35PD10M
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 35PD10M is the largest standard InGaAs detector available on the market today. Both circular (10mm
diameter) and square (10mm edge length) formats are offered. Applications include high sensitivity
instrumentation and test equipment. Standard packaging includes a hermetic TO-3 and a ceramic flat pack.
Reliability is achieved through planar semiconductor design, and dielectric-passivation. Chips can also be
attached and wire bonded to customer-supplied or other specified packages.
Ultra-Large Area InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Dark Current
Capacitance
Responsivity
Responsivity
Rise/Fall
Dynamic Impedance
Spectral Range
µA
nF
A/W
A/W
µs
K Ohms
nm
20
3
0.9
1
1
> 60
850 - 1650
–1V
–1V
1300nm
1500nm
Est. 50ohm load
0V
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
1 Volt
200mA
30mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS
