage : 630VpK JEDEC - Highest Permissible Over Voltage : 4000VpK EIAJ - (Note) When a VDE0884 approved type is needed, TOSHIBA 11-10C1 please designate the Option (D4) Weight : 0.54g Creepage Distance : 6.4mm (Min.) Clearance : 6.4mm (Min.) SCHMATIC PIN CONFIGURATION (TOP VIEW) Iec Voc i0 Ns 1 205 | 7 2+ Vo + > VF > 3C Ne 3 Vo 40 M5 GND 1: NC A 0.14F bypass capcitor must be 5 2: ANODE connected between pin 8 and 5 (See more 5). 3: CATHODE 4: NC TRUTH TABLE 5 : GND Trt Tr2 6 : VQ(OUTPUT) 7: Vo LED |OFF] OFF ON 253 TLP250 (TLP250) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current Ip 20 mA Q | Forward Current Derating (Ta? 70C) Alp/ATa 0.36 mA /C a Peak Transient Forward Curent (Note 1) Ippr 1 A Reverse Voltage VR 5 Vv Junction Temperature (Tj) 125 C H Peak Output Current (Pw 2.5us, f= 15kHZ)(Note 2) IOPH -15 A L Peak Output Current (Pw 2.5s, f* 15kHZ) (Note 2) IOPL +15 A me Ne <7 fe Output Voltage moan Vo = r Supply Voltage Vec = Vv A Output Voltage Derating (Ta2 70C) 4V)/ATa -0.73 VieC Supply Voltage Derating (Ta= 70C) AVoc/ 4Ta 0.73 Vic Junction Temperature (Tj) 125 C Operating Frequency (Note 3) f 25 kHz Operating Temperature Range Topr 20~70 C Storage Temperature Range Tstg ~55~125 C Lead Solder Temperature (10 s) Tsol 260 C Isolation Voltage (AC, lmin., R.H. =60%, Ta=25C) (Note 4) BVs 2500 Vrms Note 1 : Pulse width Pw=1,s, 300pps Note 2: Exporenential Wavefom Note 3. ; Exporenential Wavefom, Iopy= 1.0A (3 2.54s), IopL = +1.0A (5 2.5zs) Note 4 : Device considerd a two terminal device : pins 1,2,3 and 4 shorted together, and pins 5,6,7 and 8 shorted together. Note 5 : A ceramic capacitor (0.1uF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length between capacitor and coupler should not exceed lem. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. | TYP. MAX. UNIT Input Current, ON TR(ON) 7 8 10 mA Input Voltage, OFF VF(OFF) 0 _ 0.8 Vv Supply Voltage Vcc 15 _ 30 [ 20 Vv Peak Output Current IoPpH /IOPL = _ 0.5 A Operating Temperature Topr 20 25 70 | 85 C{TLP250) ELECTRICAL CHARACTERISTICS (Ta = - 20~70C, Unless otherwise specified) TLP250 TEST CHARACTERISTIC SYMBOL| CIR- TEST CONDITION MIN. |TYP.*| MAX.|] UNIT CUIT Input Forward Voltage VRE [Ip=10mA, Ta=25C _ 16} 18 Vv Temperature Coefficient of _ Forward Voltage AVRP/4Ta| |ip=1l0mA _ 2.0| |mvV/C Input Reverse Current IR |VR=5V, Ta=25C _ 10 ph Input Capacitance Cr |V=0, f=1MHz, Ta=25C 45; 250 pF Ip=10mA H Level] IopH | 3 Va gnav -05 | -15) Output Current wee =30V : 7 A ay r= L Level | IOPL 2 Vg_5=2.5V 0.5 2; was Veo,=+15V, Vgr1=-15V H Level] VoH | 4 py 0V 1.2 I Vv =+1 =-15V Threshold Input | Output _ | VFHL cc1=+15V, VEri 0.8 _ _ Voltage H--L Ry,=2000, VQ<0V Supply Voltage Vcc 10 35 Capacitance Vs=0, f=1MHz _ , _ 1.0] 2.0 F (Input-Output) Cs [Ta = 25C P Vs=500V, Ta=25C 10 4 i - _ _ 2 Resistance (Input-Output) Rg R. H. 60% 5x10 10 * All typical values are at Ta=25C (*1) : Duration of Ig time = 50s 255 TLP250 (TLP250) SWITCHING CHARACTERISTICS (Ta = - 20~70C, Unless otherwise specified) Output Vcc=30V, Ta=25C TEST CHARACTERISTIC SYMBOL | CIR- TEST CONDITION MIN. |TYP.* | MAX. | UNIT CUIT : Propagation L-H toLH Ip=8mA _ 0.15 | 0.5 Delay Ti elay Time H-L tpHL 6 Wcci=+15V, VEE1 = 15V 0.15 0.5 us Output Rise Time ty Ry =2000 _ Output Fall Time tr L* - ~ Common Mode Transient : : VCM =600V, Ip=8mA Immunity at High Level CMH 7 _ "ago, 5000} - - Vius Output Voc=30V, Ta=25C Common Mode Transient _ _ Immunity at Low Level cui | 7 CM=800V, Ip=0mA so00| | | Vises * All typical values are at Ta=25C 256 TLP250 {TLP250) TEST CIRCUIT 1: TEST CIRCUIT 2 : iOPL 8 if is if L i] U Vcc L 1] C 4 Ms aL TEST CIRCUIT 3 : [OPH TEST CIRCUIT 4: VOH 0.1uF Yeo] a = O.1uF = HF Vg-6 y F ] TT he | oe Ht IopH VOH aL TH aL TH th | _Tvppy TEST CIRCUIT 5 : Voy VF iff RL Ly fF 4Q] 257 TLP250 (TLP250) TEST CIRCUIT 6 : toLH. toHL. tr. tf U TS J Ur 0.1uF Vv of " = Vo iCC1 Vou 80% | Ry GND rh VoL 80% S oO 5 Cc ru YEEI1 TEST CIRCUIT 7: CMH, CML T | Vcc Vom OT - _,600V 90% VcM 10% tf _ 480(V) CML = ty (us) SW : A(Ip=8mA) P Corer = 4800W) [ MH MH ~ te(us) Vo nV 26V CHL SW : B(Ip=0) CML(CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. 258 TLP250 (TLP250) AVe/ATa ~ IF -2.6 [oe ~ Zz? < mS -24 - ae a i & Se -22 f BS fe i} OB -20 < 5 Se z 3 SS 1s < 5" = Ze &