NT256D64SH8BAGM-5T - Nanya Technology Corporation

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 1

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

200 pin Unbuffered DDR SO-DIMM Based on DDR400/333/266 16Mx16 SDRAM

Features

• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)

• 32Mx64 Unbuffered DDR SO-DIMM based on 16Mx16

DDR SDRAM.

• Performance:

PC3200 PC2700 PC2100

Speed Sort 5/5T 6K 75B

DIMM CAS Latency 2.5/3 2.5 2.5

Unit

fCK Clock Frequency 200 166 133 MHz

tCK Clock Cycle 5 6 7.5 ns

fDQ DQ Burst Frequency 400 333 266 MHz

• Intended for 133, 166 and 200 MHz applications

• Inputs and outputs are SSTL-2 compatible

• VDD = VDDQ = 2.5V ± 0.2V (2.6V ± 0.1V for DDR400A/B)

• SDRAMs have 4 internal banks for concurrent operation

• Module has one physical bank

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

clock edge

• Programmable Operation:

- DIMM CAS Latency: 2, 2.5, 3

- Burst Type: Sequential or Interleave

- Burst Length: 2, 4, 8

- Operation: Burst Read and Write

• Auto Refresh (CBR) and Self Refresh Modes

• Automatic and controlled precharge commands

• 13/9/1 Addressing (row/column/bank)

• 7.8 µs Max. Average Periodic Refresh Interval

• Serial Presence Detect

• Gold contacts

• SDRAMs in 66-pin TSOP Type II Package

Description

NT256D64SH4B0GM and NT256D64SH4BAGM are unbuffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Small Outline Dual

In-Line Memory Module (SO-DIMM), organized as a dual bank 16Mx64 high-speed memory array. The module uses eight 16Mx16 DDR

SDRAMs in 400 mil TSOP II packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference

designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR SDRAM DIMMs provide

a high-performance, flexible 8-byte interface in a 2.66” long space-saving footprint.

The DIMM is intended for use in applications operating up to 200 MHz clock speeds and achieves high-speed data transfer rates of up to

400 MHz. Prior to any access operation, the device CAS latency and burst type/ length/operation type must be programmed into the DIMM

by address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of serial PD

data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

Ordering Information

Part Number Speed Power Organization Leads

NT256D64SH8BAGM-5 DDR400A

PC3200

2.5-3-3

200MHz (5ns @ CL = 3)

166MHz (6ns @ CL = 2.5)

NT256D64SH8BAGM-5T DDR400B

PC3200

3-3-3

200MHz (5ns @ CL = 3)

166MHz (6ns @ CL = 2.5)

32Mx64 2.6V

NT256D64SH8BAGM-6K DDR333

PC2700

3-3-3

166MHz (6ns @ CL = 2.5)

133MHz (7.5ns @ CL = 2)

NT256D64SH8BAGM-75B

NT256D64SH8B0GM-75B

DDR266B

PC2100

2.5-3-3

133MHz (7.5ns @ CL = 2.5)

100MHz (10ns @ CL = 2)

32Mx64 2.5V

Gold

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 2

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Pin Description

CK0, CK1, CK2,

CK0, CK1, CK2 Differential Clock Inputs. DQ0-DQ63 Data input/output

CKE0, CKE1 Clock Enable DQS0-DQS7 Bidirectional data strobes

RAS Row Address Strobe

DM0-DM7 Input Data Mask

CAS Column Address Strobe VDD Power

WE Write Enable VDDQ Supply voltage for DQs

S0, S1 Chip Selects VSS Ground

A0-A9, A11, A12 Address Inputs NC No Connect

A10/AP Address Input/Auto-precharge SCL Serial Presence Detect Clock Input

BA0, BA1 SDRAM Bank Address Inputs SDA Serial Presence Detect Data input/output

VREF Ref. Voltage for SSTL_2 inputs SA0-2 Serial Presence Detect Address Inputs

VDDID V

DD Identification flag. VDDSPD Serial EEPROM positive power supply

Pinout

Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back

1 VREF 2 VREF 51 VSS 52 VSS 101 A9 102 A8 151 DQ42 152 DQ46

3 VSS 4 VSS 53 DQ19 54 DQ23 103 VSS 104 VSS 153 DQ43 154 DQ47

5 DQ0 6 DQ4 55 DQ24 56 DQ28 105 A7 106 A6 155 VDD 156 VDD

7 DQ1 8 DQ5 57 VDD 58 VDD 107 A5 108 A4 157 VDD 158 CK1

9 VDD 10 VDD 59 DQ25 60 DQ29 109 A3 110 A2 159 VSS 160 CK1

11 DQS0 12 DM0 61 DQS3 62 DM3 111 A1 112 A0 161 VSS 162 VSS

13 DQ2 14 DQ6 63 VSS 64 VSS 113 VDD 114 VDD 163 DQ48 164 DQ52

15 VSS 16 VSS 65 DQ26 66 DQ30 115 A10/AP 116 BA1 165 DQ49 166 DQ53

17 DQ3 18 DQ7 67 DQ27 68 DQ31 117 BA0 118 RAS 167 VDD 168 VDD

19 DQ8 20 DQ12 69 VDD 70 VDD 119 WE 120 CAS 169 DQS6 170 DM6

21 VDD 22 VDD 71 NC 72 NC 121 S0 122 S1 171 DQ50 172 DQ54

23 DQ9 24 DQ13 73 NC 74 NC 123 DU 124 DU 173 VSS 174 VSS

25 DQS1 26 DM1 75 VSS 76 VSS 125 VSS 126 VSS 175 DQ51 176 DQ55

27 VSS 28 VSS 77 DQS8 78 NC 127 DQ32 128 DQ36 177 DQ56 178 DQ60

29 DQ10 30 DQ14 79 NC 80 NC 129 DQ33 130 DQ37 179 VDD 180 VDD

31 DQ11 32 DQ15 81 VDD 82 VDD 131 VDD 132 VDD 181 DQ57 182 DQ61

33 VDD 34 VDD 83 NC 84 NC 133 DQS4 134 DM4 183 DQS7 184 DM7

35 CK0 36 VDD 85 DU 86 DU 135 DQ34 136 DQ38 185 VSS 186 VSS

37 CK0 38 VSS 87 VSS 88 VSS 137 VSS 138 VSS 187 DQ58 188 DQ62

39 VSS 40 VSS 89 CK2 90 VSS 139 DQ35 140 DQ39 189 DQ59 190 DQ63

41 DQ16 42 DQ20 91 CK2 92 VDD 141 DQ40 142 DQ44 191 VDD 192 VDD

43 DQ17 44 DQ21 93 VDD 94 VDD 143 VDD 144 VDD 193 SDA 194 SA0

45 VDD 46 VDD 95 CKE1 96 CKE0 145 DQ41 146 DQ45 195 SCL 196 SA1

47 DQS2 48 DM2 97 DU 98 DU 147 DQS5 148 DM5 197 VDDSPD 198 SA2

49 DQ18 50 DQ22 99 A12 100 A11 149 VSS 150 VSS 199 VDDID 200 DU

Note: All pin assignments are consistent for all 8-byte unbuffered versions.

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 3

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Input/Output Functional Description

Symbol Type Polarity Function

CK0, CK1, CK2,

CK0, CK1, CK2 (SSTL) Cross

point

The system clock inputs. All address and command lines are sampled on the cross point of

the rising edge of CK and falling edge of CK. A Delay Locked Loop (DLL) circuit is driven

from the clock inputs and output timing for read operations is synchronized to the input

clock.

CKE0, CKE1 (SSTL) Active

High

Activates the DDR SDRAM CK signal when high and deactivates the CK signal when low.

By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh

mode.

S0, S1 (SSTL) Active

Low

Enables the associated DDR SDRAM command decoder when low and disables the

command decoder when high. When the command decoder is disabled, new commands are

ignored but previous operations continue. Physical Bank 0 is selected by S0; Bank 1 is

selected by S1.

RAS, CAS, WE (SSTL) Active

Low

When sampled at the positive rising edge of the clock, RAS, CAS, WE define the operation to

be executed by the SDRAM.

VREF Supply

Reference voltage for SSTL-2 inputs

VDDQ Supply Isolated power supply for the DDR SDRAM output buffers to provide improved noise

immunity

BA0, BA1 (SSTL) -

Selects which SDRAM bank is to be active.

A0 - A9

A10/AP

A11, A12

(SSTL) -

During a Bank Activate command cycle, A0-A12 defines the row address (RA0-RA12) when

sampled at the rising clock edge.

During a Read or Write command cycle, A0-A9 defines the column address (CA0-CA9)

when sampled at the rising clock edge. In addition to the column address, AP is used to

invoke auto-precharge operation at the end of the Burst Read or Write cycle. If AP is high,

auto-precharge is selected and BA0/BA1 defines the bank to be precharged. If AP is low,

auto-precharge is disabled.

During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control

which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the

state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to pre-charge.

DQ0 - DQ63 (SSTL) -

Data and Check Bit input/output pins operate in the same manner as on conventional

DRAMs.

DQS0 - DQS7 (SSTL) Active

High

Data strobes: Output with read data, input with write data. Edge aligned with read data,

centered on write data. Used to capture write data.

DM0 - DM7 Input Active

High

The data write masks, associated with one data byte. In Write mode, DM operates as a byte

mask by allowing input data to be written if it is low but blocks the write operation if it is high.

In Read mode, DM lines have no effect. DM8 is associated with check bits CB0-CB7, and is

not used on x64 modules.

VDD, VSS Supply

Power and ground for the DDR SDRAM input buffers and core logic

SA0 – SA2 -

Address inputs. Connected to either VDD or VSS on the system board to configure the Serial

Presence Detect EEPROM address.

SDA -

This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor

must be connected from the SDA bus line to V DD to act as a pull-up.

SCL -

This signal is used to clock data into and out of the SPD EEPROM. A resistor may be

connected from the SCL bus time to V DD to act as a pull-up.

VDDSPD Supply

Serial EEPROM positive power supply.

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 4

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Functional Block Diagram

(1 Bank, 16Mx16 DDR SDRAMs)

DM0

DQ0

DQ1

DQ2

DQ7

DQ4

DQ6

DQ5

DQ3

DQ8

DQ9

DQ10

DQ15

DQ12

DQ14

DQ13

DQ11

DQ16

DQ17

DQ18

DQ23

DQ20

DQ22

DQ21

DQ19

DQ24

DQ25

DQ26

DQ31

DQ28

DQ30

DQ29

DQ27

DQS0

DM4

DQS4

DM1

DQS1

DM2

DQS2

DM3

DQS3

DQ32

DQ33

DQ34

DQ39

DQ36

DQ38

DQ37

DQ35

DQ40

DQ41

DQ42

DQ47

DQ44

DQ46

DQ45

DQ43

DQS5

DM5

DQ48

DQ49

DQ50

DQ55

DQ52

DQ54

DQ53

DQ51

DQ56

DQ57

DQ58

DQ63

DQ60

DQ62

DQ61

DQ59

DQS6

DM6

DQS7

DM7

Serial PD

A0 A2A1

SCL

WP SDA

SA0 SA2SA1

DDSPD

SPD

D0-D7

DDQ

REF

DDID

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

I/O 0

I/O 1

I/O 6

I/O 5

I/O 4

I/O 3

I/O 2

I/O 7

LDM

I/O 8

I/O 9

I/O 14

I/O 13

I/O 12

I/O 11

I/O 10

I/O 15

UDM

UDQS

LDQS

Notes :

1. DQ wiring may differ from that described in this drawing.

2. DQ/DQS/DM/CKE/S relationships are maintained as shown.

3. DQ/DQS/DM/DQS resistors are 22+/- 5% Ohms.

4. V

DDID

strap connections (for memory device V

, V

DDQ

STRAP OUT (OPEN): V

= V

DDQ

STRAP IN (V

): V

is not equal to V

DDQ

A0-A12

RAS

BA0-BA1 BA0-BA1 : SDRAMs D0-D7

A0-A12 : SDRAMs D0-D7

RAS : SDRAMs D0-D7

CKE0

CAS CAS : SDRAMs D0-D7

CKE : SDRAMs D0-D3

CKE : SDRAMs D4-D7

WE : SDRAMs D0-D7

CKE1

Clock Wiring

Clock Input SDRAMs

CK0/CK0

CK1/CK1

CK2/CK2

4 SDRAMs

* Clock Net Wiring D0/D4

D1/D5

D2/D6

D3/D7

Card

Edge

CK0/CK1

R=120 Ohms

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 5

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Serial Presence Detect

(Part 1 of 2)

Byte Description SPD Entry Value Serial PD Data Entry

(Hexadecimal)

0 Number of Serial PD Bytes Written during Production 128 80

1 Total Number of Bytes in Serial PD device 256 08

2 Fundamental Memory Type SDRAM DDR 07

3 Number of Row Addresses on Assembly 13 0D

4 Number of Column Addresses on Assembly 9 09

5 Number of DIMM Bank 2 01

6 Data Width of Assembly x64 40

7 Data Width of Assembly (cont’) x64 00

8 Voltage Interface Level of this Assembly SSTL 2.5V 04

DDR266B 7.5ns 75

DDR333 6.0ns 60

DDR400A

DDR SDRAM Device Cycle Time

CL=2.5 (DDR266B/DDR333/400A)

CL=3 (DDR400B) DDR400B 5.0ns 50

DDR266B 0.75ns 75

DDR333 0.70ns 70

DDR400A

DDR SDRAM Device Access Time from Clock

CL=2.5 (DDR266B/DDR333/400A)

CL=3 (DDR400B) DDR400B 0.60ns 60

11 DIMM Configuration Type Non-Parity 00

12 Refresh Rate/Type SR/1x(7.8us) 82

13 Primary DDR SDRAM Width x16 10

14 Error Checking DDR SDRAM Device Width N/A 00

15 DDR SDRAM Device Attr: Min CLK Delay, Random Col Access 1 Clock 01

16 DDR SDRAM Device Attributes: Burst Length Supported 2,4,8 0E

17 DDR SDRAM Device Attributes: Number of Device Banks 4 04

DDR266B 2/2.5 0C

DDR333 2/2.5 0C

DDR400A 2/2.5 0C

18 DDR SDRAM Device Attributes:

CAS Latencies Supported

DDR400B 2.5/3 18

19 DDR SDRAM Device Attributes: CS Latency 0 01

20 DDR SDRAM Device Attributes: WE Latency 1 02

21 DDR SDRAM Device Attributes: Differential Clock 20

DDR266B/333 ±0.2V Tolerance

22 DDR SDRAM Device Attributes: General DDR400A/B ±0.1V Tolerance 00

DDR266B 7.5ns 75

DDR333 10ns A0

DDR400A 5.0ns 50

Minimum Clock Cycle

CL=2.5 (DDR266B/DDR333/400A)

CL=3 (DDR400B) DDR400B 5.0ns 50

DDR266B 0.70ns 70

DDR333 0.75ns 75

DDR400A 0.60ns 60

Maximum Data Access Time from Clock at

CL=2 (DDR266B/DDR333/400A)

CL=2.5 (DDR400B) DDR400B 0.70ns 70

DDR266B N/A 00

DDR333 N/A 00

DDR400A N/A 00

25 Minimum Clock Cycle Time at CL=1

DDR400B 7.5ns 75

DDR266B N/A 00

DDR333 N/A 00

DDR400A N/A 00

26 Maximum Data Access Time from Clock at CL=1

DDR400B 7.5ns 75

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 6

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Serial Presence Detect (Part 2 of 2)

DDR266B 18ns 48

DDR333 20ns 50

DDR400A 15ns 3C

27 Minimum Row Precharge Time (tRP)

DDR400B 15ns 3C

DDR266B 12ns 30

DDR333 15ns 3C

DDR400A 10ns 28

28 Minimum Row Active to Row Active delay (tRRD)

DDR400B 10ns 28

DDR266B 18ns 48

DDR333 20ns 50

DDR400A 15ns 3C

29 Minimum RAS to CAS delay (tRCD)

DDR400B 15ns 3C

DDR266B 42ns 2A

DDR333 45ns 2D

DDR400A 40ns 28

30 Minimum RAS Pulse Width (tRAS)

DDR400B 40ns 28

31 Module Bank Density 128MB 20

DDR266B 0.75ns 75

DDR333 0.90ns 90

DDR400A 0.60ns 60

32 Address and Command Setup Time Before Clock

DDR400B 0.60ns 60

DDR266B 0.75ns 75

DDR333 0.90ns 90

DDR400A 0.60ns 60

33 Address and Command Hold Time After Clock

DDR400B 0.60ns 60

DDR266B 0.45ns 45

DDR333 0.50ns 50

DDR400A 0.40ns 40

34 Data Input Setup Time Before Clock

DDR400B 0.40ns 40

DDR266B 0.45ns 45

DDR333 0.5ns 50

DDR400A 0.40ns 40

35 Data Input Hold Time After Clock

DDR400B 0.40ns 40

36-40 Reserved Reserved 00

41 Minimum Active/Auto-refresh Time (tRC) 60ns 3C

42 Auto-refresh to Active/Auto-refresh Command Period (tRFC) 72ns 48

43 Max Cycle Time (tCK max) 12ns 30

44 Maximum DQS-DQ Skew Time (tDQSQ) 0.4ns 28

45 Maximum Read Data Hold Skew Factor (tQHS) 0.55ns 55

46-61 Reserved Reserved 00

62 SPD Revision Initial 00

DDR266B 3D

DDR333 BE

DDR400A 78

63 Checksum Data

DDR400B 7E

64-71 Manufacturer’s JEDEC ID Code NANYA 7F7F7F0B00000000

72 Module Manufacturing Location N/A 00

73-90 Module Part number N/A 00

91-92 Module Revision Code N/A 00

93-94

Module Manufacturing Data

yy= Binary coded decimal year code, 0-99(Decimal), 00-63(Hex)

ww= Binary coded decimal year code, 01-52(Decimal), 01-34(Hex)

Year/Week Code yy/ww

95-98 Module Serial Number Serial Number 00

99-255 Reserved Reserved 00

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 7

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Absolute Maximum Ratings

Symbol Parameter Rating Units

VIN, VOUT Voltage on I/O pins relative to VSS -0.5 to VDDQ +0.5 V

VIN Voltage on Input relative to VSS -0.5 to +3.6 V

VDD Voltage on VDD supply relative to VSS -0.5 to +3.6 V

VDDQ Voltage on VDDQ supply relative to VSS -0.5 to +3.6 V

TA Operating Temperature (Ambient) 0 to +70 °C

TSTG Storage Temperature (Plastic) -55 to +150 °C

PD Power Dissipation 8 W

IOUT Short Circuit Output Current 50 mA

Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is stress

rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

DC Electrical Characteristics and Operating Conditions

TA = 0 °C ~ 70 °C; VDDQ = VDD = 2.5V ± 0.2V (DDR266B/DDR333); VDDQ = VDD = 2.6V ± 0.1V (DDR400A/B)

Symbol Parameter Min Max Units Notes

DDR266B/333 2.3

VDD Supply Voltage

DDR400A/B 2.5

2.7 V 1

DDR266B/333 2.3

VDDQ I/O Supply Voltage

DDR400A/B 2.5

2.7 V 1

VSS, VSSQ Supply Voltage, I/O Supply Voltage 0 0 V

VREF I/O Reference Voltage 0.49 x VDDQ 0.51 x VDDQ V 1, 2

VTT I/O Termination Voltage (System) VREF – 0.04 VREF + 0.04 V 1, 3

VIH (DC) Input High (Logic1) Voltage VREF + 0.15 VDDQ + 0.3 V 1

VIL (DC) Input Low (Logic0) Voltage -0.3 VREF - 0.15 V 1

VIN (DC) Input Voltage Level, CK and CK Inputs -0.3 VDDQ + 0.3 V 1

VID (DC) Input Differential Voltage, CK and CK Inputs 0.30 VDDQ + 0.6 V 1, 4

Input Leakage Current

Any input 0V ≤ VIN ≤ VDD; (All other pins not under test = 0V)

-5 5 µA 1

IOZ

Output Leakage Current

(DQs are disabled; 0V ≤ Vout ≤ VDDQ

-5 5 µA 1

IOH

Output High Current

(VOUT = VDDQ -0.373V, min VREF, min VTT) -16.8 - mA 1

IOL

Output Low Current

(VOUT = 0.373, max VREF, max VTT) 16.8 - mA 1

1. Inputs are not recognized as valid until VREF stabilizes.

2. VREF is expected to be equal to 0.5 VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak

noise on VREF may not exceed 2% of the DC value.

3. VTT is not applied directly to the DIMM. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF,

and must track variations in the DC level of VREF.

4. VID is the magnitude of the difference between the input level on CK and the input level on CK.

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 8

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

AC Characteristics

Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating

Conditions, Operating, Standby, and Refresh Currents, and Electrical Characteristics and AC Timing.)

1. All voltages referenced to VSS.

2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply voltage levels, but the

related specifications and device operation are guaranteed for the full voltage range specified.

3. Outputs measured with equivalent load. Refer to the AC Output Load Circuit below.

4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to

the crossing point for CK, CK), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions.

The minimum slew rate for the input signals is 1V/ns in the range between VIL (AC) and VIH (AC) unless otherwise specified.

5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver effectively switches as a result of the

signal crossing the AC input level, and remains in that state as long as the signal does not ring back above (below) the DC input LOW

(HIGH) level.

AC Output Load Circuits

Timing Reference Point

50 ohms

30 pF

Output

OUT

AC Operating Conditions

TA = 0 °C ~ 70 °C; VDDQ = VDD = 2.5V ± 0.2V (DDR266B/DDR333); VDDQ = VDD = 2.6V ± 0.1V (DDR400A/B)

Symbol Parameter/Condition Min Max Unit Notes

VIH (AC) Input High (Logic 1) Voltage. VREF + 0.31 V 1, 2

VIL (AC) Input Low (Logic 0) Voltage. VREF - 0.31 V 1, 2

VID (AC) Input Differential Voltage, CK and CK Inputs 0.62 VDDQ + 0.6 V 1, 2, 3

VIX (AC) Input Differential Pair Cross Point Voltage, CK and CK Inputs (0.5* VDDQ) - 0.2 (0.5* VDDQ) + 0.2 V 1, 2, 4

1. Input slew rate = 1V/ ns.

2. Inputs are not recognized as valid until VREF stabilizes.

3. VID is the magnitude of the difference between the input level on CK and the input level on CK.

4. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 9

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Operating, Standby, and Refresh Currents

TA = 0 °C ~ 70 °C; VDDQ = VDD = 2.5V ± 0.2V (DDR266B/DDR333); VDDQ = VDD = 2.6V ± 0.1V (DDR400A/B)

Symbol Parameter/Condition PC3200

(5)

PC2700

(6K)

PC2100

(75B)

Unit Notes

IDD0

Operating Current: one bank; active/precharge; tRC = tRC (MIN); tCK = tCK (MIN);

DQ, DM, and DQS inputs changing twice per clock cycle; address and

control inputs changing once per clock cycle

960 560 500 mA 1,2,4

IDD1

Operating Current: one bank; active/read/precharge; Burst = 2; tRC = tRC (MIN);

CL=2.5; tCK = tCK (MIN); IOUT = 0mA; address and control inputs changing once

per clock cycle

1140 700 620 mA 1,2,4

IDD2P Precharge Power-Down Standby Current: all banks idle; power-down mode;

CKE ≤ VIL (MAX); tCK = tCK (MIN) 128 60 60 mA 1,2,4

IDD2N Idle Standby Current: CS ≥ VIH (MIN); all banks idle; CKE ≥ VIH (MIN); tCK = tCK (MIN);

address and control inputs changing once per clock cycle 340 200 170 mA 1,2,4

IDD3P Active Power-Down Standby Current: one bank active; power-down mode;

CKE ≤ VIL (MAX); tCK = tCK (MIN) 140 130 110 mA 1,2,4

IDD3N

Active Standby Current: one bank; active/precharge; CS ≥ VIH (MIN); CKE ≥ VIH

(MIN); tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per

clock cycle; address and control inputs changing once per clock cycle

560 380 320 mA 1,2,4

IDD4R

Operating Current: one bank; Burst = 2; reads; continuous burst; address

and control inputs changing once per clock cycle; DQ and DQS outputs

changing twice per clock cycle; CL = 2.5; tCK = tCK (MIN); IOUT = 0mA

1800 1400 1280 mA 1,2,4

IDD4W

Operating Current: one bank; Burst = 2; writes; continuous burst; address

and control inputs changing once per clock cycle; DQ and DQS inputs

changing twice per clock cycle; CL=2.5; tCK = tCK (MIN)

1400 820 680 mA 1,2,4

IDD5 Auto-Refresh Current: tRC = tRFC (MIN) 1680 980 800 mA

1,2,3,

IDD6 Self-Refresh Current: CKE ≤ 0.2V 24 24 24 mA 1,2,4

IDD7

Operating Current: four bank; four bank interleaving with BL = 4, address and

control inputs randomly changing; 50% of data changing at every transfer; tRC

= tRC (min); IOUT = 0mA.

2800 1800 1560 mA 1,2,4

1. IDD specifications are tested after the device is properly initialized.

2. Input slew rate = 1V/ ns.

3. Current at 7.8 µs is time averaged value of IDD5 at tRFC (MIN) and IDD2P over 7.8 µs.

4. Preliminary data for PC3200 (5/5T)

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 10

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

AC Timing Specifications for DDR SDRAM Devices Used on Module

TA = 0 °C ~ 70 °C; VDDQ = VDD = 2.5V ± 0.2V (DDR266B/DDR333); VDDQ = VDD = 2.6V ± 0.1V (DDR400A/B) (Part 1 of 2)

5/5T 6K 75B Unit Notes

Symbol Parameter

Min. Max. Min. Max. Min. Max.

tAC DQ output access time from CK/CK -0.6 +0.6 -0.7 +0.7 -0.75 +0.75 ns 1-4

tDQSCK DQS output access time from CK/CK -0.5 +0.5 -0.7 +0.7 -0.75 +0.75 ns 1-4

tCH CK high-level width 0.45 0.55 0.45 0.55 0.45 0.55 tCK 1-4

tCL CK low-level width 0.45 0.55 0.45 0.55 0.45 0.55 tCK 1-4

CL=3 --/5 8 ns 1-4

CL=2.5 5/6 12 6 12 7.5 12 ns 1-4

tCK Clock cycle time

CL=2 7.5/-- 12/-- 7.5 12 10 12 ns 1-4

tDH DQ and DM input hold time 0.4 0.45 0.5 ns 1-4,

15, 16

tDS DQ and DM input setup time 0.4 0.45 0.5 ns 1-4,

15, 16

tDIPW DQ and DM input pulse width (each input) 1.75 1.75 1.75 ns 1-4

tHZ Data-out high-impedance time from CK/CK -0.6 +0.6 -0.7 +0.7 -0.75 +0.75 ns 1-4, 5

tLZ Data-out low-impedance time from CK/CK -0.6 +0.6 -0.7 +0.7 -0.75 +0.75 ns 1-4, 5

tDQSQ DQS-DQ skew (DQS & associated DQ signals) 0.4 0.45 0.5 ns 1-4

tHP Minimum half clk period for any given cycle; defined

by clk high (tCH) or clk low (tCL) time

tCH or

tCL tCH or

tCL t

CK 1-4

tQH Data output hold time from DQS tHP -

tQHS tHP -

tQHS t

CK 1-4

tQHS Data hold Skew Factor 0.5 0.55 0.75 ns 1-4

tDQSS Write command to 1st DQS latching transition 0.72 1.28 0.75 1.25 0.75 1.25 tCK 1-4

tDQSL,

tDQSH

DQS input low (high) pulse width

(write cycle) 0.35 0.35 0.35 tCK 1-4

tDSS DQS falling edge to CK setup time

(write cycle) 0.2 0.2 0.2 tCK 1-4

tDSH DQS falling edge hold time from CK

(write cycle) 0.2 0.2 0.2 tCK 1-4

tMRD Mode register set command cycle time 2 2 2 tCK 1-4

tWPRES Write preamble setup time 0 0 0 ns 1-4, 7

tWPST Write postamble 0.40 0.60 0.40 0.60 0.40 0.60 tCK 1-4, 6

tWPRE Write preamble 0.25 0.25 0.25 tCK 1-4

tIH Address and control input hold time

(fast slew rate) 0.6 0.75 0.9 ns

2-4, 9,

11, 12

tIS Address and control input setup time

(fast slew rate) 0.6 0.75 0.9 ns

2-4, 9,

11, 12

tIH Address and control input hold time

(slow slew rate) 0.7 0.8 1.0 ns

2-4,

10, 11,

12, 14

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 11

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

AC Timing Specifications for DDR SDRAM Devices Used on Module

TA = 0 °C ~ 70 °C; VDDQ = VDD = 2.5V ± 0.2V (DDR266B/DDR333); VDDQ = VDD = 2.6V ± 0.1V (DDR400A/B) (Part 2 of 2)

5/5T 6K 75B Unit Notes

Symbol Parameter

Min. Max. Min. Max. Min. Max.

tIS

Address and control input setup time

(slow slew rate)

0.7 0.8 1.0 ns

2-4,

10-12,

tIPW Input pulse width 2.2 2.2 2.2 ns

2-4, 12

tRP RE Read preamble 0.9 1.1 0.9 1.1 0.9 1.1 tCK 1-4

tRP ST Read postamble 0.40 0.60 0.40 0.60 0.40 0.60 tCK 1-4

tRAS Active to Precharge command 42ns 120us 42ns 120us 45ns 120us 1-4

tRC Active to Active/Auto-refresh command period 55 60 65 ns 1-4

tRFC Auto-refresh to Active/Auto-refresh command period 70 72 75 ns 1-4

tRCD Active to Read or Write delay 15 18 20 ns 1-4

tRAP Active to Read Command with Auto-precharge 15 18 20 ns 1-4

tRP Precharge command period 15 18 20 ns

1-4

tRRD Active bank A to Active bank B command 10 12 15 ns 1-4

tWR Write recovery time 15 15 15 ns

1-4

tDAL Auto-precharge write recovery + precharge time

(tWR/

tCK ) +

(tRP /

tCK )

(tWR/

tCK ) +

(tRP /

tCK )

(tWR/

tCK ) +

(tRP /

tCK )

CK 1-4, 13

tWTR Internal write to read command delay 2 1 1 tCK 1-4

tPDEX Power down exit time 5 6 7.5 ns 1-4

tXSNR Exit self-refresh to non-read command 75 75 75 ns 1-4

tXSRD Exit self-refresh to read command 200 200 200 tCK 1-4

tREFI Average Periodic Refresh Interval 7.8 7.8 7.8 µs 1-4, 8

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 12

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

AC Timing Specification Notes

1. Input slew rate = 1V/ns.

2. The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals

other than CK/CK is VREF.

3. Inputs are not recognized as valid until VREF stabilizes.

4. The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (Note 3) is VTT.

5. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific

voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).

6. The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system

performance (bus turnaround) degrades accordingly.

7. The specific requirement is that DQS be valid (high, low, or some point on a valid transition) on or before this CK edge. A valid transition

is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the

bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from

high to low at this time, depending on tDQSS.

8. A maximum of eight Auto refresh commands can be posted to any given DDR SDRAM device.

9. For command/address input slew rate >= 1.0 V/ns. Slew rate is measured between VOH (AC) and VOL (AC).

10. For command/address input slew rate >= 0.5 V/ns and < 1.0 V/ns. Slew rate is measured between VOH (AC) and VOL (AC).

11. CK/CK slew rates are >= 1.0 V/ns.

12. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed by design

or tester characterization.

13. For each of the terms in parentheses, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock

cycle time. For example, for PC2100 at CL= 2.5, tDAL = (15ns/7.5ns) +(20ns/7.0ns) = 2 + 3 = 5.

14. An input setup and hold time derating table is used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns.

Input Slew Rate Delta (tIS) Delta (tIH) Unit Note

0.5 V/ns 0 0 ps 1, 2

0.4 V/ns +50 0 ps 1, 2

0.3 V/ns +100 0 ps 1, 2

1. Input slew rate is based on the lesser of the slew rates determined by either VIH (AC) to VIL (AC) or VIH (DC) to VIL (DC), similarly for rising

transitions.

2. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.

15. An input setup and hold time derating table is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns.

Input Slew Rate Delta (tDS) Delta (tDH) Unit Note

0.5 V/ns 0 0 ps 1, 2

0.4 V/ns +75 +75 ps 1, 2

0.3 V/ns +150 +150 ps 1, 2

1. I/O slew rate is based on the lesser of the slew rates determined by either VIH (AC) to VIL (AC) or VIH (DC) to VIL (DC), similarly for rising

transitions.

2. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.

16. An I/O Delta Rise, Fall Derating table is used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ.

Delta Rise and Fall Rate Delta (tDS) Delta (tDH) Unit Note

0.0 ns/V 0 0 ps 1-4

0.25 ns/V +50 +50 ps 1-4

0.5 ns/V +100 +100 ps 1-4

1. Input slew rate is based on the lesser of the slew rates determined by either VIH (AC) to VIL (AC) or VIH (DC) to VIL (DC), similarly for rising

transitions.

2. Input slew rate is based on the larger of AC to AC delta rise, fall rate and DC to DC delta rise, fall rate.

3. The delta rise, fall rate is calculated as: [1/(slew rate 1)] - [1/(slew rate 2)]

For example: slew rate 1 = 0.5 V/ns; slew rate 2 = 0.4 V/ns. Delta rise, fall = (1/0.5) - (1/0.4) [ns/V] = -0.5 ns/V

Using the table above, this would result in an increase in tDS and tDH of 100 ps.

4. These derating parameters may be guaranteed by design or tester characterization and are not necessarily tested on each device.

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 13

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Package Dimensions

67.60

63.60

4.00+/-0.10

1.00+/- 0.1

FRONT

SIDE

1.00+/- 0.10

Detail A

2.55

0.60

Detail B

0.45

0.25 MAX

19913941

Detail A Detail B

4.00

20.00

31.75

6.00

2.15 11.40

4.20

1.80

47.40

3.80 MAX

(2X)

1.80

2.45

24042 200

BACK

Note: All dimensions are typical with tolerances of +/- 0.15 unless otherwise stated.

Units: Millimeters (Inches)

NT256D64SH8B0GM / NT256D64SH8BAGM

256MB : 32M x 64

PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM

REV 1.1 14

12/19/2003

Preliminary

NANYA reserves the right to change products and specifications without notice.

Revision Log

Rev Date Modification

0.1 Dec, 2003

Preliminary Release

Specification to cover 256MB DDR1 SODIMM speeds of 5/5T/6K/75B

1.0 Dec 11, 2003 Official Release

1.1 Dec 19, 2003 Update to tables

Nanya Technology Corporation

Hwa Ya Technology Park 669

Fu Hsing 3rd Rd., Kueishan,

Taoyuan, 333, Taiwan, R.O.C.

Tel: +886-3-328-1688

Please visit our home page for more information: www.nanya.com

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