DATA SH EET
Product specification November 1982
INTEGRATED CIRCUITS
TDA2611A
5 W audio power amplifier
November 1982 2
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
The TDA2611A is a monolithic integrated circuit in a 9-lead single in-line (SIL) plastic package with a high supply voltage
audio amplifier. Special features are:
possibility for increasing the input impedance
single in-line (SIL) construction for easy mounting
very suitable fo r application in mains-fed apparatu s
extremely low number of external components
thermal protection
well defined open loop gain circuitry with simple quiescent current setting and fixed integrated closed loop gain.
QUICK REFERENCE DATA
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B) ; SOT110-1.
Supply voltage range VP6 to 35 V
Repetitive peak output current IORM <1,5 A
Output power at dtot = 10%
V
P = 18 V; RL = 8 ΩPotyp. 4,5 W
V
P = 25 V; RL = 15 ΩPotyp. 5 W
Total harmonic distortion at Po < 2 W; RL = 8 Ωdtot typ. 0,3 %
Input impedance |Zi|typ. 45 kΩ
Total quiescent current at VP = 18 V Itot typ. 25 mA
Sensitivity for Po = 2,5 W; RL = 8 ΩVityp. 55 mV
Operating ambien t temperature Tamb 25 to + 150 °C
Storage temperature Tstg 55 to + 150 °C
November 1982 3
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
RATINGS
Limiting values in acco rdance with the Abs olute Maximum System (IEC 134)
Supply voltage VPmax. 35 V
Non-repetitive peak output current IOSM max. 3 A
Repetitive peak output current IORM max. 1,5 A
Total po we r dissipation see derating curve s Fig. 2
Storage temperature Tstg 55 to + 150 °C
Operating a m bient temperature Tamb 25 to + 150 °C
handbook, full pagewidth
TR4
TR5 TR7
TR2
TR9
TR6
TR8
TR10
TR12
TR11
TR14
D5 C1
D4
D6
D7
D8
D9
D3
TR13
TR15
TR17
TR16
TR18
TR19
TR20
TR21
R1 R4
8
1
5
6
7
R8 R10 R12 R16
R13
R15
R14
R3
R7
R17 R9
TR3TR1
R2 R5 R6 R11
D1
D2
2
4
MGD831
9
Fig.1 Circuit diagram; pin 3 not connec ted.
November 1982 4
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
handbook, full pagewidth
150
8
6
2
0
50 0
Ptot
(W)
Tamb (°C)
100
4
50
MBL006
infinate
heatsink
without
heatsink
Fig.2 Power deratin g c urves.
HEATSINK EXAMPLE
Assume VP = 18 V; RL = 8 Ω; Tamb = 60 °C maximum; Tj = 15 0 °C (max. for a 4 W application into an 8 Ω load, the
maximum dissipation is about 2,2 W).
The thermal resista nc e from junction to ambient can be ex pressed as:
Since Rth j-tab = 11 K/W and Rth tab-h = 1 K/W, Rth h-a = 41 (11 + 1) = 29 K/W.
Rth j-a Rth j-tab Rth tab-h Rth h-a 150 60
22,
---------------------- 41 K/W.==++=
November 1982 5
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
D.C. CHARACTERISTICS
A.C. CHARACTERISTICS
Tamb = 25 °C; VP = 18 V; RL = 8 Ω; f = 1 kHz unless otherwise spec ified; see also Fig. 3
Note
1. Input impedance ca n be increased by ap plying C and R between pins 5 and 9 (see also Figures 6 and 7).
Supply voltage range VP6 to 35 V
Repetitive peak output current IORM <1,5 A
Total quiescent current at VP = 18 V Itot typ. 25 mA
A.F. output powe r at dtot = 10%
V
P = 18 V; RL = 8 ΩPo>4W
typ. 4,5 W
V
P = 12 V; RL = 8 ΩPotyp. 1,7 W
V
P = 8,3 V; RL = 8 ΩPotyp. 0,65 W
V
P = 20 V; RL = 8 ΩPotyp. 6 W
V
P = 25 V; RL = 15 ΩPotyp. 5 W
Total harmonic distortion at Po = 2 W dtot typ. 0,3 %
<1%
Frequency response >15kHz
Input impedance |Zi|typ. 45 kΩ(1)
Noise output voltage at RS = 5 kΩ; B = 60 Hz to 15 kHz Vntyp. 0,2 mV
<0,5 mV
Sensitivity for Po = 2,5 W Vityp. 55 mV
44 to 66 mV
November 1982 6
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
handbook, full pagewidth
MBL007
220
pF
C2
RS
Vi
C1 7
6
5
89
4
1
2
R
C
C6
22 μF
(16 V)
C3
0.1 μFC4
470 μF
(16 V)
C5
0.1 μF
R1
3.3 ΩRL = 8 Ω
0.1 μF
TDA2611A
Vp
Fig.3 Test circuit; pin 3 not connected.
handbook, halfpage
10
0
2
4
6
8
MBL008
1011P
o
(W)
dtot
(%)
10
(2)(1)
Fig.4 Total harmonic distortion as a function of output power.
Typical values
(1) RL=8Ω; VP=18V.
(2) RL=15Ω; VP=25V.
November 1982 7
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
handbook, halfpage
010 Vp (V)
Po
(W)
20 40
15
5
0
10
30
MBL009
RL = 15 Ω
RL = 8 Ω
not guaranteed in
view of IORM = 1,5 A
Fig.5 Output power as a function of supply voltage.
Typical values:
f=1kHz.
dtot =10%.
handbook, full pagewidth
0
3
1
2
MBL010
10 f (Hz)
Zi
(MΩ)
102
a
b
103104105
Fig.6 Input impedance as a function of frequency; curve a for C = 1 μF, R = 0 Ω; curve b for
C = 1 μF, R = 1 kΩ; circuit of Fig. 3; C2 = 10 pF; typical va lues.
November 1982 8
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
handbook, full pagewidth
MBL011
103
102
102103
typ
104105
10
R (Ω)
Zi
(kΩ)
Fig.7 Input impedance as a function of R in circuit o f Fig. 3; C = 1 μF; f = 1 kHz.
handbook, full pagewidth
0
6
2
4
MBL012
102
dtot
(%)
RS (Ω)
103
typ
104105106
Fig.8 Total harmonic distortion as a function of RS in the circuit of Fig. 3; Po = 3,5 W; f = 1 kHz.
November 1982 9
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
handbook, full pagewidth
100
0
5
2,5
MBL013
Ptot
(W)
(2)
(1)
0
50
1021011Po (W)
η
(%)
10
(2)
(1)
Fig.9 Total power dissipation and effic i ency as a functio n of output power.
(1) VP=25V; R
L=15Ω; f = 1 khz.
(2) VP=18V; R
L=8Ω; f = 1 khz.
November 1982 10
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
APPLICATION INFORMATION
handbook, full pagewidth
MBL014
R5 R6
R1
C8
C9
R4
R2
tone
C3
C2 10 nF
7
volume
69
5
8
43
12
100
nF
100
nF
C6
1 μF
C5
22 μFC7
47 μF
C4
100 pF
C1
560 pF
10 Ω
1
kΩ
RL
8 Ω
1MΩ
(log)
1MΩ
(log)
220 kΩ
R3
51
kΩ
220 μF
TDA2611A
Vi
Vp
Fig.10 Ceramic pickup amplifier circuit.
handbook, full pagewidth
0
10
2,5
7,5
5
MBL015
1021011Po (W)
dtot
(%)
(1)
10
(2)
Fig.11 Total harmonic distortion as a function of output power; in circuit of Fig. 10; typical values.
(1) With tone control.
(2) Without tone control.
November 1982 11
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
handbook, full pagewidth
10
5
5
0
MBL016
10
(1)
(2)
f (Hz)
102103104
Po
(dB)
Fig.12 Frequency characteristics of the circuit of Fig. 10; Po relative to 0 dB = 3 W; typical values.
(1) Tone control min. high.
(2) Tone control max. high.
handbook, full pagewidth
5
10
0
5
MBL017
10 f (Hz)
102103104
Po
(dB)
typ
Fig.13 Frequency characteristic of the circuit of Fig. 10; volume control at the top; tone control max. high.
November 1982 12
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
PACKAGE OUTLINE
UNIT AA
max.
2A3b1D1
b2
bcD
(1) E(1) Z
max.
(1)
eLPP
1q1q2
q
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 18.5
17.8 3.7 8.7
8.0
A4
15.8
15.4 1.40
1.14 0.67
0.50 1.40
1.14 0.48
0.38 21.8
21.4 21.4
20.7 6.48
6.20 3.4
3.2
2.54 1
5.9
5.7
4.4
4.2
3.9
3.4 15.1
14.9
Q
1.75
1.55
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
2.75
2.50
SOT110-1 95-02-25
03-03-12
0 5 10 mm
scale
0.25
w
D
E
A
A
c
A2
3
A4
q1q2
L
Q
wM
b
b1
b2
D1
P
q
1
Ze
19
P
seating plane
pin 1 index
S
IL9MPF: plastic single in-line medium power package with fin; 9 leads SOT110
-1
November 1982 13
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth acco un t of sold er ing ICs can be found in
our “IC Package Databook” (order code 93 98 652 90011).
Soldering by dipping or by wave
The maximum permissible temperatur e of the s old er is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seatin g plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced c ooling
may be necess ary immediately aft er soldering to ke ep the
temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating p l ane or not
more than 2 mm ab ov e it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or completing a design.
2. The product s ta tus of device(s ) described in this do cument may have ch anged since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective s pe cification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
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reserves the right to make changes to information
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specifications and prod uct descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publicat ion hereof.
November 1982 14
NXP Semiconductors Product specification
5 W audio power amplifier TDA2611A
Suitability for use NXP Semiconduct ors pr oduc ts are
not designed, au thorized or warranted to be suitable for
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Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions abo ve those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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Quick refer ence data The Quick reference data is an
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Characteristics sections of this document, and as such is
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands RM5/02/pp15 Date of release: November 1982